HiPerFETTM Power MOSFETs N-Channel Enhancement Mod.
VBsemi
STF150N10F7 - N-Channel MOSFET
STF150N10F7-VB STF150N10F7-VB Datasheet N-Channel 100 V (D-S) 175 °C MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V ID (A) .
STMicroelectronics
STF150N10F7 - N-CHANNEL POWER MOSFET
STF150N10F7 N-channel 100 V, 0.0036 Ω typ., 65 A, STripFET™ F7 Power MOSFET in a TO-220FP package Datasheet − production data Features 3 2 1 TO-220.
STMicroelectronics
STP150N10F7 - N-CHANNEL POWER MOSFET
STI150N10F7, STP150N10F7 N-channel 100 V, 0.0036 Ω typ., 110 A, STripFET™ F7 Power MOSFETs in I2PAK and TO-220 packages Datasheet − production data T.
Cystech Electonics
MTB150N10N3 - N-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp. 100V N-Channel Enhancement Mode MOSFET MTB150N10N3 Spec. No. : C731N3 Issued Date : 2016.12.12 Revised Date : Page No. : 1/.
IPS
FTE150N10N-1 - N-Channel MOSFET
N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS Features: ● RoHS Compliant ● Low ON Resistance ● Low Gate Charge ● Peak Current vs Pulse Wid.
ST Microelectronics
STE150N10 - N-CHANNEL ENHANCEMENT MODE Power MOS Transistor
www.DataSheet4U.com www.DataSheet4U.com .
IPS
FTD150N10N - N-Channel MOSFET
N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS Features: ● RoHS Compliant ● Low ON Resistance ● Low Gate Charge ● Peak Current vs Pulse Wi.
Fairchild Semiconductor
FDI150N10 - N-Channel PowerTrench MOSFET
FDI150N10 — N-Channel PowerTrench® MOSFET FDI150N10 N-Channel PowerTrench® MOSFET 100 V, 57 A, 16 mΩ November 2013 Features • RDS(on) = 12 mΩ (Typ..
SemiHow
HRLF150N10K - N-Channel MOSFET
HRLF150N10K Jan 2016 HRLF150N10K 100V N-Channel Trench MOSFET FEATURES BVDSS = 100 V ID = 50 A Unrivalled Gate Charge : 80 nC (Typ.) Lower R.
SCILICON
SFP150N100A - N-MOSFET
Features 100V/170A RDS(ON)= 5mΩ (Max)@ VGS=10V Lead free and Green Device Available Low Rds-on to Minimize Conductive Loss High avalanche Curr.
SCILICON
SFB150N100A - N-MOSFET
Features 100V/170A RDS(ON)= 5mΩ (Max)@ VGS=10V Lead free and Green Device Available Low Rds-on to Minimize Conductive Loss High avalanche Curr.
IXYS
150N10 - Power MOSFETs
HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFK100N10 IXFN150N10 V I DSS D25 100 V 100 A 100 V 15.
SEMIPOWER
SW150N10A - MOSFET
SAMWIN SW150N10A N-channel TO-220 MOSFET Features TO-220 ■ High ruggedness ■ RDS(ON) (Max 5.6m Ω)@VGS=10V ■ Gate Charge (Typ 160nC) ■ Improved dv.
Infineon
BSZ150N10LS3G - Power-Transistor
OptiMOSTM3 Power-Transistor Features • Ideal for high frequency switching • Optimized technology for DC/DC converters • Excellent gate charge x R DS(o.
IXYS Corporation
IXFN150N10 - Power MOSFET
HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS IXFK100N10 IXFN150N10 ID25 RDS(on) 12 mW 12 mW 100 V.
SemiHow
HRLP150N10K - N-Channel Trench MOSFET
HRLP150N10K HRLP150N10K 100V N-Channel Trench MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching C.
ST Microelectronics
STE150N100 - N-CHANNEL ENHANCEMENT MODE Power MOS Transistor
www.DataSheet4U.com www.DataSheet4U.com .
IXYS Corporation
150N10 - IXFN150N10
www.DataSheet4U.comTM HiPerFET Power MOSFETs VDSS IXFK100N10 IXFN150N10 ID25 RDS(on) 12 mW 12 mW N-Channel Enhancement Mode Avalanche Rated, High .
Fairchild Semiconductor
FDB150N10 - N-Channel MOSFET
FDB150N10 — N-Channel PowerTrench® MOSFET FDB150N10 N-Channel PowerTrench® MOSFET 100 V, 57 A, 15 mΩ December 2013 Features • RDS(on) = 12 mΩ (Typ..
Fairchild Semiconductor
FDP150N10 - N-Channel MOSFET
FDP150N10 N-Channel PowerTrench® MOSFET March 2013 FDP150N10 N-Channel PowerTrench® MOSFET 100 V, 57 A, 15 mΩ Features • RDS(on) = 12 mΩ ( Typ.) @ .