150N10 Datasheet | Specifications & PDF Download

STI150N10F7, STP150N10F7 N-channel 100 V, 0.0036 Ω typ., 110 A, STripFET™ F7 Power MOSFETs in I2PAK and TO-220 packages Datasheet − production data T

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isc N-Channel MOSFET Transistor FDP150N10 ·FEATURES ·With TO-220 packaging ·Drain Source Voltage- : VDSS ≥ 100V ·Static drain-source on-resistance:

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HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFK100N10 IXFN150N10 V I DSS D25 100 V 100 A 100 V 15

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www.DataSheet4U.comTM HiPerFET Power MOSFETs VDSS IXFK100N10 IXFN150N10 ID25 RDS(on) 12 mW 12 mW N-Channel Enhancement Mode Avalanche Rated, High

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N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS Features: ● RoHS Compliant ● Low ON Resistance ● Low Gate Charge ● Peak Current vs Pulse Wid

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N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS Features: ● RoHS Compliant ● Low ON Resistance ● Low Gate Charge ● Peak Current vs Pulse Wi

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Features  100V/170A RDS(ON)= 5mΩ (Max)@ VGS=10V  Lead free and Green Device Available  Low Rds-on to Minimize Conductive Loss  High avalanche Curr

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STP150N10F7AG Datasheet Automotive N-channel 100 V, 3.6 mΩ typ., 110 A, STripFET F7 Power MOSFET in a TO-220 package Features TAB Order code VDS

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STF150N10F7-VB STF150N10F7-VB Datasheet N-Channel 100 V (D-S) 175 °C MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V ID (A)

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CYStech Electronics Corp. 100V N-Channel Enhancement Mode MOSFET MTB150N10N3 Spec. No. : C731N3 Issued Date : 2016.12.12 Revised Date : Page No. : 1/

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STF150N10F7 N-channel 100 V, 0.0036 Ω typ., 65 A, STripFET™ F7 Power MOSFET in a TO-220FP package Datasheet − production data Features 3 2 1 TO-220

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-262(I2PAK) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·E

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FDP150N10 N-Channel PowerTrench® MOSFET March 2013 FDP150N10 N-Channel PowerTrench® MOSFET 100 V, 57 A, 15 mΩ Features • RDS(on) = 12 mΩ ( Typ.) @

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FDP150N10A — N-Channel PowerTrench® MOSFET FDP150N10A N-Channel PowerTrench® MOSFET 100 V, 50 A, 15 mΩ November 2013 Features • RDS(on) = 12.5 mΩ (

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CYStech Electronics Corp. Spec. No. : C868J3 Issued Date : 2016.06.06 Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTB150N

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to

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OptiMOSTM3 Power-Transistor Features • Ideal for high frequency switching • Optimized technology for DC/DC converters • Excellent gate charge x R DS(o

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HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS IXFK100N10 IXFN150N10 ID25 RDS(on) 12 mW 12 mW 100 V

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