16-channel Datasheet | Specifications & PDF Download

FDB0165N807L N-Channel PowerTrench® MOSFET December 2015 FDB0165N807L N-Channel PowerTrench® MOSFET 80 V, 310 A, 1.6 mΩ Features General Descripti

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Description BP1638CJ is a 3-channel PWM dimmable Linear constant current LED driver, integrated with three 40V/200mA MOS. PWM signal can control the r

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FNK30H160 FNK N-Channel Enhancement Mode Power MOSFET Description The FNK30H160 uses advanced trench technology and design to provide excellent RDS(O

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SHEN ZHEN FINE MAD ELECTRONICS GROUP CO., LTD. FM6124 (：S&CIC1501) 16 LED FM6124 LED IC， 16 。FM6124 “ ”，，。FM6124 ， 。 FM6124 ， PCB 。 ， LED 。

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2SK1618(L), 2SK1618(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Lo

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2SK2216 Silicon N-Channel MOS FET ADE-208-346A 2nd. Edition Application UHF power amplifier Features • High power output, high gain, high efficienc

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AUDIO MULTI-CHANNEL RECEIVER SX-316 ENTER MULTI JOG ADVANCED ST/DIRECT/ STANDARD SURR AUTO SURR LISTENING MODE STANDBY/ON PHONES DVD/LD TV/SAT

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2SK1622(L), 2SK1622(S) Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low dri

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4AM16 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance N Channel: RDS(on) ≤ 0.17

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SI-TECH SEMICONDUCTOR CO.,LTD Features  VDS=100V,ID=155A Rds(on)(typ)=5m@Vgs=10V  100% Avalanche Tested  100% Rg Tested  Lead-Free (RoHS Complian

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MITSUBISHI Nch POWER MOSFET FS30KMJ-2 HIGH-SPEED SWITCHING USE FS30KMJ-2 OUTLINE DRAWING 10 ± 0.3 6.5 ± 0.3 3 ± 0.3 Dimensions in mm 2.8 ± 0.2 1

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STP160N3LL N-channel 30 V, 2.5 mΩ typ., 120 A STripFET™ H6 Power MOSFET in a TO-220 package Datasheet - production data Figure 1: Internal schematic

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STL160NS3LLH7 N-channel 30 V, 0.0016 Ω typ., 160 A STripFET™ H7 Power MOSFET plus monolithic Schottky in a PowerFLAT™ 5x6 Datasheet - production data

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SMD Type N-Channel Trench Power MOSFET EMB16N06G MOSFET Ƶ Features ƽ VDS (V) = 60V ƽ ID = 20 A (VGS = ±20V) ƽ RDS(ON) ˘ 15m¡ (VGS =10V) SOP-8 1.5

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AOT16N50/AOTF16N50 500V, 16A N-Channel MOSFET General Description Product Summary The AOT16N50 & AOTF16N50 have been fabricated using an advanced h

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P1615ATFA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 150V 16.5mΩ @VGS = 10V 42A TO-220F ABSOLUTE MAXIMUM RATINGS (

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NEW PRODUCT D5V0M5B6LP16 5 CHANNEL HIGH SURGE BIDIRECTIONAL TVS DIODE Product Summary VBR min 5.5V Ipp max 12A Cin typ 35pF Description This new

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ADVANCED INFORMATION Product Summary VBR (min) 28V IPP (max) 50A IR (max) 100nA Description This new generation TVS is designed to protect sensit

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2SJ160, 2SJ161, 2SJ162 Silicon P-Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SK1056, 2SK1057 and 2SK1058 Feat

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3SK166A GaAs N-channel Dual Gate MES FET For the availability of this product, please contact the sales office. Description The 3SK166A is an N-channe

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