165-Channel Datasheet | Specifications & PDF Download

STP165N10F4 N-channel 100 V, 4.4 mΩ, 120 A TO-220 STripFET™ DeepGATE™ Power MOSFET Features Order code STP165N10F4 VDSS 100 V RDS(on) max ID < 5

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MDD1654 – Single N-Channel Trench MOSFET 30V MDD1654 30V N-channel Trench MOSFET : 30V, 55A, 6.0mΩ General Description The MDD1654 uses advanced Mag

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FCP165N65S3 MOSFET – Power, N-Channel, SUPERFET III, Easy-Drive 650 V, 19 A, 165 mW Description SUPERFET III MOSFET is ON Semiconductor’s brand−new hi

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FCH165N65S3R0 MOSFET – Power, N-Channel, SUPERFET III, Easy Drive 650 V, 19 A, 165 mW Description SUPERFET III MOSFET is ON Semiconductor’s brand-new

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2SK1165, 2SK1166 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low driv

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SM6165NHF N-Channel Enhancement Mode MOSFET Features • 60V/69A RDS(ON)=8.6mΩ(max.)@VGS=10V RDS(ON)=12mΩ(max.)@VGS=4.5V • 100% UIS + Rg Tested • Reli

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MOSFET – N-Channel, SUPERFET) II, Easy-Drive 600 V, 23 A, 165 mW FCH165N60E Description SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltag

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STL165N10F8AG Datasheet Automotive N‑channel 100 V, 3.2 mΩ max., 158 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package Features Order code VDS

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MDD1653 – Single N-Channel Trench MOSFET 30V MDD1653 30V N-channel Trench MOSFET : 30V, 50A, 8.5mΩ General Description The MDD1653 uses advanced Mag

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FCP165N60E — N-Channel SuperFET® II Easy-Drive MOSFET FCP165N60E N-Channel SuperFET® II Easy-Drive MOSFET 600 V, 23 A, 165 mΩ December 2015 Feature

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isc N-Channel MOSFET Transistor IPP60R165CP，IIPP60R165CP ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.165Ω ·Enhancement mode ·Fast Switc

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MOSFET – Power, N-Channel, SUPERFET III, Easy Drive 650 V, 19 A, 165 mW FCPF165N65S3R0L Description SUPERFET III MOSFET is ON Semiconductor’s brand−ne

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IS43/46LQ16512A, IS43/46LQ16512AL ® Long-term Support World Class Quality 8 Gb (x16 x 1 channel ) Mobile LPDDR4/LPDDR4X FEATURES • Configuration: -

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VBMB165R22 N-Channel 650 V (D-S) Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C () Qg max. (nC) Qgs (nC) Qgd (nC

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Product Summary BVDSS -30V RDS(ON) 95mΩ @ VGS = -10V 140mΩ @ VGS = -4.5V ID TA = +25°C -2.7A -2.2A DMP3165SVTQ DUAL P-CHANNEL ENHANCEMENT MODE MOS

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P-Channel Enhancement Mode Power MOSFET Description The PE7165G uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It c

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS 2SK1658 N-channel MOSFET V(BR)DSS 30 V RDS(on)MAX 10Ω@4V 15

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=13A@ TC=25℃ ·Drain Source Voltage- : VDSS=500 (Min) ·Minimum Lot-to-Lot variations for

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