16N60 Datasheet | Specifications & PDF Download

SEMICONDUCTOR 16N60 Series RoHS RoHS Nell High Power Products N-Channel Power MOSFET (16A, 600Volts) DESCRIPTION The Nell 16N60 is a three-termin

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IXZR16N60 & IXZR16N60A/B Z-MOS RF Power MOSFET N-ChaNnCnehlaEnnheal EncnehmanecnetmMeondteMSowdietch Mode RF MOSFET Low CLaopwacQitgaanncde RZg-MOSTM

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FCP16N60 / FCPF16N60 — N-Channel SuperFET® MOSFET August 2014 FCP16N60 / FCPF16N60 N-Channel SuperFET® MOSFET 600 V, 16 A, 260 mΩ Features • 650V @

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FCP16N60 / FCPF16N60 600V N-Channel MOSFET December 2008 FCP16N60 / FCPF16N60 600V N-Channel MOSFET Features • 650V @TJ = 150°C • Typ. Rds(on) = 0.2

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PD - 94631A SMPS MOSFET IRFB16N60L HEXFET® Power MOSFET Applications • Zero Voltage Switching SMPS VDSS RDS(on) typ. Trr typ. ID • Telecom and Serv

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STP16N60M2, STU16N60M2 N-channel 600 V, 0.28 Ω typ., 12 A MDmesh™ M2 Power MOSFET in TO-220 and IPAK packages Datasheet - production data TAB 3 TA

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STP16N60M2, STU16N60M2 N-channel 600 V, 0.28 Ω typ., 12 A MDmesh™ M2 Power MOSFET in TO-220 and IPAK packages Datasheet - production data TAB 3 TA

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isc N-Channel MOSFET Transistor FCPF16N60NT ·FEATURES ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate d

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FCA16N60N N-Channel MOSFET August 2009 TM SupreMOS FCA16N60N N-Channel MOSFET 600V, 16A, 0.170Ω Features • RDS(on) = 0.17Ω ( Typ.)@ VGS = 10V, ID =

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UNISONIC TECHNOLOGIES CO., LTD 16N60-ML 16A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 16N60-ML is a high voltage power MOSFET combines advanc

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WML16N60C2, WMK16N60C2, WMM16N60C2 WMN16N60C2, WMP16N60C2, WMO16N60C2 600V 0.27Ω Super Junction Power MOSFET Description WMOSTM C2 is Wayon’s 2nd gen

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FCP16N60N / FCPF16N60NT — N-Channel SupreMOS® MOSFET FCP16N60N / FCPF16N60NT N-Channel SupreMOS® MOSFET 600 V, 16 A, 199 mΩ November 2013 Features

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FCP16N60N / FCPF16N60NT — N-Channel SupreMOS® MOSFET FCP16N60N / FCPF16N60NT N-Channel SupreMOS® MOSFET 600 V, 16 A, 199 mΩ November 2013 Features

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isc N-Channel MOSFET Transistor FCP16N60N ·FEATURES ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate dri

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HiPerFASTTM IGBTs C2-Class High Speed w/ Diode IXGA16N60C2D1 IXGP16N60C2D1 IXGH16N60C2D1 VCES = IC110 = VCE(sat) ≤ tfi(typ) = 600V 16A 3.0V 33ns T

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HiPerFASTTM IGBTs C2-Class High Speed w/ Diode IXGA16N60C2D1 IXGP16N60C2D1 IXGH16N60C2D1 VCES = IC110 = VCE(sat) ≤ tfi(typ) = 600V 16A 3.0V 33ns T

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TSF16N60MR TSF16N60MR 600V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technolog

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HiPerFASTTM IGBTs B2-Class High Speed w/ Diode IXGA16N60B2D1 IXGP16N60B2D1 IXGH16N60B2D1 VCES = IC110 = VCE(sat) ≤ tfi(typ) = 600V 16A 1.95V 70ns

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IXZR16N60 & IXZR16N60A/B Z-MOS RF Power MOSFET N-ChaNnCnehlaEnnheal EncnehmanecnetmMeondteMSowdietch Mode RF MOSFET Low CLaopwacQitgaanncde RZg-MOSTM

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP16N60

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