1N0 Datasheet | Specifications & PDF Download

FTP11N08A N-Channel MOSFET Applications: • Automotive • DC Motor Control • Class D Amplifier Features: • RoHS Compliant • Low ON Resistance • Low Gat

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 2.1mΩ ID 100A G UIS, Rg 100% Tested

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() CRST041N08N, CRSS038N08N SkyMOS1 N-MOSFET 85V, 3.4mΩ, 120A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS(

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FTP11N08 N-Channel MOSFET Applications: • Automotive • DC Motor Control • Class D Amplifier • RoHS Compliant • Low ON Resistance • Low Gate Charge • P

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N-Channel Trench Power MOSFET General Description The FNK01N08 is N-channel MOS Field Effect Transistor designed for high current switching applicatio

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Gleichmann & Co. Electronics GmbH Product Marketing Displays & Systems Schraderstr. 44, D- 67227 Frankenthal Tel : +49 7249-910-0, Fax: +49 7249-910-5

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isc N-Channel MOSFET Transistor IPD031N03L, IIPD031N03L ·FEATURES ·Static drain-source on-resistance: RDS(on)≤3.1mΩ ·Enhancement mode: ·100% avalanch

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Ie\Q %&$ #™3 Power-Transistor Features Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3 B53 Q( @D9=9J54 D53 8>? F5BD5BC Q

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ISC031N08NM6 MOSFET OptiMOSTM 6 Power-Transistor, 80 V Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 20V D RDSON (MAX.) 11.5mΩ ID 8A G S Pb‐Free Lead Plati

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www.DataSheet4U.com IPB091N06N G IPP091N06N G OptiMOS® Power-Transistor Features • Low gate charge for fast switching applications • N-channel enha

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Public IPP011N03LF2S Final datasheet MOSFET StrongIRFET™2 Power‑Transistor, 30 V Features • Optimized for a wide range of applications • N‑channel,

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Silicon N-Channel Power MOSFET ○R CS21N03 AQ2-1 General Description： CS21N03 AQ2-1, the silicon N-channel Enhanced VDMOSFETs, is obtained by the

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() CRST033N08N,CRSS031N08N SkyMOS1 N-MOSFET 85V, 2.5mΩ, 160A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS(o

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() CRSM021N03L6 SkyMOS6 N-MOSFET 30V, 1.7mΩ, 80A Features • Uses CRM(CQ) advanced SkyMOS6 technology • Extremely low on-resistance RDS(on) • Excelle

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Features  N-Channel，5V Logic Level Control  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  100% Avalanche test  Pb-free lead plating; R

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FDB031N08 — N-Channel PowerTrench® MOSFET FDB031N08 N-Channel PowerTrench® MOSFET 75 V, 235 A, 3.1 mΩ November 2013 Features • RDS(on) = 2.4 mΩ (Ty

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MULTILAYER CERAMIC CHIP CAPACITORS Upgrade Surface Mount Device ?FEATURES 1. Large capacitance by small size. 2. Excellent noise absorption. 3. High

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MULTILAYER CERAMIC CHIP CAPACITORS / RCoomHplSian2t Temperature cycle : 1000 cycles FEATURES 1. Large capacitance by small size. 2. Excellent noise

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