1N0 Datasheet | Pinout, Features, Price Comparison & PDF

FTP11N08A N-Channel MOSFET Applications: • Automotive • DC Motor Control • Class D Amplifier Features: • RoHS Compliant • Low ON Resistance • Low Gat

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() CRST041N08N, CRSS038N08N SkyMOS1 N-MOSFET 85V, 3.4mΩ, 120A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS(

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 2.1mΩ ID 100A G UIS, Rg 100% Tested

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FTP11N08 N-Channel MOSFET Applications: • Automotive • DC Motor Control • Class D Amplifier • RoHS Compliant • Low ON Resistance • Low Gate Charge • P

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XTR1N0800 High Temperature 80V Diode Family Data Sheet Rev 3 – August 2021 (DS-00131-11) PRODUCTION XTRPPPPP YYWWANN DIP8 XTR1N0815 XTR1N0850 FEA

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XTR1N0400 High Temperature 40V Diode Family Rev 4 – November 2023 (DS-00172-12) Data Sheet PRODUCTION XTRPPPPP YYWWANN DIP8 XTR1N0415 XTR1N0450 XTR

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HYG011N04LS1TA Feature  40V/320A RDS(ON)=0.9 mΩ(typ.)@VGS = 10V RDS(ON)=1.3 mΩ(typ.)@VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Halog

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MOSFET - Power, Single N-Channel 40 V, 1.1 mW, 277 A NVMTS1D1N04C Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize C

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R1191x SERIES 300mA LDO REGULATOR with the Reverse Current Protection NO.EA-229-220315 OUTLINE R1191x Series are a low supply current voltage regulato

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MULTILAYER CERAMIC CHIP CAPACITORS Upgrade Surface Mount Device ?FEATURES 1. Large capacitance by small size. 2. Excellent noise absorption. 3. High

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Ie\Q %&$ #™3 Power-Transistor Features Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3 B53 Q( @D9=9J54 D53 8>? F5BD5BC Q

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MOSFET – Power, Single N-Channel 40 V, 11 mW, 37 A NVLJWS011N04CL Features • Small Footprint for Compact Design • Low RDS(on) to Minimize Conduction

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ISC031N08NM6 MOSFET OptiMOSTM 6 Power-Transistor, 80 V Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x

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XP231N0201TR-G N-channel MOSFET 30V, 0.2A ■FEATURES On-State Resistance Driving voltage Environmentally Friendly : RDS(on)＝5.0Ω @VGS =4.5V : 2.5V :

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XP231N02017R-G N-channel MOSFET 30V, 0.2A ETR11064-001 ■FEATURES On-State Resistance : RDS(on)＝5Ω@VGS =4.5V Driving voltage : 2.5V Environmenta

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XP231N02015R-G N-channel MOSFET 30V, 0.2A ETR11060-001 ■FEATURES On-State Resistance : RDS(on)＝5Ω@VGS =4.5V Driving voltage : 2.5V Environmenta

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XP231N02013R-G N-channel MOSFET 30V, 0.2A ETR11053-001a ■FEATURES On-State Resistance Driving voltage Environmentally Friendly : RDS(on)=5Ω@VGS =4.

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