1N0 Datasheet | Specifications & PDF Download

FTP11N08A N-Channel MOSFET Applications: • Automotive • DC Motor Control • Class D Amplifier Features: • RoHS Compliant • Low ON Resistance • Low Gat

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isc N-Channel MOSFET Transistor IPD031N06L3, IIPD031N06L3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤3.1mΩ ·Enhancement mode: ·100% avala

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() CRST041N08N, CRSS038N08N SkyMOS1 N-MOSFET 85V, 3.4mΩ, 120A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS(

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MULTILAYER CERAMIC CHIP CAPACITORS / RCoomHplSian2t Temperature cycle : 1000 cycles FEATURES 1. Large capacitance by small size. 2. Excellent noise

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 2.1mΩ ID 100A G UIS, Rg 100% Tested

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ZXM61N02F 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=20V; RDS(ON)=0.18⍀; ID=1.7A DESCRIPTION This new generation of high density MOSFETs

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FTP11N08 N-Channel MOSFET Applications: • Automotive • DC Motor Control • Class D Amplifier • RoHS Compliant • Low ON Resistance • Low Gate Charge • P

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MULTILAYER CERAMIC CHIP CAPACITORS / RCoomHplSian2t Temperature cycle : 1000 cycles FEATURES 1. Large capacitance by small size. 2. Excellent noise

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MULTILAYER CERAMIC CHIP CAPACITORS / RCoomHplSian2t Temperature cycle : 1000 cycles FEATURES 1. Large capacitance by small size. 2. Excellent noise

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MULTILAYER CERAMIC CHIP CAPACITORS / RCoomHplSian2t Temperature cycle : 1000 cycles FEATURES 1. Large capacitance by small size. 2. Excellent noise

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MULTILAYER CERAMIC CHIP CAPACITORS / RCoomHplSian2t Temperature cycle : 1000 cycles FEATURES 1. Large capacitance by small size. 2. Excellent noise

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Semiconductor RFL1N08, RFL1N10 1A, 80V and 100V, 1.200 Ohm, N-Channel, Power MOSFETs Description These are N-channel enhancement mode silicon-gate po

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-251(IPAK) packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot v

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Ie\Q %&$ #™3 Power-Transistor Features Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3 B53 Q( @D9=9J54 D53 8>? F5BD5BC Q

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 20V D RDSON (MAX.) 11.5mΩ ID 8A G S Pb‐Free Lead Plati

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MOSFET – Power, N-Channel 80 V, 1.0 mW NVCW4LS001N08HA Features • Typical RDS(on) = 0.82 mW at VGS = 10 V • Typical Qg(tot) = 166 nC at VGS = 10 V •

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MOSFET – Power, Single N-Channel, SO8FL 40 V, 3.1 mW, 83 A NTMFS3D1N04XM Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Mi

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Public ISC031N08NM6SC Final datasheet MOSFET OptiMOS™ 6 Power‑Transistor, 80 V Features • Dual‑side cooled package with lowest Junction‑top thermal

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