1N0 Datasheet | Specifications & PDF Download

FTP11N08A N-Channel MOSFET Applications: • Automotive • DC Motor Control • Class D Amplifier Features: • RoHS Compliant • Low ON Resistance • Low Gat

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 2.1mΩ ID 100A G UIS, Rg 100% Tested

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() CRST041N08N, CRSS038N08N SkyMOS1 N-MOSFET 85V, 3.4mΩ, 120A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS(

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FTP11N08 N-Channel MOSFET Applications: • Automotive • DC Motor Control • Class D Amplifier • RoHS Compliant • Low ON Resistance • Low Gate Charge • P

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MOSFET – Power, Single N-Channel, STD Gate, SO8FL 80 V, 1.9 mW, 201 A NTMFS2D1N08X Features • Low QRR, Soft Recovery Body Diode • Low RDS(on) to Mini

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DE150-501N04A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching VDSS ID25 = 500 V = 4.5 A Symbol VDSS VDGR

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Philips Semiconductors Product specification N-channel TrenchMOS™ transistor Logic level FET FEATURES • ’Trench’ technology • Low on-state resistanc

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Philips Semiconductors Product specification N-channel TrenchMOS™ transistor Logic level FET FEATURES • ’Trench’ technology • Low on-state resistanc

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MULTILAYER CERAMIC CHIP CAPACITORS / RCoomHplSian2t Temperature cycle : 1000 cycles FEATURES 1. Large capacitance by small size. 2. Excellent noise

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Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET FEATURES • ’Trench’ technology • Very low on-state resistance • F

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Silicon N-Channel Power MOSFET HGQ011N04A-G General Description： HGQ011N04A-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high den

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RP111x Series Good Transient Response Low Voltage 500mA LDO NO.EA-241-150204 OUTLINE The RP111x Series are CMOS-based LDO regulators featuring 500m

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MOSFET – Power, N-Channel 80 V, 1.0 mW NVCW4LS001N08HA Features • Typical RDS(on) = 0.82 mW at VGS = 10 V • Typical Qg(tot) = 166 nC at VGS = 10 V •

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() CRST033N08N,CRSS031N08N SkyMOS1 N-MOSFET 85V, 2.5mΩ, 160A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS(o

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Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level

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ISC011N03L5S MOSFET OptiMOSTM Power-MOSFET, 30 V Features • Optimized for high performance Buck converter • Very low on-resistance RDS(on) @ VGS=4.5

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Type #$% &™3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1

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MOSFET – Power, Single N-Channel 60 V, 0.81 mW, 398.2 A NVMTS001N06CL Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimi

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MOSFET – Power, Single N-Channel 40 V, 12 mW, 35 A NVMYS011N04C Features  Small Footprint (5x6 mm) for Compact Design  Low RDS(on) to Minimize Cond

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