Toshiba
| TC58NVG1S3HTAI0 |
2-GBIT (256M x 8 BIT) CMOS NAND E2PROM |
Sanken
| SSC1S311 |
Switching Regulator |
|
Toshiba
| TC58NVG1S3HTA00 |
2 GBIT (256M x 8 BIT) CMOS NAND E2PROM |
|
Sanken
| SSC1S312A |
Quasi-Resonant Off-Line Switching Controller |
|
Sanken
| SSC1S311A |
Quasi-Resonant Off-Line Switching Controller |
Samsung Semiconductor
| K1S3216B1C |
2Mx16 bit Uni-Transistor Random Access Memory |
|
Toshiba
| TC58BVG1S3HTA00 |
2 GBIT (256M x 8 BIT) CMOS NAND E2PROM |
onsemi
| RB521S30 |
Schottky Barrier Diode |
Sharp Corporation
| GP1S37 |
Subminiature Photointerrupter |
|
Toshiba
| TC58NVG1S3EBAI4 |
2 GBIT (256M x 8-BIT) CMOS NAND E2PROM |
|
Samsung Semiconductor
| K1S321615M |
2Mx16 bit Uni-Transistor Random Access Memory |
|
Toshiba
| TC58NVG1S3ETA00 |
2 GBIT (256M x 8 BIT) CMOS NAND E2PROM |
STMicroelectronics
| ST1S32 |
4A DC step-down switching regulator |
Harris Corporation
| HGT1S3N60C3D |
UFS Series N-Channel IGBT |
Kemet Electronics
| T491S335 |
(T491 Series) Tantalum Chip Capacitors |
Intersil (now Renesas)
| HUF76121S3S |
N-Channel MOSFET |
|
Toshiba
| TC58BYG1S3HBAI6 |
2 GBIT (256M x 8-BIT) CMOS NAND E2PROM |
Fuji Electric
| YG911S3 |
LOW LOSS SUPER HIGH SPEED DIODE |
Samsung Semiconductor
| K1S321611C |
2Mx16 bit Uni-Transistor Random Access Memory |
NXP Semiconductors
| RB521S30 |
Schottky barrier rectifier |
