1S3 Datasheet | Specifications & PDF Download

A FEATURES · · · · High Linearity (IIP3 + 18 dBm) Low Noise Figure ( 2.0 dB ) Single Supply (+8Vdc) Wide Bandwidth ( 50MHz - 1 GHz) Linear Amplifier

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Slotted Optical Switch OPB820S, OPB821Z, OPB821S_Z Features: • Non-contact switching • Four standard aperture sizes for high resolution • Low profile

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GP1S33 GP1S33 s Features 1. Ultra-compact package 2. PWB mounting type 3. High sensing accuracy ( Slit width : 0.3mm ) 4. Applying to reflow solderin

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Resistors SIL Resistor Network L Series Thick Film Low Profile SIP Conformal Coated Resistor Networks RoHS Compliant Electrical Standard Res

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Resistors SIL Resistor Network L Series Thick Film Low Profile SIP Conformal Coated Resistor Networks RoHS Compliant Electrical Standard Res

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Resistors SIL Resistor Network L Series Thick Film Low Profile SIP Conformal Coated Resistor Networks RoHS Compliant Electrical Standard Res

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Quasi-Resonant Off-Line Switching Control ICs SSC1S310A Series Data Sheet Description SSC1S310A series is the controller ICs of a quasiresonant mode

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HGT1S3N60A4DS, HGTP3N60A4D Data Sheet January 2000 File Number 4818 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT1S3N60

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GP1S37 GP1S37 s Features 1. Ultra-compact 2. PWB mounting type package Subminiature Photointerrupter s Outline Dimensions ( Unit : mm ) Internal

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RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION 1S20 THRU 1S60 SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 60 Volts CURRENT 1.0 Ampere FEATURES *

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HUF76121P3, HUF76121S3S Data Sheet September 1999 File Number 4392.8 47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Chann

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RB521S30T1G, NSVRB521S30T1G, RB521S30T5G Schottky Barrier Diode These Schottky barrier diodes are designed for high−speed switching applications, cir

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ST0541S3 1-Line Low Capacitance Bi-directional TVS Diode Description Mechanical Characteristics The ST0541S3 is a 5V bi-directional TVS diode, util

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TC58NVG1S3HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 GBIT (256M  8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58NVG1S3HBAI6 is a

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® ESDA6V1S3 ESDA6V2S6 TRANSIL™ ARRAY FOR ESD PROTECTION Application Specific Discretes A.S.D.™ APPLICATIONS Where transient overvoltage protection i

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S E M I C O N D U C T O R RFP30N06LE, RF1S30N06LE, RF1S30N06LESM 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power M

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S E M I C O N D U C T O R RFP30N06LE, RF1S30N06LE, RF1S30N06LESM 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power M

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RFG30P06, RFP30P06, RF1S30P06SM Data Sheet July 1999 File Number 2437.3 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs These are P-Channel power MOSFET

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RB521S30T1 Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage cl

Rating: 1 ★ (3 votes)