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No Part Number Description Manufacture PDF
449 1SS101 SUPER HIGH SPEED SWITCHING DIODE

XIN SEMICONDUCTOR ISO9002 1SS101 THUR 1SS301 SUPER HIGH SPEED SWITCHING DIODE SPECIAL DESIGN FOR PROTECTING SOLAR BATTERY FEATURES For general purpose applications These diodes features very low tur
XIN SEMICONDUCTOR
XIN SEMICONDUCTOR
1SS101 pdf
448 1SS101 Mixer Diode

NEC
NEC
1SS101 pdf
447 1SS104 SILICON PLANAR TYPE DIODE

Toshiba Semiconductor
Toshiba Semiconductor
1SS104 pdf
446 1SS106 Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching

1SS106 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching ADE-208-153A (Z) Rev. 1 Oct. 1998 Features • Detection efficiency is very good. • Small temperature coefficient.
Hitachi Semiconductor
Hitachi Semiconductor
1SS106 pdf
445 1SS106 SILICON SCHOTTKY BARRIER DIODE

1SS106 SILICON SCHOTTKY BARRIER DIODE for various detector, high speed switching Features • Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal
SEMTECH
SEMTECH
1SS106 pdf
444 1SS106 Silicon Schottky Barrier Diode

1SS106 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching REJ03G0125-0200Z (Previous: ADE-208-153A) Rev.2.00 Oct.23.2003 Features • Detection efficiency is very good. • Smal
Renesas
Renesas
1SS106 pdf
443 1SS106 SMALL SIGNAL SCHOTTKY DIODES

R SEMICONDUCTOR 1SS106 SMALL SIGNAL SCHOTTKY DIODES FEATURES Detection effciency is very good Small temperature coefficient High reliability with glass seal For use in RECORDER, TV, RADIO, TELEPHON
JINAN JINGHENG ELECTRONICS
JINAN JINGHENG ELECTRONICS
1SS106 pdf
442 1SS108 Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching

1SS108 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching ADE-208-154A (Z) Rev. 1 Features • Detection efficiency is very good. • Small temperature coefficient. • High re
Hitachi Semiconductor
Hitachi Semiconductor
1SS108 pdf
441 1SS110 Silicon Epitaxial Planar Diode for Tuner Band Switch

1SS110 Silicon Epitaxial Planar Diode for Tuner Band Switch ADE-208-179B (Z) Rev. 2 Features • Low forward resistance. (r f = 0.9 Ω max) • Suitable for 5mm pitch high speed automatical insertio
Hitachi Semiconductor
Hitachi Semiconductor
1SS110 pdf
440 1SS110 Switching Diode

Switching Diode *150mW DO-34 * Glass silicon switching diodes * We declare that the material of product compliance with RoHS requirements. 1SS110 Product Characteristic Absolute
Leshan Radio Company
Leshan Radio Company
1SS110 pdf
439 1SS118 Silicon Epitaxial Planar Diode

1SS118 Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-297 (Z) Rev. 0 Features • High average forward current. (I O = 200mA) • High reliability with glass sea
Hitachi Semiconductor
Hitachi Semiconductor
1SS118 pdf
438 1SS119 Silicon Epitaxial Planar Diode for High Speed Switching

1SS119 Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-180A (Z) Rev. 1 Aug. 1995 Features • Low capacitance. (C = 3.0pF max) • Short reverse recovery time. (trr = 3.5ns max) • S
Hitachi Semiconductor
Hitachi Semiconductor
1SS119 pdf


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