1SS Datasheet | Pinout, Features, Price Comparison & PDF

BL SMALL SIGNAL SWITCHING DIODES FEATURES Silicon epitaxial planar diode High speed switching diode These diodes are also available in glass case DO-3

1SS141 - 1SS147 AXIAL LEADED FAST SWITCHING DIODE Features Silicon epitaxial planar diode High speed switching diode These diodes are also avai

1SS141 - 1SS147 AXIAL LEADED FAST SWITCHING DIODE Features Silicon epitaxial planar diode High speed switching diode These diodes are also avai

BL SMALL SIGNAL SWITCHING DIODES FEATURES Silicon epitaxial planar diode High speed switching diode These diodes are also available in glass case DO-3

1SS141 - 1SS147 AXIAL LEADED FAST SWITCHING DIODE Features Silicon epitaxial planar diode High speed switching diode These diodes are also avai

www.eicsemi.com 1SS106 FEATURES : • High reliability with glass seal • Small temperature coefficient. • Pb / RoHS Free MECHANICAL DATA : Case: DO-35 G

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Features Low forward voltage High breakdown voltage Low diode capacitance. Mechanical Data Case: DO-35, glass case Polarity: Color band deno

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS348 Low Voltage High Speed Switching 1SS348 Unit: mm z Low forward voltage z Low reverse cu

Features High switching speed: max. 4 ns Continuous reverse voltage:max. 30 V Repetitive peak reverse voltage:max. 35 V Mechanical Data Case:

1SS165 SCHOTTKY BARRIER DIODES Features Low forward voltage High breakdown voltage Low diode capacitance. Mechanical Data Case: DO-35, glass

BL SMALL SIGNAL SWITCHING DIODES FEATURES Silicon epitaxial planar diode High speed switching diode These diodes are also available in glass case DO-3

BL SMALL SIGNAL SWITCHING DIODES FEATURES Silicon epitaxial planar diode High speed switching diode These diodes are also available in glass case DO-3

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS315 UHF Band Mixer Applications 1SS315 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Chara

1SS270A Silicon Epitaxial Planar Diode for High Speed Switching REJ03G0567-0400 Rev.4.00 Sep 29, 2008 Features • Low capacitance. (C = 3.0 pF max) • S

Features High switching speed: max. 4 ns Continuous reverse voltage:max. 50 V Repetitive peak reverse voltage:max. 55 V Mechanical Data Case:

1SS141 - 1SS147 AXIAL LEADED FAST SWITCHING DIODE Features Silicon epitaxial planar diode High speed switching diode These diodes are also avai

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS193 Ultra High Speed Switching Application  AEC-Q101 Qualified (Note1)  Small package : SC-59 

1SS198 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching ADE-208-298A (Z) Rev. 1 Oct. 1998 Features • Detection efficiency is

www.DataSheet4U.com 1SS131 FEATURES : • High switching speed: max. 4 ns • Continuous reverse voltage:max. 80 V • Repetitive peak reverse voltage:max.