1SS Datasheet | Specifications & PDF Download

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NotNeRewcDoemsimgennsded for 1SS356 Band Switching Diodes 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 ●Outline VR 35 V Ct 1.2 pF rF 0.9 Ω 　 ●F

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1SS270A FEATURES : • High switching speed: max. 3.5 ns • Continuous reverse voltage:max. 60 V • Peak reverse voltage:max. 70 V • Pb / RoHS Free MECHAN

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TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type 1SS293 Low Voltage High Speed Switching Low forward voltage Low reverse surrent Small package

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1SS133 Diodes Switching diode 1SS133 Applications High speed switching External dimensions (Units : mm) CATHODE BAND (YELLOW) φ0.4±0.1 Features 1

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TOSHIBA Diode Silicon Epitaxial Planar Type 1SS184 Ultra High Speed Switching Application  AEC-Q101 Qualified (Note1)  Small package: SC-59  Low fo

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® WON-TOP ELECTRONICS 1SS190 SURFACE MOUNT FAST SWITCHING DIODE Pb Features  High Conductance  Fast Switching  Surface Mount Package Ideally Suit

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XIN SEMICONDUCTOR ISO9002 1SS101 THUR 1SS301 SUPER HIGH SPEED SWITCHING DIODE SPECIAL DESIGN FOR PROTECTING SOLAR BATTERY FEATURES For general purpo

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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS419 High-Speed Switching Applications 1SS419 Unit: mm CATHODE MARK • Small package • Low f

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1SS270A Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-166A (Z) Rev. 1 Aug.1995 Features • Low capacitance. (C = 3.0pF max) • Short

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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS391 Low Voltage High Speed Switching  Low forward voltage: VF (2) = 0.23V (typ.)  Small pac

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1SS83 Silicon Epitaxial Planar Diode for High Voltage Switching ADE-208-150A (Z) Rev. 1 Jul. 1995 Features • High reverse voltage. (VR = 250V) • High

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® WON-TOP ELECTRONICS 1SS226 SURFACE MOUNT FAST SWITCHING DIODE Pb Features  Dual Diode Series  Fast Switching  Surface Mount Package Ideally Sui

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Hall-IC MH1SS1

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Silicon Epitaxial Planar Diode FEATURES z Small package z Low forward voltage z Fast reverse recovery time z Small total capacitance Pb Lead-free P

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www.DataSheet4U.com 1SS130 FEATURES : • High switching speed: max. 4 ns • Continuous reverse voltage:max. 75 V • Repetitive peak reverse voltage:max.

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1SS133 Silicon Epitaxial Planar Switching Diode Features • Glass sealed envelope • High speed • High reliability Applications • High-speed switching A

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