| No |
Part Number |
Description |
Manufacture |
PDF |
| 456 |
1SS101 |
SUPER HIGH SPEED SWITCHING DIODE
XIN SEMICONDUCTOR
ISO9002
1SS101 THUR 1SS301
SUPER HIGH SPEED SWITCHING DIODE SPECIAL DESIGN FOR PROTECTING SOLAR BATTERY
FEATURES
For general purpose applications These diodes features very low tur |
XIN SEMICONDUCTOR
|
|
| 455 |
1SS101 |
Mixer Diode
|
NEC
|
|
| 454 |
1SS104 |
SILICON PLANAR TYPE DIODE
|
Toshiba Semiconductor
|
|
| 453 |
1SS106 |
Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching
1SS106
Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
ADE-208-153A (Z) Rev. 1 Oct. 1998 Features
• Detection efficiency is very good. • Small temperature coefficient. |
Hitachi Semiconductor
|
|
| 452 |
1SS106 |
SILICON SCHOTTKY BARRIER DIODE
1SS106
SILICON SCHOTTKY BARRIER DIODE
for various detector, high speed switching
Features • Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal |
SEMTECH
|
|
| 451 |
1SS106 |
Silicon Schottky Barrier Diode
1SS106
Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
REJ03G0125-0200Z (Previous: ADE-208-153A)
Rev.2.00 Oct.23.2003
Features
• Detection efficiency is very good. • Smal |
Renesas
|
|
| 450 |
1SS106 |
SMALL SIGNAL SCHOTTKY DIODES
R SEMICONDUCTOR
1SS106
SMALL SIGNAL SCHOTTKY DIODES
FEATURES
Detection effciency is very good Small temperature coefficient High reliability with glass seal For use in RECORDER, TV, RADIO, TELEPHON |
JINAN JINGHENG ELECTRONICS
|
|
| 449 |
1SS108 |
Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching
1SS108
Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
ADE-208-154A (Z) Rev. 1 Features
• Detection efficiency is very good. • Small temperature coefficient. • High re |
Hitachi Semiconductor
|
|
| 448 |
1SS110 |
Silicon Epitaxial Planar Diode for Tuner Band Switch
1SS110
Silicon Epitaxial Planar Diode for Tuner Band Switch
ADE-208-179B (Z) Rev. 2 Features
• Low forward resistance. (r f = 0.9 Ω max) • Suitable for 5mm pitch high speed automatical insertio |
Hitachi Semiconductor
|
|
| 447 |
1SS110 |
Switching Diode
Switching Diode
*150mW DO-34 * Glass silicon switching diodes * We declare that the material of product compliance with RoHS requirements.
1SS110
Product Characteristic Absolute |
Leshan Radio Company
|
|
| 446 |
1SS118 |
Silicon Epitaxial Planar Diode
1SS118
Silicon Epitaxial Planar Diode for High Speed Switching
ADE-208-297 (Z) Rev. 0 Features
• High average forward current. (I O = 200mA) • High reliability with glass sea |
Hitachi Semiconductor
|
|
| 445 |
1SS119 |
Silicon Epitaxial Planar Diode for High Speed Switching
1SS119
Silicon Epitaxial Planar Diode for High Speed Switching
ADE-208-180A (Z) Rev. 1 Aug. 1995 Features
• Low capacitance. (C = 3.0pF max) • Short reverse recovery time. (trr = 3.5ns max) • S |
Hitachi Semiconductor
|
|
