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OSEN
A09T - 30V N-CHANNEL MOSFET
A09T http://www.osen.net.cn 30V N-CHANNEL MOSFET Features： Fast switching speed High input impedance and low level drive Improved dv/dt c.
Silan
40N60NPFD - 600V FIELD STOP IGBT
SGT40N60NPFDPN_Datasheet 40A, 600V FIELD STOP IGBT DESCRIPTION SGT40N60NPFDPN using Field Stop IGBT technology, offer the optimum performance for indu.
ETC
30J127 - 600V 200A IGBT MOSFET
MOSFET 600V 200A IGBT Número de parte: GT30J127 Descripción: IGBT PARA APLICACIONES DE PANTALLAS DE TELEVISION DE PLASMA TO-220 Voltaje: 600V Corrient.
Alpha & Omega Semiconductors
AOE6930 - 30V Dual Asymmetric N-Channel FET
AOE6930 30V Dual Asymmetric N-Channel XSPairFET TM General Description • Bottom Source Technology • Very Low RDS(ON) • Low Gate Charge • High Current.
Silan Microelectronics
60N60FD1 - 600V FIELD-STOP IGBT
Silan Microelectronics SGT60N60FD1PN/P7/PS/PT_Datasheet 60A, 600V FIELD STOP IGBT DESCRIPTION SGT60N60FD1PN/P7/PS/PT adopts Field Stop IGBT technolog.
Alpha & Omega Semiconductors
AON7408 - 30V N-Channel MOSFET
AON7408 30V N-Channel MOSFET General Description • The AON7408 uses advanced trench technology and design to provide excellent RDS(ON) with low gate .
Alpha & Omega Semiconductors
AOD4184A - 40V N-Channel MOSFET
AOD4184A 40V N-Channel MOSFET General Description The AOD4184A combines advanced trench MOSFET technology with a low resistance package to provide ex.
Alpha & Omega Semiconductors
AON7410 - 30V N-Channel MOSFET
AON7410 30V N-Channel MOSFET General Description The AON7410 uses advanced trench technology and design to provide excellent RDS(ON) with low gate ch.
Alpha & Omega Semiconductors
AON6414A - 30V N-Channel MOSFET
AON6414A 30V N-Channel MOSFET General Description Product Summary The AON6414A uses advanced trench technology to provide excellent RDS(ON), low ga.
Alpha & Omega Semiconductors
AO4468 - 30V N-Channel MOSFET
AO4468 30V N-Channel MOSFET General Description Product Summary The AO4468 combines advanced trench MOSFET technology with a low resistance package.
Fairchild Semiconductor
FGD4536 - 360V PDP IGBT
FGD4536 — 360 V PDP Trench IGBT FGD4536 360 V PDP Trench IGBT Features • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.59 V @ IC = 5.
ROUM
20N60 - 20A 600V N-channel Enhancement Mode Power MOSFET
20N60/F20N60/20N60D 20A 600V N-channel Enhancement Mode Power MOSFET 1 Description These silicon N-channel Enhanced VDMOSFETs are obtained by the sel.
Silan Microelectronics
SVS5N70D - 700V DP MOS POWER TRANSISTOR
SVS5N70D/MJ/MN/F/MU_Datasheet 5A, 700V DP MOS POWER TRANSISTOR DESCRIPTION SVS5N70D/MJ/MN/F/MU is an N-channel enhancement mode high voltage power MO.
Alpha & Omega Semiconductors
AON7506 - 30V N-Channel MOSFET
AON7506 30V N-Channel AlphaMOS General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Char.
Fairchild Semiconductor
2N60B - 600V N-Channel MOSFET
www.DataSheet4U.com SSW2N60B / SSI2N60B November 2001 SSW2N60B / SSI2N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mo.
Fortior
FD2103 - 180V Half-Bridge Gate Driver
FD2103 FD2103 FD2103 ， 、 N MOSFET， +180V 。 FD2103 （UVLO）， ，。 FD2103 ， ，。 180V +180V +1.0A/-1.0A 3.3V/5V VCC（UVLO） 100ns DC.
Alpha & Omega Semiconductors
AO3400 - 30V N-Channel MOSFET
AO3400 30V N-Channel MOSFET General Description Product Summary The AO3400 combines advanced trench MOSFET technology with a low resistance package.
HUAXUANYANG
9435A - -30V P-Channel Enhancement Mode MOSFET
SHENZHEN HUAXUANYANG ELECTRONICS CO.,LTD 9435A -30V P-Channel Enhancement Mode MOSFET General Description: The 9435A is the single P-Channel logic .
Alpha & Omega Semiconductors
AON6426 - 30V N-Channel MOSFET
AON6426 30V N-Channel MOSFET General Description The AON6426 combines advanced trench MOSFET technology with a low resistance package to provide extr.
STMicroelectronics
25P10VP - M25P10
M25P10 1 Mbit Low Voltage Paged Flash Memory With 20 MHz Serial SPI Bus Interface PRELIMINARY DATA s 1 Mbit PAGED Flash Memory s 128 BYTE PAGE PROGRA.
