2.19W Datasheet | Specifications & PDF Download

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DC COMPONENTS CO., LTD. R RECTIFIER SPECIALISTS 1N5817WS THRU 1N5819WS TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SCHOTTKY BARRIER DIODES VOLTAGE RA

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1N5817W THRU 1N5819W Surface  Mount Schottky Barrier Rectifier Reverse  Voltage - 20 to 40 V Forward Current - 1 A         PINNING PIN 1 2 1 DESCRIP

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SMD Type Schottky Diodes 1N5817W ~ 1N5819W TransDisiotodress Ƶ Features ƽ Low power loss, high efficiency ƽ High current capability ƽ Low forward v

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Technical Data Data Sheet N1756, Rev. - 1N5817W-1N5819W SCHOTTKY BARRIER DIODE Features: • Metal silicon junction, majority carrier conduction • Guard

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MCC 5 Micro Commercial Components
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AiT Components Inc. www.ait-components.com B5817W~B5819W SCHOTTKY DIODES SCHOTTKY BARRIER DIODE DESCRIPTION The B5817W~B5819W are available in SOD-1

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Features * Reverse voltage - 20 to 40 V * Forward current - 1 A 1N5817W THRU 1N5819W Surface Mount Schottky Barrier Rectifiers A C B DE G F SOD-12

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20V P-Channel MOSFETs General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This adva

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Production specification Schottky Barrier Diode FEATURES  Extremely low VF .  Low stored change,majority carrier conduction  Low power loss/high e

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SURFACE MOUNT SCHOTTKY BARRIER DIODE B5817W thru B5819W REVERSE VOLTAGE – 20 to 40 Volts FORWARD CURRENT – 1 Ampere FEATURES • For use in low voltag

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