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21 inch Datasheet

21 inch

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INCHANGE

TT2190 - NPN Transistor

 · 10 Hits =0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 0.9A VBE(sat) Base-Emitter Saturation Voltage IC= 4.5A; IB= 0.9A IEBO Emitter Cuto...
Inchange Semiconductor

2SD2110 - Power Transistor

 · 9 Hits SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; ...
INCHANGE

TT2170LS - NPN Transistor

 · 8 Hits r-Emitter Saturation Voltage IC= 2.7A; IB= 0.54A VBE(sat) Base-Emitter Saturation Voltage IC= 2.7A; IB= 0.54A IEBO Emitter Cutoff Current ICES C...
Inchange Semiconductor

21N60 - N-Channel MOSFET

 · 7 Hits ·Drain Current ID= 21A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.32Ω(Max) ·Fast Switching ·AP...
Inchange Semiconductor

2SK2117 - N-Channel MOSFET Transistor

 · 6 Hits rent Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance tr Rise Time td(on) Turn-on Delay Time tf Fall Time td(...
Inchange Semiconductor

2SK1021 - N-Channel MOSFET Transistor

 · 6 Hits S(th) Gate Threshold Voltage VDS= VGS; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=1.5A IGSS Gate Source Leakage Current VGS= ±30...
Samsung

SFD-321B - 3.5inch DUAL DENSITY MICRO FLOPPY DISK DRIVE

 · 6 Hits ce Options 9.2 Other Options (Buyer Selection) 10. GENERAL COMMENT ※ LIST of FIGURES Figure 2-1. Figure 2-2. Figure 3-1. Figure 4-1. Figure 4-2. Fig...
INCHANGE

BU921T - NPN Transistor

 · 6 Hits ONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 400 V VCE(sat)-1 Collector-Emitter Saturation Voltage ...
INCHANGE

BU921P - NPN Transistor

 · 6 Hits TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 400 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 50...
INCHANGE

2SA2120 - PNP Transistor

 · 6 Hits oltage IC= -50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -8A; IB= -800mA VBE(on) Base-Emitter On Voltage IC= -7A ; VCE= -5V ICBO...
INCHANGE

2SD213 - NPN Transistor

 · 6 Hits US) Collector-Emitter Sustaining Voltage IC= 10mA ; IB= 0 MIN MAX UNIT 80 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(sa...
Sanyo Semicon Device

ALP121AXX - Low-Temperature Polysilicon 1.5-inch TFT LCD Module

 · 5 Hits • Diagonal 3.8cm (1.5inch) display size. • 521 × 218 = 113,578 dots. • RGB delta color arrangement. • Operating temperature (panel) is -10 to +60°C. A...
Inchange Semiconductor

2SD2112 - Power Transistor

 · 5 Hits ied SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1...
Inchange Semiconductor

2SD2113 - Power Transistor

 · 5 Hits ified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 0...
Inchange Semiconductor

D2110 - 2SD2110

 · 5 Hits herwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ; RBE= ∞ 80 V V(BR)CBO C...
INCHANGE

BTA216-600B - Triac

 · 5 Hits ·With TO-263 insulated package ·Suitables for general purpose AC switching. Which can be used as an ON/OFF function in applications such as static rel...
INCHANGE

MJL21193 - PNP Transistor

 · 5 Hits X UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 -250 V VCE(sat) Collector-Emitter Saturation Voltage IC= -8.0A; IB= -0.8A -1...
INCHANGE

IRFP21N60L - N-Channel MOSFET

 · 5 Hits ·Low drain-source on-resistance: RDS(ON) =0.32Ω (MAX) ·Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot...
INCHANGE

2SC4421 - Silicon NPN Power Transistor

 · 4 Hits unless otherwise specified SYMBOL PARAMETER INCHANGE Semiconductor 2SC4421 CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Vol...
Inchange Semiconductor

IRF121 - N-Channel MOSFET Transistor

 · 4 Hits osfet Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=250µA VGS(TH...
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