2150, 2155 & 2160 Vishay Micro-Measurements 2100 .
ISSI
IS43LR32160C - 4M x 32Bits x 4Banks Mobile DDR SDRAM
IS43/46LR32160C 4M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32160C is 536,870,912 bits CMOS Mobile Double Data Rate Synchronous D.
ISSI
IS43LR32160B - 4M x 32Bits x 4Banks Mobile DDR SDRAM
IS43LR32160B, IS46LR32160B 4M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32160B is 536,870,912 bits CMOS Mobile Double Data Rate Sy.
Infineon
HYB25DC512160CF - 512-Mbit Double-Data-Rate SDRAM
www.DataSheet4U.com D a t a S h e e t , Rev. 1.10, O c t . 2 0 0 5 HYB25DC512800C[E/F] HYB25DC512160C[E/F] 512-Mbit Double-Data-Rate SDRAM DDR SDRAM.
ISSI
IS46LR32160C - 4M x 32Bits x 4Banks Mobile DDR SDRAM
IS43/46LR32160C 4M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32160C is 536,870,912 bits CMOS Mobile Double Data Rate Synchronous D.
Rohm
SCT2160KE - N-channel SiC power MOSFET
SCT2160KE N-channel SiC power MOSFET Datasheet VDSS RDS(on) (Typ.) ID PD 1200V 160m 22A 165W Features 1) Low on-resistance 2) Fast switching spe.
LAPIS
MD56V82160A-10TA - SYNCHRONOUS DYNAMIC RAM
MD56V82160A-xxTA 4-Bank×4,194,304 -Word×16-Bit SYNCHRONOUS DYNAMIC RAM FEDD56V82160ATA-02 Issue Date : Nov. 29, 2013 DESCRIPTION The MD56V82160A-xxT.
LAPIS
MD56V82160A-6TA - SYNCHRONOUS DYNAMIC RAM
MD56V82160A-xxTA 4-Bank×4,194,304 -Word×16-Bit SYNCHRONOUS DYNAMIC RAM FEDD56V82160ATA-02 Issue Date : Nov. 29, 2013 DESCRIPTION The MD56V82160A-xxT.
OKI
MD56V82160 - SYNCHRONOUS DYNAMIC RAM
OKI Semiconductor MD56V82160 4-Bank 4,194,304-Word 16-Bit SYNCHRONOUS DYNAMIC RAM FEDD56V82160-01 Issue Date:Feb.14, 2008 DESCRIPTION The MD56V8.
Pericom Semiconductor Corporation
PI3B32160 - 3.3V/ Low Capacitance 16-Bit to 32-Bit/ DeMux NanoSwitch with Precharged Outputs
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ISSI
IS42VM32160E - 4M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42/45SM/RM/VM32160E 4M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM32160E are mobile 536,870,912 bits CMOS Synchronou.
ISSI
IS46LR32160B - 4M x 32Bits x 4Banks Mobile DDR SDRAM
IS43LR32160B, IS46LR32160B 4M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32160B is 536,870,912 bits CMOS Mobile Double Data Rate Sy.
ATMEL Corporation
AT42QT2160 - 16-key QMatrix Touch Sensor
Atmel AT42QT2160 16-key QMatrix Touch Sensor IC DATASHEET Features Number of keys: up to 16 keys, and one slider (constructed from 2 to 8 keys) .
GOOD-ARK
SSF2160G4 - 20V N-Channel MOSFET
Main Product Characteristics VDSS 20V RDS(on) 28mohm(typ.) ID 4.5A SOT23-3 Features and Benefits Advanced trench MOSFET process technology S.
Linear Technology
LTC2160 - Low-Power ADC
Features n 77dB SNR n 90dB SFDR n Low Power: 87mW/63mW/45mW n Single 1.8V Supply n CMOS, DDR CMOS, or DDR LVDS Outputs n Selectable Input Ranges: 1VP-.
Seiko Instruments Inc
G121600N000 - LIQUID CRYSTAL DISPLAY MODULE
AN.No.G121600N000-3D0E LIQUID CRYSTAL DISPLAY MODULE G121600N000 USER’S MANUAL www.DataSheet.net/ Seiko Instruments Inc. Datasheet pdf - http://w.
Infineon Technologies AG
HYB18T512160A - 512-Mbit Double-Data-Rate-Two SDRAM
D a t a S h e e t , Rev. 1.13, M a i 2 00 4 HYB18T512[400/800/160]AC–[3.7/5] HYB18T512[400/800/160]AF–[3.7/5] 512-Mbit Double-Data-Rate-Two SDRAM DD.
Infineon Technologies AG
HYB25D512160AT - 512Mbit Double Data Rate SDRAM
D a t a S h e e t , R e v. 1 . 0 , M ar c h 2 0 0 4 HYB25D512400AT HYB25D512800AT HYB25D512160AT 512Mbit Doubl e Data Rat e SDRAM DDR SDRAM M e m o.
ISSI
IS46LD32160A - 512Mb Mobile LPDDR2 S4 SDRAM
IS43/46LD16320A IS43/46LD32160A 512Mb (x16, x32) Mobile LPDDR2 S4 SDRAM FEATURES • Low-voltage Core and I/O Power Supplies VDD2 = 1.14-1.30V, VDDC.
ISSI
IS43LD32160A - 512Mb Mobile LPDDR2 S4 SDRAM
IS43/46LD16320A IS43/46LD32160A 512Mb (x16, x32) Mobile LPDDR2 S4 SDRAM FEATURES • Low-voltage Core and I/O Power Supplies VDD2 = 1.14-1.30V, VDDC.
