21N06 Datasheet | Specifications & PDF Download

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Ie\Q %&$ #™3 Power-Transistor Features Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3 B53 Q( @D9=9J54 D53 8>? F5BD5BC Q

Rating: 1 ★ (5 votes)

Ie\Q %&$ #™3 Power-Transistor Features Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3 B53 Q( @D9=9J54 D53 8>? F5BD5BC Q

Rating: 1 ★ (4 votes)

Silicon N-Channel Power MOSFET CS21N06 A4 General Description： VDSS 60 CS21N06 A4, the silicon N-channel Enhanced ID 21 VDMOSFETs, is obtained b

Rating: 1 ★ (4 votes)

Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D²PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive

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GOFORD DESCRIPTION The 21N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide v

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Silicon N-Channel Power MOSFET CS21N06 A3 General Description： VDSS 60 CS21N06 A3, the silicon N-channel Enhanced ID 21 VDMOSFETs, is obtained b

Rating: 1 ★ (3 votes)

Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level

Rating: 1 ★ (2 votes)

Philips Semiconductors Product specification N-channel TrenchMOS™ transistor Logic level FET FEATURES • ’Trench’ technology • Low on-state resistanc

Rating: 1 ★ (2 votes)

Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level

Rating: 1 ★ (2 votes)

RSD221N06FRA Nch 60V 22A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD 60V 26m 22A 20W Features 1) Low on-resistance. 2) Fast switching spee

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RSD221N06 Nch 60V 22A Power MOSFET RSD221N06 Datasheet VDSS RDS(on) (Max.) ID PD 60V 26mW 22A 20W lFeatures 1) Low on-resistance. 2) Fast switchi

Rating: 1 ★ (2 votes)

Philips Semiconductors Product specification N-channel TrenchMOS™ transistor Logic level FET FEATURES • ’Trench’ technology • Low on-state resistanc

Rating: 1 ★ (1 votes)

Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level

Rating: 1 ★ (1 votes)

Philips Semiconductors Product specification N-channel TrenchMOS™ transistor Logic level FET FEATURES • ’Trench’ technology • Low on-state resistanc

Rating: 1 ★ (1 votes)

Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level

Rating: 1 ★ (1 votes)

STP21N06L STP21N06LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STP21N06L STP21N06LFI s s s s s s s s V DSS 60 V 60 V R D

Rating: 1 ★ (1 votes)

STP21N06L STP21N06LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STP21N06L STP21N06LFI s s s s s s s s V DSS 60 V 60 V R D

Rating: 1 ★ (1 votes)

Ie\Q %&$ #™3 Power-Transistor Features Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3 B53 Q( @D9=9J54 D53 8>? F5BD5BC Q

Rating: 1 ★ (1 votes)