22N10 Datasheet | Specifications & PDF Download

DATA SHEET www.onsemi.com MOSFET - Single, N-Channel 100 V, 25 mW, 24 A NTTFD022N10C V(BR)DSS 100 V RDS(ON) MAX 25 mW @ 10 V 61 mW @ 6 V ID MAX 24

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() CRST024N10N3Z,CRSS022N10N3Z SkyMOS3 N-MOSFET 100V, 2mΩ, 180A Features • Uses CRM(CQ) advanced SkyMOS3 technology • Extremely low on-resistance RD

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ISC022N10NM6 MOSFET OptiMOSTM 6 Power-Transistor, 100 V Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x

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AGMH022N10C ● General Description The AGMH022N10C combines advanced trench MOSFET technology with a low resistance package to provide extremely low R

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LinearTM Power MOSFET w/ Extended FBSOA IXTN22N100L N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM

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isc N-Channel MOSFET Transistor IPD122N10N3,IIPD122N10N3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤12.2mΩ ·Enhancement mode: ·100% avalan

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Green Product BLM22N10 100V N-Channel Power MOSFET DESCRIPTION The BLM22N10 uses advanced trench technology to provide excellent RDS(ON), low gate c

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LMN22N10SF Rev. 1.0 LMN22N10SF 100V N-Channel Enhancement Mode MOSFET Features ● RDS(ON) = 22mΩ@VGS = 10V ● RDS(ON) = 32mΩ@VGS = 4.5V ● Improved dv/

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() CRSS022N10N4 SkyMOS4 N-MOSFET 100V, 2.2mΩ, 190A Features • Uses CRM(CQ) advanced SkyMOS4 technology • Extremely low on-resistance RDS(on) • Excel

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IPD122N10N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc

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LMN22N10XF Rev. 1.0 LMN22N10XF 100V N-Channel MOSFET Features ● 100V,45A, RDS(ON) <22mΩ@VGS = 10V ● Improved dv/dt capability ● Fast switching ● 100

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LMN22N10DF 100V N-Channel MOSFET LMN22N10DF Rev. 1.0 Features ● 100V,40A, RDS(ON) =24mΩ@VGS = 10V ● Improved dv/dt capability ● Fast switching ● 100

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() Features • Uses CRM(CQ) advanced SkyMOS4 technology • Extremely low on-resistance RDS(on) • Excellent QgxRDS(on) product(FOM) • AEC-Q101 Qualified

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 22N10 ·FEATURES ·Drain Current ID= 22A@ TC=25℃ ·Drain Source Voltag

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IPD122N10N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc

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HYG022N10NS1TA Feature  100V/249A RDS(ON)=2.2 mΩ (typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen-Free Devices Available (RoH

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RFP22N10, RF1S22N10SM Data Sheet January 2002 File Number 2385.3 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manu

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RFP22N10, RF1S22N10SM Data Sheet January 2002 File Number 2385.3 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manu

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RFP22N10, RF1S22N10SM Data Sheet July 1999 File Number 2385.3 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufac

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Elektronische Bauelemente SPR22N10 22A , 100V , RDS(ON) 48 mΩ N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specif

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