INCHANGE Semiconductor isc N-Channel MOSFET Transi.
AGMSEMI
AGMH022N10C - MOSFET
AGMH022N10C ● General Description The AGMH022N10C combines advanced trench MOSFET technology with a low resistance package to provide extremely low R.
Inchange Semiconductor
22N10 - N-Channel MOSFET
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 22N10 ·FEATURES ·Drain Current ID= 22A@ TC=25℃ ·Drain Source Voltag.
Infineon
IPD122N10N3G - Power-Transistor
IPD122N10N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc.
SeCoS
SPR22N10 - N-Channel Enhancement Mode Power MOSFET
Elektronische Bauelemente SPR22N10 22A , 100V , RDS(ON) 48 mΩ N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specif.
ON Semiconductor
NTTFD022N10C - N-Channel MOSFET
DATA SHEET www.onsemi.com MOSFET - Single, N-Channel 100 V, 25 mW, 24 A NTTFD022N10C V(BR)DSS 100 V RDS(ON) MAX 25 mW @ 10 V 61 mW @ 6 V ID MAX 24.
Fairchild Semiconductor
RFP22N10 - 22A/ 100V/ 0.080 Ohm/ N-Channel Power MOSFETs
RFP22N10, RF1S22N10SM Data Sheet January 2002 File Number 2385.3 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manu.
Intersil Corporation
RFP22N10 - 22A/ 100V/ 0.080 Ohm/ N-Channel Power MOSFETs
RFP22N10, RF1S22N10SM Data Sheet July 1999 File Number 2385.3 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufac.
Fairchild Semiconductor
RF1S22N10SM - 22A/ 100V/ 0.080 Ohm/ N-Channel Power MOSFETs
RFP22N10, RF1S22N10SM Data Sheet January 2002 File Number 2385.3 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manu.
Intersil Corporation
RF1S22N10SM - 22A/ 100V/ 0.080 Ohm/ N-Channel Power MOSFETs
RFP22N10, RF1S22N10SM Data Sheet July 1999 File Number 2385.3 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufac.
IXYS
IXTN22N100L - Power MOSFET
LinearTM Power MOSFET w/ Extended FBSOA IXTN22N100L N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM.
Infineon
IPD122N10N3 - Power-Transistor
IPD122N10N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc.
INCHANGE
IPD122N10N3 - N-Channel MOSFET
isc N-Channel MOSFET Transistor IPD122N10N3,IIPD122N10N3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤12.2mΩ ·Enhancement mode: ·100% avalan.
BELLING
BLM22N10 - 100V N-Channel Power MOSFET
Green Product BLM22N10 100V N-Channel Power MOSFET DESCRIPTION The BLM22N10 uses advanced trench technology to provide excellent RDS(ON), low gate c.
CR Micro
CRSG022N10N4Q - SkyMOS4 N-MOSFET
() Features • Uses CRM(CQ) advanced SkyMOS4 technology • Extremely low on-resistance RDS(on) • Excellent QgxRDS(on) product(FOM) • AEC-Q101 Qualified .
CR Micro
CRSS022N10N3Z - SkyMOS3 N-MOSFET
() CRST024N10N3Z,CRSS022N10N3Z SkyMOS3 N-MOSFET 100V, 2mΩ, 180A Features • Uses CRM(CQ) advanced SkyMOS3 technology • Extremely low on-resistance RD.
CR Micro
CRSS022N10N4 - SkyMOS4 N-MOSFET
() CRSS022N10N4 SkyMOS4 N-MOSFET 100V, 2.2mΩ, 190A Features • Uses CRM(CQ) advanced SkyMOS4 technology • Extremely low on-resistance RDS(on) • Excel.
