2310 Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Switching Speed ·Minimum Lot-to-Lot

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AONS32310 30V N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS

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XINDALI ELECTRONICS(H.K.) CO., LIMITED HS-23101A/BX Pb Pb-free PACKAGE DIMENSION 10 32.4 5.5 60.00 56.80(2.30˝) 69.70(2.78˝) PIN 1 + 47.80(1.9˝

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LINEAR INTEGRATED CIRCUIT Hi-Fi DUAL PREAMPLI FI ER The TDA2310 is a dual high quality class A preamplifier intended for extremely low distortion app

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® ST2310FX HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR NEW SERIES, ENHANCED PERFORMANCE FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNT

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SI2310 N-Channel 60-V (D-S) MOSFET www.VBsemi.tw PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.085 at VGS = 10 V 60 0.096 at VGS = 4.5 V ID (A)a 4.0 3.

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G2310-VB G2310-VB Datasheet N-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.075 at VGS = 10 V 60 0.086 at VGS =

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AP2310AGN-VB AP2310AGN-VB Datasheet N-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.075 at VGS = 10 V 60 0.086

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AP2310GN-HF-VB AP2310GN-HF-VB Datasheet N-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.075 at VGS = 10 V 60 0.0

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EUA2310B 15-W Stereo Class-D Audio Power Amplifier with Speaker Protection DESCRIPTION The EUA2310B is a high efficiency, 2 channel bridged-tied load

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HM2310-VB HM2310-VB Datasheet N-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.075 at VGS = 10 V 60 0.086 at VGS

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CJ2310-VB CJ2310-VB Datasheet N-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.075 at VGS = 10 V 60 0.086 at VGS

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www.DataSheet4U.com ® ST2310HI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s s NEW SERIES, ENHANCHED PERFORMANCE FULLY INSULATED PA

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SMG2310B-VB SMG2310B-VB Datasheet N-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.075 at VGS = 10 V 60 0.086 at

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KD2310-VB KD2310-VB Datasheet N-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.075 at VGS = 10 V 60 0.086 at VGS

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L2310-VB L2310-VB Datasheet N-Channel 100-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V ID (A) a Configuration 1

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MD2310FX High voltage NPN power transistor for standard definition CRT display Features ■ State-of-the-art technology: – diffused collector “enhanced

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NVS2310 Datasheet www.nextchip.com Jun 01, 2011 Rev. 1.02 Copyright ⓒ 2011 by NEXTCHIP Co., Ltd. All rights reserved. The material in this data sheet

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2310-VB TO223 2310-VB TO223 Datasheet N-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.076 at VGS = 10 V 60 0.085

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Signal Signal Relays AXICOM Telecom-, Signal and RF Relays AXICOM Reed V23100-V4 Relay Reed Relay V23100 -V4 Coil Data (values at 23 °C) n Direct c

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