SI2310 - N-Channel Power MOSFET

Key Features

Simple Drive Requirement.
Small Package Outline.
Surface Mount Device Absolute Maximum Ratings Ta=25℃ Parameter Drain-Source Voltage Gate-Source Voltage Drain-Current -Continuous TA=25℃ TA=70℃ Pulsed Drain Current.
Power Dissipation.
Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range.
2.Pulse width ≤300us , duty cycle≤ 2% Symbol VDS VGS ID IDM PD RthJA Tj. Tstg Rating 60 ±20 3 2.3 10 1.25 100 -55 to 150 Unit V V A W ℃/W ℃.

SI2310 n-channel power mosfet by CCSemi - Datasheet Preview

Datasheet Details

Part number	SI2310
Manufacturer	CCSemi
File Size	572.13 KB
Description	N-Channel Power MOSFET
Datasheet	SI2310 Datasheet

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MOSFET N-Channel Power MOSFET SI2310 Features ◆ Simple Drive Requirement ◆ Small Package Outline ◆ Surface Mount Device Absolute Maximum Ratings Ta=25℃ Parameter Drain-Source Voltage Gate-Source Voltage Drain-Current -Continuous TA=25℃ TA=70℃ Pulsed Drain Current * Power Dissipation* Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range * 2.Pulse width ≤300us , duty cycle≤ 2% Symbol VDS VGS ID IDM PD RthJA Tj.Tstg Rating 60 ±20 3 2.3 10 1.25 100 -55 to 150 Unit V V A W ℃/W ℃ www.canctech.com Revision 2016/8/15 @2016-2017 CCSemi .