23N50 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 23A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance :

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IRFP23N50L, SiHFP23N50L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS =

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FMH23N50E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by

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UNISONIC TECHNOLOGIES CO., LTD 23N50E Preliminary 23A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The 23N50E uses advanced UTC technology to provid

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MDQ23N50D N-Channel MOSFET 500V MDQ23N50D N-Channel MOSFET 500V, 23A, 0.245Ω General Description . These N-channel MOSFET are produced using advance

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iscN-Channel MOSFET Transistor IRFP23N50L ·FEATURES ·Low drain-source on-resistance: RDS(ON) =0.235Ω (MAX) ·Enhancement mode: Vth = 3.0 to 5.0V (VDS

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IRFP23N50L, SiHFP23N50L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 1

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www.DataSheet.co.kr FMV23N50E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllabl

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-3PN packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested

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TSA23N50M TSA23N50M 500V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

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FMH23N50ES Super FAP-E3S series http://www.fujielectric.com/products/semiconductor/ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Features Mainta

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www.DataSheet.co.kr FMV23N50ES Super FAP-E3S series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controlla

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R1223N SERIES PWM/VFM step-down DC/DC Controller NO.EA-065-130424 OUTLINE The R1223N Series are CMOS-based PWM step-down DC/DC Converter controller

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FMH23N50E Super FAP-E3 series FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Features Maintains both low power loss and low noise Lower RDS(on) ch

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R1223N SERIES PWM/VFM step-down DC/DC Controller NO.EA-065-130424 OUTLINE The R1223N Series are CMOS-based PWM step-down DC/DC Converter controller

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R1223N SERIES PWM/VFM step-down DC/DC Controller NO.EA-065-130424 OUTLINE The R1223N Series are CMOS-based PWM step-down DC/DC Converter controller

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Silan Microelectronics SVF23N50PN_Datasheet 23A 500V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF23N50PN is an N-channel enhancement mode power MOS fie

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  JEDEC Qualification BVDSS 500V TMAN23N50 N-channel

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IRFP23N50L, SiHFP23N50L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS =

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  JEDEC Qualification BVDSS 500V TMAN23N50A N-channe

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