240-CHANNEL Datasheet | Specifications & PDF Download

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFP240 FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Volt

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IS32FL3240 30-CHANNEL LED DRIVER GENERAL DESCRIPTION The IS32FL3240 is an LED driver with 30 constant current channels. Each channel can be pulse widt

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IRF240 MECHANICAL DATA Dimensions in mm (inches) 40.01 (1.575) Max. 26.67 (1.050) Max. 4.47 (0.176) Rad. 2 Pls. N–CHANNEL POWER MOSFET FOR HI–REL A

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IRFP240 Data Sheet July 1999 File Number 2087.4 20A, 200V, 0.180 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field

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: 2SK240 SILICON N CHANNEL JUNCTION TYPE LOW NOISE AUDIO AMPLIFIER APPLICATIONS. DIFFERENTIAL AMPLIFIER APPLICATIONS. FEATURES • Recommended for

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REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®TRANSISTORS THRU-HOLE (TO-204AE) Product Summary Part Number BVDSS IRF240 200V RDS(on) ID 0.18 1

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DT1240A-04LP 4 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY Product Summary VBR (Min) 5V IPP (Max) 5.5A CT (Typ) 0.55pF Description The DT1240A-04LP i

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 3.6mΩ@VGS=10V ·Fully characterized avalanche voltage and curr

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LAB MECHANICAL DATA Dimensions in mm (inches) SEME IRF240SMD N–CHANNEL POWER MOSFET 3 .6 0 (0 .1 4 2 ) M a x . 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0

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IT7020C/CY Durable High-Voltage 240-Channel Common Driver for Dot-Matrix STN LCD Preliminary Specification V0.7 INTEGRATED TECHNOLOGY EXPRESS, INC.

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www.DataSheet.co.kr P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -6A, RDS(ON) = 44mΩ @VGS = -4.5V. RDS(ON) = 65mΩ @VGS = -2.5V.

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Ordering number : EN8603 2SK2405 SANYO Semiconductors DATA SHEET 2SK2405 Features • Built-in FRD. • 10V drive. N-Channel Silicon MOSFET General-Pu

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isc N-Channel MOSFET Transistor BUK9240-100A FEATURES ·Drain Current : ID= 33A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF240 DESCRIPTION ·Drain Current ID=18A@ TC=25℃ ·Drain Source Volt

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IRFP240B November 2001 IRFP240B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produc

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AON2408 20V N-Channel MOSFET General Description The AON2408 combines advanced trench MOSFET technology with a low resistance package to provide extr

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Data Sheet FEATURES Micropower, Dual-Channel Digital Isolators ADuM1240/ADuM1241/ADuM1245/ADuM1246 FUNCTIONAL BLOCK DIAGRAM VDD1 1 GND1 2 NIC 3 NIC 4

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NEW PRODUCT Product Summary BVDSS 20V RDS(ON) MAX 0.6Ω @ VGS = 4.5V 0.8Ω @ VGS = 2.5V 1.0Ω @ VGS = 1.8V 1.6Ω @ VGS = 1.5V NOT RECOMMENDED FOR NEW

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N-CHANNEL POWER MOSFET IRF240 • Low RDS(on) MOSFET Transistor In A Hermetic Metal Package • Designed For Switching, Power Supply, Motor Control and A

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IRF7240TRPBF IRF7240TRPBF Datasheet P-Channel 40 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) - 40 RDS(on) () 0.010 at VGS = - 10 V 0.0

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