240-CHANNEL Datasheet | Specifications & PDF Download

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFP240 FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Volt

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MOSFET – N-Channel, POWERTRENCH) 80 V, 240 A, 2.0 mW FDBL86363-F085 Features  Typical RDS(on) = 1.5 mW at VGS = 10 V, ID = 80 A  Typical Qg(tot) =

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MOSFET – N-Channel, POWERTRENCH) 100 V, 240 A, 2.6 mW FDBL86063-F085 Features • Typical RDS(on) = 2 mW at VGS = 10 V, ID = 80 A • Typical Qg(tot) = 7

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 MOS-TECH Semiconductor Co.,LTD 07 40 N-Channel PowerMOSFET 40V,  A, 2.mΩ Features • RDS(on) = .4mΩ (Typ.)@ VGS = 10V, ID = 80A • Qg(tot) = 

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MTC2402Q8-VB MTC2402Q8-VB Datasheet N- and P-Channel 20-V (D-S) MOSFETS www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.006 at VGS = 4.5 V N

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Ordering number : EN*A1490 Thick-Film Hybrid IC STK433-240A-E Overview 3-channel class AB audio power IC, 40W+40W+40W The STK433-240A-E is a hybri

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MOSFET – POWERTRENCH) N-Channel 100 V, 240 A, 4.1 mW FDBL86066-F085 Features • Typical RDS(on) = 3.3 mW at VGS = 10 V, ID = 80 A • Typical Qg(tot) = 4

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MT3240A/B N-Channel Low Q g Š MOSFET  40V,250A,2.3mΩ )HDWXUHV ‡ Max RDS (on)=2.3m: at VGS =10V,ID=40A ‡ High performanc

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FDBL86566-F085 N-Channel PowerTrench® MOSFET FDBL86566-F085 N-Channel PowerTrench® MOSFET 60 V, 240 A, 2.4 mΩ Features „ Typical RDS(on) = 1.9 mΩ at

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MT3240B/B N-Channel Low Q g Š MOSFET  40V, 208A, 2.5mΩ )HDWXUHV ‡ Max RDS (on)=2.5m: at VGS =10V,ID =40A ‡ High perform

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FDB0250N807L N-Channel PowerTrench® MOSFET March 2016 FDB0250N807L N-Channel PowerTrench® MOSFET 80 V, 240 A, 2.2 mΩ Features „ Max rDS(on) = 2.2 m

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NJW1240 5Vrms Ground Referenced 6-Channel Line Amplifier „ GENERAL DESCRIPTION The NJW1240 is a 6-channel audio line amplifier for High Voltage Pre-

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FDBL0150N60 N-Channel PowerTrench® MOSFET FDBL0150N60 N-Channel PowerTrench® MOSFET 60 V, 240 A, 1.5 mΩ June 2015 Features „ Typical RDS(on) = 1.1

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: 2SK240 SILICON N CHANNEL JUNCTION TYPE LOW NOISE AUDIO AMPLIFIER APPLICATIONS. DIFFERENTIAL AMPLIFIER APPLICATIONS. FEATURES • Recommended for

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N-CHANNEL POWER MOSFET IRF240 • Low RDS(on) MOSFET Transistor In A Hermetic Metal Package • Designed For Switching, Power Supply, Motor Control and A

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DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32400, NE24200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE3240

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FDBL0240N100 N-Channel PowerTrench® MOSFET FDBL0240N100 N-Channel PowerTrench® MOSFET 100 V, 210 A, 2.8 mΩ Features „ Max RDS(on) = 2.8 mΩ at VGS =

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IRF240 MECHANICAL DATA Dimensions in mm (inches) 40.01 (1.575) Max. 26.67 (1.050) Max. 4.47 (0.176) Rad. 2 Pls. N–CHANNEL POWER MOSFET FOR HI–REL A

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IS32FL3240 30-CHANNEL LED DRIVER GENERAL DESCRIPTION The IS32FL3240 is an LED driver with 30 constant current channels. Each channel can be pulse widt

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P2402CAG www.VBsemi.com P2402CAG N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 0.023 at VGS = 10 V 30 0.027 at VGS = 4.5 V ID

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