25.0V Datasheet | Specifications & PDF Download

M25P10 1 Mbit Low Voltage Paged Flash Memory With 20 MHz Serial SPI Bus Interface PRELIMINARY DATA s 1 Mbit PAGED Flash Memory s 128 BYTE PAGE PROGRA

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BUY25CS12J-01 250V Radiation Hard power MOSFET BUY25CS12J-01(ES) Features  Low RDS(on)  Single Event Effect (SEE) hardened LET 85, Range: 118µm

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Public IPZA65R025CM8 Final datasheet MOSFET 650V CoolMOS™ CM8 Power Transistor The CoolMOS™ 8th generation platform is a revolutionary technology for

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SM1A25NSUB-VB SM1A25NSUB-VB Datasheet N-Channel 100 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 100 RDS(on) () 0.110 at VGS = 10 V 0.115 at VGS = 6 V

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8N25/F8N25/I8N25/ E8N25/B8N25/D8N25 8A 250V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs, is obtained by

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W25X10, W25X20, W25X40, W25X80 1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI Publication Release Date: J

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■DESCRIPTION The SMC2562ESG6 is the N+P channel complementary mode power field effect transistors, used trench technology are well suited for high eff

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IPL60R125P7 MOSFET 600V CoolMOSª P7 Power Transistor The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFET

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25N10/F25N10/I25N10/ E25N10/B25N10/D25N10 25A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs Used adva

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CBL25N10K-VB CBL25N10K-VB Datasheet N-Channel 100-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 100 0.030 at VGS = 10 V

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Public IPT60R125CFD7 Final datasheet MOSFET 600V CoolMOS™ CFD7 Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs

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K2925-VB K2925-VB Datasheet N-Channel 60 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 60 RDS(on) () Max. 0.073 at VGS = 10 V 0.085 at V

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SM2F05NSU-TRG-VB SM2F05NSU-TRG-VB Datasheet N-Channel 250 V (D-S) 175 °C MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () Qg max. (nC) Qgs

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SSD2504-VB SSD2504-VB Datasheet N-Channel 100 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 100 RDS(on) () 0.114 at VGS = 10 V ID (A) 1

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APM2510NUC-TRL-VB APM2510NUC-TRL-VB Datasheet N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.005 at VGS = 10

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T254L-VB T254L-VB Datasheet N-Channel 150-V (D-S) 175 °C MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 150 0.030 at VGS = 10 V 0.0

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Silicon Carbide (SiC) Diode – EliteSiC, TO247-2, 25 A, 1700 V SiC Merged PiN-Schottky (MPS) Diode UJ3D1725K2 Description onsemi offers the 3rd generat

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IPL60R225CFD7 MOSFET 600V CoolMOSª CFD7 Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to

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Silicon Carbide (SiC) Diode – EliteSiC, TO247-2, 50 A, 1200 V SiC Merged PiN-Schottky (MPS) Diode UJ3D1250K2 Description onsemi offers the 3rd generat

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www.vishay.com SiZ250DT Vishay Siliconix Dual N-Channel 60 V (D-S) MOSFETs PowerPAIR® 3 x 3S S2 5 S2 6 S2 7 G2 8 S(P1/iDn 2 9) D1 3.3 mm 1

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