2622 Datasheet | Specifications & PDF Download

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TGA2622-CP 9 – 10 GHz 35 W GaN Power Amplifier Product Description Qorvo’s TGA2622-CP is a packaged high-power X-Band amplifier fabricated on Qorvo’s

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TGA2622 ® 9.0 – 10.0 GHz 40 Watt GaN Power Amplifier Product Overview Qorvo’s TGA2622 is an x-band, high power MMIC amplifier fabricated on Qorvo’s

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NJU26226 Dolby Virtual Speaker / Dolby Headphone with Dolby Pro Logic IIx Decoder General Description NJU26226 expand stereo or 5.1 surround signa

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APA2622 15W Stereo Class-D Audio Power Amplifier Features • Supply Voltage is 4.5V ~ 26V • Class D operation eliminates heat sink & reduce power sup

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lN2620, A, B(SILICON) thru lN2624, A, B Temperature-compensated zener reference diodes utilizing an oxide-passivated junction for long-term voltage s

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HS-2620RH, HS-2622RH Data Sheet August 1999 File Number 4014.1 Radiation Hardened, Very Wideband, High Input Impedance Uncompensated Operational Ampl

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www.DataSheet4U.net 256Mbit MOBILE DDR SDRAM based on 2M x 4Bank x32 I/O Specification of 256Mb (8Mx32bit) Mobile DDR SDRAM Memory Cell Array - Org

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Plastic Film Capacitors Metallized Polypropylene Film Capacitor Type : ECWH(V) Designed for high frequency and pluse applications. ■ Features • Lo

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bq26220 SLUS521B − AUGUST 2002 − REVISED FEBRUARY 2004 HIGHĆPERFORMANCE BATTERY MONITOR IC WITH COULOMB COUNTER, VOLTAGE AND, TEMPERATURE MEASUREMENT

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ST7262xxx Low speed USB 8-bit MCU with 3 endpoints, Flash or ROM memory, LVD, WDG, 10-bit ADC, 2 timers, SCI, SPI Features ■ Memories – 8 or 16 Kbyte

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2622GY-VB 2622GY-VB Datasheet Dual N-Channel 60 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 1.8 at VGS = 10 V ID (mA)

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www.DataSheet4U.com 256MBit MOBILE SDR SDRAMs based on 2M x 4Bank x32 I/O Specification of 256M (8Mx32bit) Mobile SDRAM Memory Cell Array - Organiz

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www.DataSheet4U.com 256MBit MOBILE SDR SDRAMs based on 2M x 4Bank x32 I/O Specification of 256M (8Mx32bit) Mobile SDRAM Memory Cell Array - Organiz

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www.DataSheet4U.com 256Mb : x32 Dual Die Synchronous DRAM 256M (8Mx32bit) Hynix SDRAM Memory This document is a general product description and is

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lN2620, A, B(SILICON) thru lN2624, A, B Temperature-compensated zener reference diodes utilizing an oxide-passivated junction for long-term voltage s

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Features  N-Channel，2.5V logic level control  Enhancement mode  Low on-resistance RDS(on) @ VGS=2.5 V  Fast Switching and High efficiency  Pb-fre

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NJU26220 Dolby Virtual Speaker / Dolby Headphone Decoder General Description The NJU26220 simulates a highly realistic 5.1-speaker surround sound li

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