TGA2622 Datasheet (TriQuint Semiconductor)

TGA2622, GaN Power Amplifier

TriQuint’s TGA2622 is an x-band, high power MMIC amplifier fabricated on TriQuint’s production 0.25um GaN on SiC process.

The TGA2622 operates from 9 * 10GHz and provides a superior combination of power, gain and efficiency.

Achieving 40W of saturated output power with 28dB of large signal g

TGA2622 Features

* Frequency Range: 9

* 10GHz

* PSAT: 46dBm @ PIN = 18dBm

* P1dB: >40dBm

* PAE: >46% @ PIN = 18dBm

* Large Signal Gain: 28dB

* Small Signal Gain: 32dB

* Bias: VD = 28V, IDQ = 290mA, VG = -2.7V Typical

* Pulsed VD: PW = 100us and DC = 10%

* Chip Dimensions: