TGA2622 Datasheet - TriQuint Semiconductor

GaN Power Amplifier

TGA2622 Features

* Frequency Range: 9

* 10GHz

* PSAT: 46dBm @ PIN = 18dBm

* P1dB: >40dBm

* PAE: >46% @ PIN = 18dBm

* Large Signal Gain: 28dB

* Small Signal Gain: 32dB

* Bias: VD = 28V, IDQ = 290mA, VG = -2.7V Typical

* Pulsed VD: PW = 100us and DC = 10%

* Chip Dimensions:

TGA2622 General Description

TriQuint’s TGA2622 is an x-band, high power MMIC amplifier fabricated on TriQuint’s production 0.25um GaN on SiC process. The TGA2622 operates from 9 * 10GHz and provides a superior combination of power, gain and efficiency. Achieving 40W of saturated output power with 28dB of large signal g.

TGA2622 Datasheet (517.15 KB)

TGA2622 Datasheet Preview — Preview of TGA2622 PDF

Datasheet Details

Part number:

TGA2622

Manufacturer:

TriQuint Semiconductor

File Size:

517.15 KB

Description:

Gan power amplifier.

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TGA2622 GaN Power Amplifier TriQuint Semiconductor

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TGA2622 Features

TGA2622 General Description

Datasheet Details

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Description:

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