TGA2622-CP Datasheet - TriQuint Semiconductor

TGA2622-CP GaN Power Amplifier

TriQuint’s TGA2622-CP is a packaged, high power Xband amplifier fabricated on TriQuint’s TQGaN25 0.25 um GaN on SiC production process. Operating from 9 * 10 GHz, the TGA2622-CP achieves 35 W saturated output powers, a power-added efficiency of greater than 43 %, and power gain of 27.5 dB. T.

TGA2622-CP Features

* Frequency Range: 9

* 10 GHz

* PSAT: 45.5 dBm @ PIN = 18 dBm

* PAE: >43% @ PIN = 18 dBm

* Power Gain: 27.5 dB @ PIN = 18 dBm

* Bias: VD = 28 V, IDQ = 290 mA, VG = -2.7 V Typical (Pulsed VD: PW = 100 us and DC = 10 %)

* Package Dimensions: 15.2 x 15.2 x 3.5 mm

* P

TGA2622-CP-TriQuintSemiconductor.pdf

TGA2622-CP Datasheet Preview — Preview of TGA2622-CP PDF

Datasheet Details

Part number:

TGA2622-CP

Manufacturer:

TriQuint Semiconductor

File Size:

552.81 KB

Description:

Gan power amplifier.

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TAGS

TGA2622-CP TGA2622-CP GaN Power Amplifier TriQuint Semiconductor

TGA2622-CP Distributor