28-CHANNEL Datasheet | Specifications & PDF Download

ChipSourceTek LTK5328PBTL_28W  LTK5328 LTK5328 2 8W ， PBTL 、、AGC 、AB/D 、 、 EMI。PBTL ， ，。 ， ，， ，。 LTK5328 2 ALC ， ，。 AB/D ，AB FM 。 RF 。  L

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MMF60R280Q Datasheet MMF60R280Q 600V 0.28Ω N-channel MOSFET  Description MMF60R280Q is power MOSFET using Magnachip’s advanced super junction techno

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Ver 1.2 12-Bit 8-Channel 1MSPS Analog to Digital Converter Datasheet Part Number：B128S102RH Version No. 1.0 1.1 1.2 Publish Time 2017.1 2017.9 2018.

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2SK2837 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2837 Chopper Regulator, DC−DC Converter and Motor Drive Applications z

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2SK3528-01R FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings TO-3PF Super FAP-G Series Features High speed switching Low on-resistan

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TTK2837 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TTK2837 Switching Regulator Applications • Low drain-source on-resistance

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed ·Minimum Lo

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isc N-Channel MOSFET Transistor 2SK2803 FEATURES ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Static Drain-Source On-Res

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isc N-Channel MOSFET Transistor 2SK2848 FEATURES ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Static Drain-Source On-Res

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 150V(Min) ·Static drain-source on-resistance : RDS(on) ≤ 15mΩ@VGS=10V ·100%

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isc N-Channel MOSFET Transistor 2SK3528-01R FEATURES ·Drain Current : ID= 17A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source O

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2SK2885(L), 2SK2885(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-545 A 2nd. Edition Features • Low on-resistance R DS(on) = 10mΩ t

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CEM4228 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 6.3A, RDS(ON) = 30mΩ @VGS = 10V. RDS(ON) = 45mΩ @VGS = 4.5V. Super high

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 37mΩ(Max) ·Fast Swi

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MT28N20A N N-CHANNEL MOSFET MAIN CHARACTERISTICS Package ID VDSS R(-d@sVogns=-1m0aVx） Qg-typ 28A 200V 85mΩ 52nC  DC/DC    APPLICAT

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P2806AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 30mΩ @VGS = 10V ID 34A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25

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2SK2800 Silicon N Channel MOS FET High Speed Power Switching ADE-208-513G (Z) 8th. Edition Jun 1998 Features • Low on-resistance R DS(on) = 15 mΩ typ

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TPC8028 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8028 Lithium Ion Battery Applications Portable Equipment Application

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