M28C16 16K (2K x 8) PARALLEL EEPROM with SOFTWARE .
Samsung Electronics
KM28C16 - (KM28C16 / KM28C17) 2K X 8-Bit CMOS EEPROM
www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.
ATMEL
AT28C16-T - 16K (2K x 8) PCMCIA Nonvolatile Attribute Memory
Features • Ideal Rewritable Attribute Memory • Simple Write Operation – Self-Timed Byte Writes – On-chip Address and Data Latch for SRAM-like Write Op.
Exel Microelectronics
XL28C16B - 2K x 8 CMOS EEPROM
w w a D . w S a t e e h U 4 t m o .c w w w .D t a S a e h t e U 4 .c m o w w w .D a t a e h S 4 t e U . m o c .
Exel Microelectronics
XL28C16A - 2K x 8 CMOS EEPROM
w w a D . w S a t e e h U 4 t m o .c w w w .D t a S a e h t e U 4 .c m o w w w .D a t a e h S 4 t e U . m o c .
STMicroelectronics
28C16B - M28C16B
www.DataSheet4U.com M28C16B M28C17B 16 Kbit (2K x 8) Parallel EEPROM With Software Data Protection PRELIMINARY DATA s s Fast Access Time: 90 ns at V.
Catalyst Semiconductor
CAT28C16A - 16K-Bit CMOS PARALLEL E2PROM
CAT28C16A 16K-Bit CMOS PARALLEL E2PROM FEATURES s Fast Read Access Times: 200 ns s Low Power CMOS Dissipation: s End of Write Detection: DATA Polling .
ATMEL Corporation
AT28C16 - 16K 2K x 8 CMOS E2PROM
Features • Fast Read Access Time - 150 ns • Fast Byte Write - 200 µs or 1 ms • Self-Timed Byte Write Cycle – Internal Address and Data Latches – Inter.
STMicroelectronics
M28C16 - 16K (2K x 8) PARALLEL EEPROM
M28C16 16K (2K x 8) PARALLEL EEPROM with SOFTWARE DATA PROTECTION FAST ACCESS TIME: 90ns SINGLE 5V ± 10% SUPPLY VOLTAGE LOW POWER CONSUMPTION FAST W.
STMicroelectronics
M28C16B - 16 Kbit (2K x 8) Parallel EEPROM
M28C16B M28C17B 16 Kbit (2K x 8) Parallel EEPROM With Software Data Protection PRELIMINARY DATA s Fast Access Time: 90 ns at VCC=5V s Single Supply V.
STMicroelectronics
M28C16A - 16 Kbit (2K x 8) Parallel EEPROM
M28C16A M28C17A 16 Kbit (2Kb x8) Parallel EEPROM FAST ACCESS TIME: – 150ns at 5V – 250ns at 3V SINGLE SUPPLY VOLTAGE: – 5V ± 10% for M28C16A and M28C.
Exel Microelectronics
XLS28C16A - 2K x 8 CMOS Electrically RPROM
w w w .D t a S a e h t e U 4 .c m o w w w .D a t a e h S 4 t e U . m o c .
Samsung Electronics
KM28C17 - (KM28C16 / KM28C17) 2K X 8-Bit CMOS EEPROM
www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.
NanoAmp Solutions
EM28C1604C3FL - Flash and SRAM Combo Memory
NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com EM28C1604C3FL Advance Information E.
PYRAMID
PYA28C16B - EEPROM
FEATURES Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply Byte Write Cycle Time - 10 ms Maximum Low Power CMOS: - 60 mA Acti.
ON Semiconductor
CAT28C16A - 16-kb CMOS Parallel EEPROM
CAT28C16A 16 kb CMOS Parallel EEPROM Description The CAT28C16A is a fast, low power, 5V−only CMOS Parallel EEPROM organized as 2K x 8−bits. It requi.
STMicroelectronics
28C16 - 16K 2K x 8 PARALLEL EEPROM
M28C16 16K (2K x 8) PARALLEL EEPROM with SOFTWARE DATA PROTECTION NOT FOR NEW DESIGN FAST ACCESS TIME: 90ns SINGLE 5V ± 10% SUPPLY VOLTAGE LOW POWER .
Microchip Technology
28C16A - 16K (2K x 8) CMOS EEPROM
28C16A 16K (2K x 8) CMOS EEPROM FEATURES • Fast Read Access Time—150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 µA Standby • .
NanoAmp Solutions
EM28C1602C3FL - Flash and SRAM Combo Memory
NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com EM28C1602C3FL Advance Information E.
PYRAMID
PYA28C16 - EEPROM
FEATURES Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply Fast Byte Write (200µs or 1 ms) Low Power CMOS: - 60 mA Active Cur.