29F040 Datasheet | Specifications & PDF Download

Am29F040B 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS s 5.0 V ± 10% for read and write oper

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M29F040 4 Mbit (512Kb x8, Uniform Block) Single Supply Flash Memory NOT FOR NEW DESIGN M29F040 is replaced by the M29F040B 5V ± 10% SUPPLY VOLTAGE fo

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M29F040B 4 Mbit (512Kb x8, Uniform Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OP

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Am29F040B 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS s 5.0 V ± 10% for read and write oper

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PRELIMINARY Am29F040B 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory Distinctive Characteristics s 5.0 V ± 10% for read an

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HY29F040A Series 512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES · 5.0 V ± 10% Read, Program, and Erase - Minimizes system-le

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EN29F040 EN29F040 4 Megabit (512K x 8-bit) Flash Memory FEATURES • 5.0V operation for read/write/erase operations • Fast Read Access Time - 45ns, 55n

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M29F040 4 Mbit (512Kb x8, Uniform Block) Single Supply Flash Memory NOT FOR NEW DESIGN M29F040 is replaced by the M29F040B 5V ± 10% SUPPLY VOLTAGE fo

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FUJITSU SEMICONDUCTOR DATA SHEET FLASH MEMORY CMOS 4M (512K × 8) BIT MBM29F040A - 70/-90/-12 DS05–20810–3E s DISTINCTIVE CHARACTERISTICS • Single 5.

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www.DataSheet4U.com MX29F040C 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 5V ONLY EQUAL SECTOR FLASH MEMORY FEATURES • 524,288 x 8 only • Single power supp

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3UHOLPLQDU\#LQIRUPDWLRQ ® $65<)373 89#845.ð;#&026#)ODVK#((3520 )HDWXUHV • Organization:512K words × 8 bits • Industrial and commercial temperature •

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BRIGHT Microelectronics Inc. Preliminary BM29F040 4 MEGABIT (512K × 8) 5 VOLT SECTOR ERASE CMOS FLASH MEMORY GENERAL DESCRIPTION The BM29F040 is a

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MX29F040 4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES • 524,288 x 8 only • Single power supply operation - 5.0V only operation for read, er

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EN29F040A 4 Megabit (512K x 8-bit) Flash Memory EN29F040A FEATURES • 5.0V operation for read/write/erase operations • Fast Read Access Time - 45ns,

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FUJITSU SEMICONDUCTOR DATA SHEET FLASH MEMORY CMOS 4M (512K × 8) BIT DS05-20842-4E MBM29F040C-55/-70/-90 s FEATURES • • • www.DataSheet4U.com • •

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FINAL Am29F040 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS s 5.0 V ± 10% for read and writ

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Austin Semiconductor, Inc. FLASH AS29F040 512K x 8 FLASH UNIFORM SECTOR 5.0V FLASH MEMORY AVAILABLE AS MILITARY SPECIFICATIONS • MIL-STD-883 • SMD 5

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FUJITSU SEMICONDUCTOR DATA SHEET FLASH MEMORY CMOS 4M (512K × 8) BIT MBM29F040A - 70/-90/-12 DS05–20810–3E s DISTINCTIVE CHARACTERISTICS • Single 5.

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512K x 8 FLASH UNIFORM SECTOR 5.0V FLASH MEMORY AVAILABLE AS MILITARY SPECIFICATIONS • MIL-STD-883 • SMD 5962-96692 FEATURES • Single 5.0V ±10% power

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FUJITSU SEMICONDUCTOR DATA SHEET FLASH MEMORY CMOS 4M (512K × 8) BIT MBM29F040A - 70/-90/-12 DS05–20810–3E s DISTINCTIVE CHARACTERISTICS • Single 5.

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