29F040 datasheet | Specifications & PDF Download

M29F040B - 4 Mbit 512Kb x8 / Uniform Block Single Supply Flash Memory

M29F040B 4 Mbit (512Kb x8, Uniform Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OP

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Macronix International

MX29F040C - 4M-BIT [512K x 8] SINGLE VOLTAGE 5V ONLY FLASH MEMORY

www.DataSheet4U.com MX29F040C 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 5V ONLY EQUAL SECTOR FLASH MEMORY FEATURES • 524,288 x 8 only • Single power supp

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STMicroelectronics

29F040 - 4 Mbit 512Kb x8 / Uniform Block Single Supply Flash Memory

M29F040 4 Mbit (512Kb x8, Uniform Block) Single Supply Flash Memory NOT FOR NEW DESIGN M29F040 is replaced by the M29F040B 5V ± 10% SUPPLY VOLTAGE fo

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ETC

EN29F040 - 4 Megabit (512K x 8-bit) Flash Memory

EN29F040 EN29F040 4 Megabit (512K x 8-bit) Flash Memory FEATURES • 5.0V operation for read/write/erase operations • Fast Read Access Time - 45ns, 55n

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Macronix International

MX29F040 - 4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY

MX29F040 4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES • 524,288 x 8 only • Single power supply operation - 5.0V only operation for read, er

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ST Microelectronics

M29F040 - 4 Mbit 512Kb x8 / Uniform Block Single Supply Flash Memory

M29F040 4 Mbit (512Kb x8, Uniform Block) Single Supply Flash Memory NOT FOR NEW DESIGN M29F040 is replaced by the M29F040B 5V ± 10% SUPPLY VOLTAGE fo

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Fujitsu Media Devices

MBM29F040C - 4M (512K X 8) BIT FLASH MEMORY

FUJITSU SEMICONDUCTOR DATA SHEET DS05-20842-4E FLASH MEMORY CMOS 4M (512K × 8) BIT MBM29F040C-55/-70/-90 s FEATURES • • • Single 5.0 V read, progra

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AMD

AM29F040B - 4 Megabit CMOS 5.0 Volt-only Uniform Sector Flash Memory

Am29F040B 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS s 5.0 V ± 10% for read and write oper

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Fujitsu Media Devices

MBM29F040A - FLASH MEMORY 4M 512K x 8 BIT

FUJITSU SEMICONDUCTOR DATA SHEET FLASH MEMORY CMOS 4M (512K × 8) BIT MBM29F040A - 70/-90/-12 DS05–20810–3E s DISTINCTIVE CHARACTERISTICS • Single 5.

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EON

EN29F040A - 4 Megabit (512K x 8-bit) Flash Memory

EN29F040A 4 Megabit (512K x 8-bit) Flash Memory EN29F040A FEATURES • 5.0V operation for read/write/erase operations • Fast Read Access Time - 45ns,

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Advanced Micro Devices

29F040 - 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only / Uniform Sector Flash Memory

PRELIMINARY Am29F040B 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory Distinctive Characteristics s 5.0 V ± 10% for read an

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AMD

29F040B - AM29F040B

Am29F040B 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS s 5.0 V ± 10% for read and write oper

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Fujitsu

MBM29F040A-70 - FLASH MEMORY 4M 512K x 8 BIT

FUJITSU SEMICONDUCTOR DATA SHEET FLASH MEMORY CMOS 4M (512K × 8) BIT MBM29F040A - 70/-90/-12 DS05–20810–3E s DISTINCTIVE CHARACTERISTICS • Single 5.

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Fujitsu Media Devices

MBM29F040C-90 - 4M (512K X 8) BIT FLASH MEMORY

FUJITSU SEMICONDUCTOR DATA SHEET FLASH MEMORY CMOS 4M (512K × 8) BIT DS05-20842-4E MBM29F040C-55/-70/-90 s FEATURES • • • www.DataSheet4U.com • •

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AMD

Am29F040 - 4 Megabit CMOS 5.0 Volt-only Sector Erase Flash Memory

FINAL Am29F040 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS s 5.0 V ± 10% for read and writ

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Fujitsu

MBM29F040A-90 - FLASH MEMORY 4M 512K x 8 BIT

FUJITSU SEMICONDUCTOR DATA SHEET FLASH MEMORY CMOS 4M (512K × 8) BIT MBM29F040A - 70/-90/-12 DS05–20810–3E s DISTINCTIVE CHARACTERISTICS • Single 5.

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Texas Instruments

TMS29F040 - FLASH MEMORIES

D Single Power Supply: 5 V ± 10% – 3.3 V ± 0.3 V – See TMS29LF040 / TMS29VF040 Data Sheet (Literature Number SMJS825) – 2.7 V to 3.6 V – See TMS29LF04

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Fujitsu