2N10L Datasheet | Specifications & PDF Download

Data Sheet RFP12N10L October 2013 N-Channel Logic Level Power MOSFET 100 V, 12 A, 200 mΩ These are N-Channel enhancement mode silicon gate power fie

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2N10L ·FEATURES ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage

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N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 11A, RDS(ON) = 175mΩ @VGS = 10V. RDS(ON) = 185mΩ @VGS = 5V. Super high dense cell de

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N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 11A, RDS(ON) = 175mΩ @VGS = 10V. RDS(ON) = 185mΩ @VGS = 5V. Super high dense cell de

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RFP2N08L, RFP2N10L Data Sheet July 1999 File Number 2872.2 2A, 80V and 100V, 1.050 Ohm, Logic Level, N-Channel Power MOSFETs The RFP2N08L and RFP2N10

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® STD12N10L N - CHANNEL 100V - 0.12 Ω - 12A TO-252 LOW THRESHOLD POWER MOS TRANSISTOR TYPE STD12N10L s s s s s s s V DSS 100 V R DS(o n) < 0.15 Ω

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Data Sheet RFP12N10L October 2013 N-Channel Logic Level Power MOSFET 100 V, 12 A, 200 mΩ These are N-Channel enhancement mode silicon gate power fie

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STN2N10L N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ADVANCE DATA TYPE STN2N10L s s s V DSS 100 V R DS(on) < 0.5 Ω I D CONT 2A s s s TYPIC

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HYG072N10LS1P Feature  100V/80A RDS(ON)= 6.7 mΩ(typ.) @ VGS = 10V RDS(ON)= 9.6mΩ(typ.) @ VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  L

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HYG072N10LS1C2 Single N-Channel Enhancement Mode MOSFET Feature  100V/80A RDS(ON)= 6.0 mΩ (typ.) @ VGS = 10V RDS(ON)= 8.8 mΩ (typ.) @ VGS = 4.5V 

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RFP12N10L Data Sheet July 1999 File Number 1512.3 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET These are N-Channel enhancement mode sili

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HYG072N10LS1S Feature  100V/14A RDS(ON)= 7.2 mΩ(typ.) @ VGS = 10V RDS(ON)= 10 mΩ(typ.) @ VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  H

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STH52N10LF3-2AG Automotive-grade N-channel 100 V, 15 mΩ typ., 52 A STripFET™ F3 Power MOSFET in H²PAK-2 package Datasheet - production data Figure 1

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