2N50-SE Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance

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FDP12N50 / FDPF12N50T — N-Channel UniFETTM MOSFET FDP12N50 / FDPF12N50T N-Channel UniFETTM MOSFET 500 V, 11.5 A, 650 mΩ Features • RDS(on) = 550 mΩ (

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 22N50 ·FEATURES ·Drain Current ID= 22A@ TC=25℃ ·Drain Source Voltag

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FQD2N50B / FQU2N50B May 2000 QFET FQD2N50B / FQU2N50B 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect

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TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/439 Devices 2N5038 2N5039 Qualified Level JAN JANTX JANTXV MAXIMUM RATIN

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FDB12N50TM — N-Channel UniFETTM MOSFET FDB12N50TM N-Channel UniFETTM MOSFET 500 V, 11.5 A, 650 m Features • RDS(on) = 550 m (Typ.) @ VGS = 10 V, ID

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AOW12N50/AOWF12N50 500V, 12A N-Channel MOSFET General Description The AOW12N50 & AOWF12N50 have been fabricated using an advanced high voltage MOSFET

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FDB12N50F — N-Channel UniFETTM FRFET® MOSFET FDB12N50F N-Channel UniFETTM FRFET® MOSFET 500 V, 11.5 A, 700 m Features • RDS(on) = 590 m (Typ.) @

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AOT12N50/AOB12N50/AOTF12N50 500V, 12A N-Channel MOSFET General Description Product Summary The AOT12N50 & AOB12N50 & AOTF12N50 have been fabricated

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( DataSheet : www.DataSheet4U.com ) www.DataSheet4U.com

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FDB12N50F N-Channel MOSFET November 2007 FDB12N50F N-Channel MOSFET, FRFET 500V, 11.5A, 0.7Ω Features • RDS(on) = 0.59Ω ( Typ.)@ VGS = 10V, ID = 6A

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FQP12N50/FQPF12N50 500V, 12A N-Channel MOSFET General Description Product Summary The FQP12N50 & FQPF12N50 have been fabricated using an advanced h

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FDB12N50U N-Channel MOSFET March 2008 FDB12N50U N-Channel MOSFET, FRFET 500V, 10A, 0.8Ω Features • RDS(on) = 0.65Ω ( Typ.)@ VGS = 10V, ID = 5A • Low

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AOT12N50/AOB12N50/AOTF12N50 500V, 12A N-Channel MOSFET General Description Product Summary The AOT12N50 & AOB12N50 & AOTF12N50 have been fabricated

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2N5088, 2N5089 Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com 3 COLLECTOR 2 BASE 1 EMITTER MAXIMUM

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R1112N SERIES LOW NOISE 150mA LDO REGULATOR NO.EA-059-130409 OUTLINE The R1112N Series are CMOS-based voltage regulator ICs with high output voltag

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2N5060 Series Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Annular PNPN devices designed for high volume consumer appl

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FQD2N50B / FQU2N50B May 2000 QFET FQD2N50B / FQU2N50B 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect

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2N5060 Series Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Annular PNPN devices designed for high volume consumer appl

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