2N50-SE Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 22N50 ·FEATURES ·Drain Current ID= 22A@ TC=25℃ ·Drain Source Voltag

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2N5060 Series Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Annular PNPN devices designed for high volume consumer appl

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2N5060 Series Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Annular PNPN devices designed for high volume consumer appl

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2N5087 Preferred Device Amplifier Transistor PNP Silicon Features • Pb−Free Packages are Available* http://onsemi.com 3 COLLECTOR MAXIMUM RATINGS

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TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/439 Devices 2N5038 2N5039 Qualified Level JAN JANTX JANTXV MAXIMUM RATIN

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FDP12N50 / FDPF12N50T N-Channel MOSFET May 2012 FDP12N50 / FDPF12N50T N-Channel MOSFET 500V, 11.5A, 0.65Ω Features • RDS(on) = 0.55Ω (Typ.)@ VGS = 1

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FDP12N50 / FDPF12N50T — N-Channel UniFETTM MOSFET FDP12N50 / FDPF12N50T N-Channel UniFETTM MOSFET 500 V, 11.5 A, 650 mΩ Features • RDS(on) = 550 mΩ (

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2N5086/2N5087/MMBT5087 2N5086/2N5087/MMBT5087 PNP General Purpose Amplifier • This device is designed for low level, high gain, low noise general pur

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FDP12N50 / FDPF12N50T — N-Channel UniFETTM MOSFET FDP12N50 / FDPF12N50T N-Channel UniFETTM MOSFET 500 V, 11.5 A, 650 mΩ Features • RDS(on) = 550 mΩ (

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145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

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145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5038 2N5039 DESCRIPTION ¡¤With TO-3 package ¡¤High speed ¡¤Low collec

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2N5060 Series Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Annular PNPN devices designed for high volume consumer appl

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2N5086/2N5087/MMBT5087 2N5086/2N5087/MMBT5087 PNP General Purpose Amplifier • This device is designed for low level, high gain, low noise general pur

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TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/439 Devices 2N5038 2N5039 Qualified Level JAN JANTX JANTXV MAXIMUM RATIN

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FDP12N50F / FDPF12N50FT N-Channel MOSFET December 2007 UniFETTM FDP12N50F / FDPF12N50FT N-Channel MOSFET 500V, 11.5A, 0.7Ω Features • RDS(on) = 0.59

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2NS022 2N5023 CASE 079-02, STYLE 1 TO-39 (TO-205AD) GENERAL PURPOSE TRANSISTOR PNP SILICON Refer to 2N3467 for graphs. MAXIMUM RATINGS Rating Collect

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2N5086 / 2N5087 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group accor

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FDP22N50N — N-Channel UniFETTM II MOSFET FDP22N50N N-Channel UniFETTM II MOSFET 500 V, 22 A, 220 mΩ Features • RDS(on) = 185 mΩ (Typ.) @ VGS = 10 V,

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