2N 178 (GERMANIUM) 2N554 2N555 ~ PNP germanium .
Motorola
2N5551 - Amplifier Transistors
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5550/D Amplifier Transistors NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RAT.
SEMTECH ELECTRONICS
ST2N5551 - NPN Silicon Epitaxial Planar Transistor
ST 2N5550 / 2N5551 NPN Silicon Epitaxial Planar Transistors www.DataSheet4U.com for general purpose, high voltage amplifier applications. As compleme.
SeCoS
2N5551 - NPN Transistor
Elektronische Bauelemente 2N5551 600mA, 160V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen and lead .
Motorola
2N5550 - Amplifier Transistors
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5550/D Amplifier Transistors NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RAT.
Inchange Semiconductor
2N5551 - Silicon NPN Power Transistor
INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·NPN high-voltage transistor ·Low current (max. 300 mA) ·High voltage (max. 160 V).
CENTRAL SEMICONDUCTOR
2N5550 - SILICON NPN TRANSISTORS
2N5550 2N5551 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5550 and 2N5551 are silicon NPN t.
Multicomp
2N5551 - Bipolar Transistor
Bipolar Transistor Collector 3 2 Base 1 Emitter Maximum Ratings: Characteristic Collector - Base Voltage Collector - Emitter Voltage Emitter - Base.
KEC
2N5551C - EPITAXIAL PLANAR NPN TRANSISTOR
SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V L.
KEC
2N5551 - NPN TRANSISTOR
SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V L.
ON Semiconductor
2N5550 - Amplifier Transistor
2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features • These are Pb−Free Devices* MAXIMUM RATINGS Rating Collector − Emitter V.
Fairchild Semiconductor
2N5551 - NPN General Purpose Amplifier
2N5551 / MMBT5551 — NPN General-Purpose Amplifier August 2018 2N5551 / MMBT5551 NPN General-Purpose Amplifier Description This device is designed for.
Motorola
P2N5551 - AMPLIFIER TRANSISTORS
T P2N5550 P2N5551 CASE 29-02, STYLE 17 TO-92 (TO-226AA) AMPLIFIER TRANSISTORS NPN SILICON Refer to 2N5550 for graphs. MAXIMUM RATINGS Rating Symbo.
Hi-Sincerity Mocroelectronics
H2N5551 - NPN EPITAXIAL PLANAR TRANSISTOR
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6219 Issued Date : 1992.09.21 Revised Date : 2004.12.28 Page No. : 1/5 H2N5551 NPN EPITAXIAL PLANA.
ON Semiconductor
2N5551 - NPN Amplifier
NPN General-Purpose Amplifier 2N5551 Description This device is designed for general−purpose high−voltage amplifiers and gas discharge display driver.
ON Semiconductor
2N5555 - Switching JFET
ON Semiconductort JFET Switching N–Channel — Depletion 3 GATE 1 DRAIN 2N5555 MAXIMUM RATINGS Rating Drain–Source Voltage Drain–Gate Voltage Gate–.
Central Semiconductor
2N5555 - N-CHANEL FET
Central TM Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 www.centralsemi.com .
KEC
2N5551SC - EPITAXIAL PLANAR NPN TRANSISTOR
SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V L.
KEC
2N5551S - EPITAXIAL PLANAR NPN TRANSISTOR
SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V L.
Philips
2N5551 - NPN high-voltage transistors
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5550; 2N5551 NPN high-voltage transistors Product specification Supersedes data of 1999 Ap.
CENTRAL SEMICONDUCTOR
2N5551 - SILICON NPN TRANSISTORS
2N5550 2N5551 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5550 and 2N5551 are silicon NPN t.
