2N555 Datasheet | Specifications & PDF Download

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5550/D Amplifier Transistors NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RAT

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2N 178 (GERMANIUM) 2N554 2N555 ~ PNP germanium power transistor for non-critical power amplifier and power switching applications re- CASE 11 (TO-

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2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features • These are Pb−Free Devices* MAXIMUM RATINGS Rating Collector − Emitter V

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2N5550 & 2N5551 Silicon NPN Transistor Audio Power Amplifier TO−92 Type Package Description: The 2N5550 and 2N5551 is a silicon NPN amplifier transis

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5550/D Amplifier Transistors NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RAT

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Elektronische Bauelemente 2N5550 0.6 A, 160 V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-f

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INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·NPN high-voltage transistor ·Low current (max. 300 mA) ·High voltage (max. 160 V)

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2N5550 2N5551 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5550 and 2N5551 are silicon NPN t

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5550; 2N5551 NPN high-voltage transistors Product specification Supersedes data of 1999 Ap

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SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V L

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NPN General-Purpose Amplifier 2N5551 Description This device is designed for general−purpose high−voltage amplifiers and gas discharge display driver

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ST 2N5550 / 2N5551 NPN Silicon Epitaxial Planar Transistors www.DataSheet4U.com for general purpose, high voltage amplifier applications. As compleme

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T P2N5550 P2N5551 CASE 29-02, STYLE 17 TO-92 (TO-226AA) AMPLIFIER TRANSISTORS NPN SILICON Refer to 2N5550 for graphs. MAXIMUM RATINGS Rating Symbo

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2N5550 2N5551 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5550 and 2N5551 are silicon NPN t

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Elektronische Bauelemente 2N5551 600mA, 160V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen and lead

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2N5551 / MMBT5551 — NPN General-Purpose Amplifier March March 20188 2N5551 / MMBT5551 NPN General-Purpose Amplifier Description This device is desig

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2N5551 / MMBT5551 — NPN General-Purpose Amplifier August 2018 2N5551 / MMBT5551 NPN General-Purpose Amplifier Description This device is designed for

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6219 Issued Date : 1992.09.21 Revised Date : 2004.12.28 Page No. : 1/5 H2N5551 NPN EPITAXIAL PLANA

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Bipolar Transistor Collector 3 2 Base 1 Emitter Maximum Ratings: Characteristic Collector - Base Voltage Collector - Emitter Voltage Emitter - Base

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