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2N555

2N555 dataSheet

Motorola

2N5551 - Amplifier Transistors

 · 118 Hits = 0 ) 2N5550 2N5551 Emitter – Base Breakdown Voltage (IE = 10 µAdc, IC = 0) Collector Cutoff Current (VCB = 100 Vdc, IE = 0) (VCB = 120 Vdc, IE = 0...
ON Semiconductor

2N5551 - NPN Amplifier

 · 42 Hits • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (Note 1) Symbol Parameter Value Unit VCEO Col...
Fairchild Semiconductor

2N5551 - NPN General Purpose Amplifier

 · 29 Hits operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise not...
KEC

2N5551 - NPN TRANSISTOR

 · 23 Hits High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V Low Leakage Current. : ICBO=50nA(Max.), VCB=120V Low Saturation Voltage : VCE(sat)=0.2V(Max.),...
KEC

2N5551S - EPITAXIAL PLANAR NPN TRANSISTOR

 · 18 Hits High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V Low Leakage Current. : ICBO=50nA(Max.) VCB=120V Low Saturation Voltage : VCE(sat)=0.2V(Max.) I...
Hi-Sincerity Mocroelectronics

H2N5551 - NPN EPITAXIAL PLANAR TRANSISTOR

 · 16 Hits • Complements to PNP Type H2N5401 • High Collector-Emitter Breakdown Voltage (VCEO>160V (@IC=1mA)) TO-92 Absolute Maximum Ratings • Maximum Temperat...
ETC

2N5557 - SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS

 · 14 Hits d notes apply CASE 20.03 TO·72 2N5556 thru 2N5558 (continued) ELECTRICAL CHARACTERISTICS (TA = 25'C unle55 otherwISe noted) Characteristic OFF CHAR...
UTC

2N5551 - HIGH VOLTAGE SWITCHING TRANSISTOR

 · 14 Hits * High collector-emitter voltage: VCEO=160V * High current gain  APPLICATIONS * Telephone switching circuit * Amplifier  ORDERING INFORMATION Orde...
SEMTECH ELECTRONICS

ST2N5551 - NPN Silicon Epitaxial Planar Transistor

 · 14 Hits ST 2N5550 / 2N5551 Characteristics at Tamb = 25 OC Parameter DC Current Gain at VCE = 5 V, IC = 1 mA at VCE = 5 V, IC = 10 mA at VCE = 5 V, IC = 50 mA...
KEC

2N5551SC - EPITAXIAL PLANAR NPN TRANSISTOR

 · 13 Hits High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V Low Leakage Current. : ICBO=50nA(Max.) VCB=120V Low Saturation Voltage : VCE(sat)=0.2V(Max.) I...
CENTRAL SEMICONDUCTOR

2N5551 - SILICON NPN TRANSISTORS

 · 13 Hits 0V - - 50 - - 50 BVCBO BVCEO IC=100μA IC=1.0mA 160 - - 180 - 140 - - 160 - - BVEBO IE=10μA 6.0 - - 6.0 - - VCE(SAT) IC=10mA, IB=1.0mA -...
Multicomp

2N5551 - Bipolar Transistor

 · 12 Hits reakdown Voltage V(BR)CBO V(BR)CEO V(BR)EBO Collector Cut - Off Current ICBO Emitter Cut - Off Voltage IEBO ON Characteristics (Note 2) lC = 10...
Motorola

P2N5551 - AMPLIFIER TRANSISTORS

 · 12 Hits ...
Inchange Semiconductor

2N5551 - Silicon NPN Power Transistor

 · 11 Hits tor-Emitter Saturation Voltage IC= 10mA; IB= 1mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 50mA; IB= 5mA VBE(sat)-1 Base-Emitter Saturatio...
ON Semiconductor

2N5551TA - NPN Amplifier

 · 11 Hits on or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposur...
ON Semiconductor

2N5550 - Amplifier Transistor

 · 10 Hits • These are Pb−Free Devices* MAXIMUM RATINGS Rating Collector − Emitter Voltage Symbol 2N5550 2N5551 VCEO Value 140 160 Unit Vdc Collector − B...
KEC

2N5550 - EPITAXIAL PLANAR NPN TRANSISTOR

 · 10 Hits ...
CENTRAL SEMICONDUCTOR

2N5550 - SILICON NPN TRANSISTORS

 · 10 Hits 0V - - 50 - - 50 BVCBO BVCEO IC=100μA IC=1.0mA 160 - - 180 - 140 - - 160 - - BVEBO IE=10μA 6.0 - - 6.0 - - VCE(SAT) IC=10mA, IB=1.0mA -...
Motorola

2N5550 - Amplifier Transistors

 · 9 Hits = 0 ) 2N5550 2N5551 Emitter – Base Breakdown Voltage (IE = 10 µAdc, IC = 0) Collector Cutoff Current (VCB = 100 Vdc, IE = 0) (VCB = 120 Vdc, IE = 0...
Motorola

2N555 - PNP germanium power transistors

 · 9 Hits limits below which the device will not go into secondary breakdown. Collector load lines for specific circuits must fall within the applicable Safe A...
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