2N60D Datasheet | Specifications & PDF Download

STWA72N60DM6AG Datasheet Automotive-grade N-channel 600 V, 37 mΩ typ., 56 A, MDmesh DM6 Power MOSFET in a TO‑247 long leads package TO-247 long leads

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2N60(F,B,H,G,D) 2A mps,600 Volts N-CHANNEL MOSFET FEATURE  2A,600V,RDS(ON)=4Ω@VGS=10V/1A  Low gate charge  Low Ciss  Fast switching  100% avala

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Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF2N60D ●： RoHS ■ ●FEATURES：■LOW ON-RESISTANCE ■FA

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STD12N60DM2AG Datasheet Automotive-grade N-channel 600 V, 380 mΩ typ., 10 A MDmesh DM2 Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) G(1)

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R SEMICONDUCTOR 2N60 600V N-Channel Power MOSFET FEATURES ● RDS(ON)<4.4Ω @ VGS=10V,ID=1A ● Fast switching capability ● Lead free in compliance with

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2A, 600V, N H FQU2N60C FQD2N60C H2N60U H2N60D 2N60 HAOHAI U: TO-251 D: TO-252 80/ 2.5K/ 2N60 Series N-Channel MOSFET 4Kpcs/ 5K

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Main Product Characteristics VDSS RDS(on) ID 600V 3.7Ω (typ.) 2A TO-252 Features and Benefits  Advanced MOSFET process technology  Special desig

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STW72N60DM6AG Datasheet Automotive-grade N-channel 600 V, 37 mΩ typ., 56 A, MDmesh DM6 Power MOSFET in a TO‑247 package 3 2 1 TO-247 D(2, TAB) G(1)

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STW72N60DM2AG Automotive-grade N-channel 600 V, 0.037 Ω typ., 66 A MDmesh™ DM2 Power MOSFET in a TO-247 package Datasheet - production data Features

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STB12N60DM2AG Datasheet Automotive-grade N-channel 600 V, 380 mΩ typ., 10 A MDmesh DM2 Power MOSFET in a D²PAK package TAB 2 3 1 D²PAK D(2, TAB) G(1

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STO52N60DM6 Datasheet N‑channel 600 V, 68 mΩ typ., 45 A, MDmesh DM6 Power MOSFET in a TO‑LL package TO-LL type A2 Drain (TAB) Gate(1) Driver source

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SAMWIN SW2N60D N-channel I-PAK/D-PAK/TO220F MOSFET Features TO-251 TO-252 TO-220F ■ High ruggedness ■ RDS(ON) (Max 4.5Ω)@VGS=10V ■ Gate Charge

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SEMICONDUCTOR TECHNICAL DATA KF2N60D/I N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristic

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STWA72N60DM6AG Datasheet Automotive-grade N-channel 600 V, 37 mΩ typ., 56 A, MDmesh DM6 Power MOSFET in a TO‑247 long leads package TO-247 long leads

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HGTP12N60D1 April 1995 12A, 600V N-Channel IGBT Package JEDEC TO-220AB EMITTER COLLECTOR GATE COLLECTOR (FLANGE) Features • 12A, 600V • Latch Free O

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CMD2N60D/CMU2N60D General Description 600V N-Channel MOSFET Product Summery The 2N60D have been fabricated using an advanced high voltage MOSFET pr

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HGTP12N60D1 April 1995 12A, 600V N-Channel IGBT Package JEDEC TO-220AB EMITTER COLLECTOR GATE COLLECTOR (FLANGE) Features • 12A, 600V • Latch Free O

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Silan Microelectronics SVF2N60M/MJ/NF/F/D_Datasheet 2A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION 2 SVF2N60M(MJ)(NF)(F)(D) is an N-channel enhanc

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STW72N60DM2AG Automotive N-channel 600 V, 0.037 Ω typ., 68 A MDmesh™ DM2 Power MOSFET in a TO-247 package Datasheet - production data 3 2 1 TO-247 F

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Silan Microelectronics SVF2N60M/MJ/NF/F/D_Datasheet 2A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION 2 SVF2N60M(MJ)(NF)(F)(D) is an N-channel enhanc

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