2N60F Datasheet | Specifications & PDF Download

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor JCS2N60F ·FEATURES ·Low gate charge ·High speed switching ·Low on-resistance ·100% avalanche

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SCT12N60FD Triac 600V, 12A STANDARD TRIAC This device is suitable for low power AC switching application, phase control application such as fan spee

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isc N-Channel MOSFET Transistor AOB12N60FD FEATURES ·Drain Current –ID=12A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-R

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AOT12N60FD/AOB12N60FD/AOTF12N60FD 600V, 12A N-Channel MOSFET General Description Product Summary The AOT12N60FD/AOB12N60FD/AOTF12N60FD have been fa

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isc N-Channel MOSFET Transistor AOT12N60FD FEATURES ·Drain Current –ID=12A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-R

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isc N-Channel MOSFET Transistor AOTF12N60FD FEATURES ·Drain Current –ID=12A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 600V D RDSON (MAX.) 5.5Ω ID 2A G UIS, 100% Tested S

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Silan Microelectronics SVF2N60M/MJ/NF/F/D_Datasheet 2A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION 2 SVF2N60M(MJ)(NF)(F)(D) is an N-channel enhanc

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CS2N60(F) CS2N60(F) VDMOS 1. CS2N60(F) N 600V VDMOS ，、 。 ： ● ● ● ● ： CS2N60 CS2N60F TO-220 TO-220F VDSS 600V RDS(ON)MAX 4.6Ω ID 2.1A 2.

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FCH072N60F — N-Channel SuperFET® II FRFET® MOSFET FCH072N60F N-Channel SuperFET® II FRFET® MOSFET 600 V, 52 A, 72 mΩ December 2014 Features • 650 V

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Main Product Characteristics: VDSS 600V RDS(on) 3.6ohm(typ.) ID 2A Features and Benefits: TO220F  Advanced MOSFET process technology  Special

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Main Product Characteristics: VDSS RDS(on) 600V 0.55Ω (typ.) ID 12A Features and Benefits:  Advanced Process Technology  Special designed for PW

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600V N-Channel MOSFET GENERAL DESCRIPTION This Power MOSFET is produced using advanced planar stripe DMOS technology.This advanced technology has been

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AOT12N60FD/AOB12N60FD/AOTF12N60FD 600V, 12A N-Channel MOSFET General Description Product Summary The AOT12N60FD/AOB12N60FD/AOTF12N60FD have been fa

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AOT12N60FD/AOB12N60FD/AOTF12N60FD 600V, 12A N-Channel MOSFET General Description Product Summary The AOT12N60FD/AOB12N60FD/AOTF12N60FD have been fa

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R JCS2N60FC(K1) JCS2N60FC(K1) MAIN CHARACTERISTICS ID VDSS Rdson-max （Vgs=10V） Qg-typ 2.0 A 600 V 5.0 Ω 8.1 nC Package    LED APPLICA

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2 Amps, 600 Volts N-CHANNEL MOSFET FEATURES  RDS(on)=3.8Ω@VGS=10V. Pb  Ultra Low gate charge (typical 9.0nC) Lead-free  Low reverse transfer c

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 600V D RDSON (MAX.) 0.75Ω ID 12A G UIS, 100% Tested S

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12N60(F,B,H) 12A mps,600 Volts N-CHANNEL MOSFET FEATURE  12A,600V,RDS(ON)=0.7Ω@VGS=10V/6A  Low gate charge  Low Ciss  Fast switching  100% ava

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SVF2N60M/MG/MJ/N/NF/F/FG/T/D_Datasheet 2A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF2N60M/MG/MJ/N/NF/F/FG/T/D is an N-channel enhancement mode pow

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