2N60(F,B,H,G,D) 2A mps,600 Volts N-CHANNEL MOSFET.
SVD12N60F - 600V N-CHANNEL MOSFET
SVD12N60T/F_Datasheet 12A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD12N60T/F is an N-channel enhancement mode power MOS field effect transistor wh.JCS2N60F - N-CHANNEL MOSFET
N R N-CHANNEL MOSFET JCS2N60 MAIN CHARACTERISTICS ID 2.0 A VDSS 600 V Rdson(@Vgs=10V) 5 Ω Qg 15.3 nC Package LED APPLICATIONS High .CS12N60FA9H - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET ○R CS12N60F A9H General Description: CS12N60F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self.H12N60FI - STH12N60FI
www.DataSheet4U.com DataSheet4U.com DataShee DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com et4U.com DataSheet4U.com DataShee DataShe.SVF12N60F - 600V N-CHANNEL MOSFET
SVF12N60T/F/FG/S/K_Datasheet 12A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF12N60T/F/FG/S/K is an N-channel enhancement mode power MOS field effect.FCH072N60F - N-Channel MOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-.JCS2N60F - N-Channel MOSFET
Isc N-Channel MOSFET Transistor INCHANGE Semiconductor JCS2N60F ·FEATURES ·Low gate charge ·High speed switching ·Low on-resistance ·100% avalanche .AOB12N60FD - N-Channel MOSFET
isc N-Channel MOSFET Transistor AOB12N60FD FEATURES ·Drain Current –ID=12A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-R.AOT12N60FD - N-Channel MOSFET
isc N-Channel MOSFET Transistor AOT12N60FD FEATURES ·Drain Current –ID=12A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-R.2N60F - 600V N-Channel Power MOSFET
R SEMICONDUCTOR 2N60 600V N-Channel Power MOSFET FEATURES ● RDS(ON)<4.4Ω @ VGS=10V,ID=1A ● Fast switching capability ● Lead free in compliance with .EMD02N60F - MOSFET
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 600V D RDSON (MAX.) 5.5Ω ID 2A G UIS, 100% Tested S .EMD12N60F - N-Channel Logic Level Enhancement Mode Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 600V D RDSON (MAX.) 0.75Ω ID 12A G UIS, 100% Tested S.12N60F - N-CHANNEL MOSFET
12N60(F,B,H) 12A mps,600 Volts N-CHANNEL MOSFET FEATURE 12A,600V,RDS(ON)=0.7Ω@VGS=10V/6A Low gate charge Low Ciss Fast switching 100% ava.SVF2N60FG - 600V N-CHANNEL MOSFET
SVF2N60M/MG/MJ/N/NF/F/FG/T/D_Datasheet 2A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF2N60M/MG/MJ/N/NF/F/FG/T/D is an N-channel enhancement mode pow.CS2N60FA9H - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET CS2N60F A9H ○R General Description: VDSS 600 V CS2N60F A9H, the silicon N-channel Enhanced ID 2A VDMOSFETs, is o.CS12N60FA9HD - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET CS12N60F A9HD ○R General Description: CS12N60F A9HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the sel.CS12N60FA9R - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET CS12N60F A9R ○R General Description: CS12N60F A9R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the sel.STP2N60FI - N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
www.DataSheet4U.com STP2N60 STP2N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP2N60 STP2N60FI s s s s s V DSS 600 V 600 V R DS( on.SVF2N60F - 600V N-CHANNEL MOSFET
Silan Microelectronics SVF2N60M/MJ/NF/F/D_Datasheet 2A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION 2 SVF2N60M(MJ)(NF)(F)(D) is an N-channel enhanc.CS2N60F - VDMOS Transistor
CS2N60(F) CS2N60(F) VDMOS 1. CS2N60(F) N 600V VDMOS ,、 。 : ● ● ● ● : CS2N60 CS2N60F TO-220 TO-220F VDSS 600V RDS(ON)MAX 4.6Ω ID 2.1A 2. .