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2SA Matched Datasheet



Part Number Description Manufacture
A1930
2SA1930
opriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2007-06-15 ht
Manufacture
Toshiba Semiconductor
A1941
2SA1941
sat Collector-emitter saturation voltage IC=-7 A;IB=-0.7A VBE ICBO IEBO hFE-1 Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain IC=-5A ; VCE=-5V VCB=-140V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V hFE-2 DC current
Manufacture
SavantIC
A940
2SA940
Manufacture
Mospec Semiconductor
A1943
2SA1943
e within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability t
Manufacture
Toshiba
2SA1668
(2SA1667 / 2SA1668) SILICON POWER TRANSISTOR
-200V;IE=0 VEB=-6V; IC=0 IC=-0.7A ; VCE=-10V IC=-0.2A ; VCE=-12V IE=0 ; VCB=10V;f=1MHz CONDITIONS 2SA1667 2SA1668 SYMBOL MIN -150 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V -200 -1.0 -10 -10 -10 60 20 60 MHz pF V µA µA µA
Manufacture
SavantIC
A1013
2SA1013
* High BVCEO * High DC current gain * Large continuous collector current capability
 ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SA1013L-x-AB3-R 2SA1013G-x-AB3-R 2SA1013L-x-T92-B 2SA1013G-x-T92-B 2SA1013L-x-T92-K 2SA1013G-
Manufacture
UTC
2SA1302
Silicon PNP Transistor

• Complementary to 2SC3281
• Recommended for 100W High Fidelity Audio Frequency - Amplifier Output Stage Absolute Maximum Ratings (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage C
Manufacture
Toshiba
A614
2SA614
UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 -55 V V(BR)CBO Collector-Base Breakdown Voltage IC= -500μA; IE= 0 -80 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -500μA; IC= 0 -5 V VCE(sat) Collector-Emitter Satu
Manufacture
INCHANGE
A1837
2SA1837
EB = −5 V, IC = 0 IC = −10 mA, IB = 0 VCE = −5 V, IC = −100 mA IC = −500 mA, IB = −50 mA VCE = −5 V, IC = −500 mA VCE = −10 V, IC = −100 mA VCB = −10 V, IC = 0, f = 1 MHz Min Typ. Max Unit ― ― −1.0 µA ― ― −1.0 µA −230 ― ― V 100 ― 320 ― ― −1.
Manufacture
Toshiba Semiconductor
2SA1943
Silicon PNP Transistor
e within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability t
Manufacture
Toshiba Semiconductor

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