2SC535 Datasheet | Specifications & PDF Download

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5354 High-Speed and High-Voltage Switching Applications Switching Regulator Applications High-S

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TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC5356 2SC5356 High Voltage Switching Applications Switching Regulator Applicatio

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2SC5352 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5352 Switching Regulator and High-Voltage Switching Applications High-Speed DC-DC Conv

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2SC5355 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5355 High Voltage Switching Applications Switching Regulator Applications DC-DC C

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2SC535 Silicon NPN Epitaxial Planar Application VHF amplifier, mixer, local oscillator Outline RENESAS Package code: PRSS0003DA-C (Package name: TO

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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5359 Power Amplifier Applications 2SC5359 Unit: mm • High breakdown voltage: VCEO = 230 V • C

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2SC5353 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC5353 Switching Regulator and High Voltage Switching Applications High-Sp

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2SC535 Silicon NPN Epitaxial Planar Application VHF amplifier, mixer, local oscillator Outline TO-92 (2) 1. Emitter 2. Collector 3. Base 3 2 1 2SC

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5353 DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 800V(Min.) ·Low Coll

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UNISONIC TECHNOLOGIES CO., LTD 2SC5353 NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR 1 TO-126 1 TO-126C  DESCRIPTION Switching Regulator a

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2SC535 Silicon NPN Epitaxial Planar REJ03G0683-0200 (Previous ADE-208-1047) Rev.2.00 Aug.10.2005 Application VHF amplifier, mixer, local oscillator

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5359 DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter

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2SC5354 NPN Plastic-Encapsulate Transistor P b Lead(Pb)-Free FEATURES * Excellent hFE Linearity * Low Noise 1. BASE 2. EMITTER 3. COLLECTOR 3 1 2 MAX

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isc Silicon NPN Power Transistor 2SC5352 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·Minimum

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UNISONIC TECHNOLOGIES CO., LTD 2SC5353B NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR 1 TO-126 1 TO-126C  DESCRIPTION Switching Regulator

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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5352 Switching Regulator and High-Voltage Switching Applications High-Speed DC-DC Converter App

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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5359 Power Amplifier Applications 2SC5359 Unit: mm • High breakdown voltage: VCEO = 230 V • C

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2SC5355 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5355 High Voltage Switching Applications Switching Regulator Applications DC-DC C

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TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC5356 2SC5356 High Voltage Switching Applications Switching Regulator Applicatio

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