2SD157 Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD157 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·Low Collecto

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1572 DESCRIPTION · High DC Current Gain- : hFE = 1000(Min)@ IC= 4A ·Collector

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isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1300V (Min) ·High Switching Speed ·High Reliability ·Wide Area of Safe

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www.DataSheet4U.com 2SD1577 GENERAL DESCRIPTION Silicon Diffused Power Transistor Highvoltage,high-speed switching npn transistors in a plastic env

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isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1200V (Min) ·High Switching Speed ·High Reliability ·Wide Area of Safe

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1577 www.datasheet4u.com DESCRIPTION ·With TO-3PFa package ·Wide ar

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isc Silicon NPN Power Transistor 2SD1576 DESCRIPTION ·High Collector-Base Breakdown Voltage- : V(BR)CBO= 1300V (Min.) ·High Switching Speed ·Wide Ar

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isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Base Breakdown Voltage- : V(BR)CBO= 800V (Min) ·High Switching Speed ·Low Collector Satu

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1571 www.datasheet4u.com DESCRIPTION ·With TO-220Fa package ·Low co

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