2SD2114K High-current Gain Medium Power Transistor.
Leshan Radio Company
L2SD2114KVLT1G - Epitaxial planar type NPN silicon transistor
LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base vo.
Leshan Radio Company
L2SD2114KWLT1 - Epitaxial planar type NPN silicon transistor
LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base vo.
Rohm
2SD2114K - High-current Gain Medium Power Transistor
2SD2114K High-current Gain Medium Power Transistor (20V, 500mA) Parameter VCEO IC Value 20V 0.5A lFeatures 1)High DC current gain 2)High emitter-ba.
Leshan Radio Company
L2SD2114KVLT1 - Epitaxial planar type NPN silicon transistor
LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base vo.
Leshan Radio Company
L2SD2114KWLT1G - Epitaxial planar type NPN silicon transistor
LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base vo.
Leshan Radio Company
L2SD2114KVLT3G - NPN silicon transistor
Epitaxial planar type LESHAN RADIO COMPANY, LTD. NPN silicon transistor L2SD2114KVLT1G Series zFeatures 1) High DC current gain. S-L2SD2114KVLT1G.
Kexin
2SD2114K - Power Transistor
SMD Type TransistIoCrs Power Transistor 2SD2114K Features High DC current gain. High emitter-base voltage. Low VCE (sat). +0.12.4 -0.1 SOT-23 2.9.
Leshan Radio Company
L2SD2114KWLT3G - NPN silicon transistor
Epitaxial planar type LESHAN RADIO COMPANY, LTD. NPN silicon transistor L2SD2114KVLT1G Series zFeatures 1) High DC current gain. S-L2SD2114KVLT1G.