2SD60 Datasheet | Specifications & PDF Download

Ordering number:346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Fe

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD600 2SD600K www.datasheet4u.com DESCRIPTION ·With TO-126 package ·C

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Ordering number:346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Fe

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD600 2SD600K www.datasheet4u.com DESCRIPTION ·With TO-126 package ·C

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Elektronische Bauelemente 2SD602 / 2SD602A NPN Plastic-Encapsulate Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

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2SD602(A) Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-23 NPN 。Silicon NPN transistor in a SOT-23 Plastic Package.  / Features 2SB710(A)。 C

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Elektronische Bauelemente 2SD602 / 2SD602A NPN Plastic-Encapsulate Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

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RoHS 2SD601LT1 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER,LOW LEVEL&LOW NOISE * Complement to S9015LT1 * Collector Current: Ic= 100mA D* Collect

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isc Silicon NPN Power Transistor DESCRIPTION ·High Collector Current-IC= 1.0A ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Good

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Transistor 2SD602, 2SD602A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB710 and 2SB710A Unit: mm s Features q q

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Ordering number : ENN346G 2SB631, 631K/ 2SD600, 600K PNP/NPN Epitaxial Planar Silicon Transistors 100V/120V, 1A Low-Frequency Power Amplifier Applic

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Elektronische Bauelemente 2SD601A 0.1A , 60V NPN Plastic-Encapsulate Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-fre

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SMD Type NPN Transistors 2SD602A-HF Transistors ■ Features ● Low Collector to Emitter Saturation Voltage ● Mini Type Package ● Complimentary to 2SB

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isc Silicon NPN Power Transistor 2SD608 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·Complement to Type 2SB628 ·Minimum

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RoHS 2SD602LT1 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR * Complement to MMBT2907ALT1 * Collector Dissipation: Pc(max)=225mW * Co

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2SD600K Rev.E Mar.-2016 DATA SHEET / Descriptions TO-126F NPN 。Silicon NPN transistor in a TO-126F Plastic Package.  / Features VCEO ,，，， 2SB6

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Transistor 2SD602, 2SD602A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB710 and 2SB710A Unit: mm s Features q q

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Production specification Silicon Epitaxial Planar Transistor FEATURES Pb z Mini type package. Lead-free z Complementary to 2SB709A PNP Transisto

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Transistor 2SD601A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB709A 2.8 –0.3 +0.2 Unit: mm s Features q q q 0.

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