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Toshiba Semiconductor
2SK1830 - N-Channel MOSFET
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1830 High Speed Switching Applications Analog Switch Applications • 2.5 V gate drive • .
Yoshino International
2SK182 - (2SK180 - 2SK183) Power FET
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Toshiba
K1830 - 2SK1830
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1830 High Speed Switching Applications Analog Switch Applications • 2.5 V gate drive • .
Yoshino International
2SK181 - (2SK180 - 2SK183) Power FET
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Yoshino International
2SK183 - (2SK180 - 2SK183) Power FET
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Hitachi Semiconductor
2SK1838 - Silicon N-Channel MOSFET
2SK1838(L), 2SK1838(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Lo.
Hitachi Semiconductor
2SK1838L - Silicon N-Channel MOSFET
2SK1838(L), 2SK1838(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Lo.
Hitachi Semiconductor
2SK1838S - Silicon N-Channel MOSFET
2SK1838(L), 2SK1838(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Lo.
Inchange Semiconductor
2SK1833 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID= 2.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Fast Switching Speed ·Minimum Lo.
Hitachi Semiconductor
K1835 - 2SK1835
2SK1835 Silicon N-Channel MOS FET Application www.DataSheet4U.com High speed power switching Features • • • • • High breakdown voltage (VDSS = 1500.
Panasonic
K1833 - 2SK1833
Power F-MOS FETs 2SK1833 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 90mJ q VGSS = ±30V guaranteed q Hi.
Hitachi Semiconductor
2SK1831 - Silicon N-Channel MOSFET
2SK1831, 2SK1832 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low driv.
Hitachi Semiconductor
2SK1832 - Silicon N-Channel MOSFET
2SK1831, 2SK1832 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low driv.
Hitachi Semiconductor
2SK1835 - Silicon N-Channel MOSFET
2SK1835 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • High breakdown voltage (VDSS = 1500V) High speed switchi.
Hitachi Semiconductor
2SK1836 - Silicon N-Channel MOSFET
2SK1836, 2SK1837 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low driv.
Hitachi Semiconductor
2SK1837 - Silicon N-Channel MOSFET
2SK1836, 2SK1837 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low driv.
Sanyo Semicon Device
2SK1839 - N-Channel Enhancement Silicon MOSFET
Ordering number:EN4634 N-Channel Enhancement Silicon MOSFET 2SK1839 Analog Switch Applications Features · Ultrasmall-sized package permitting 2SK183.
Inchange Semiconductor
2SK1834 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage : VDSS=800V(Min) ·Fast Switching Speed ·Minimum Lot-t.
Sanyo
K1839 - 2SK1839
Ordering number:EN4634 N-Channel Enhancement Silicon MOSFET 2SK1839 Analog Switch Applications Features · Ultrasmall-sized package permitting 2SK183.
Panasonic
2SK1833 - Silicon N-Channel MOSFET
Power F-MOS FETs 2SK1833 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 90mJ q VGSS = ±30V guaranteed q Hi.
