2SK183 Datasheet | Specifications & PDF Download

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2SK1836, 2SK1837 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low driv

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2SK1835 Silicon N-Channel MOS FET Application www.DataSheet4U.com High speed power switching Features • • • • • High breakdown voltage (VDSS = 1500

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2SK1838(L), 2SK1838(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Lo

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2SK1838(L), 2SK1838(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Lo

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID= 2.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Fast Switching Speed ·Minimum Lo

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor 2SK1837 ·FEATURES ·With TO-3PL package ·Low input capacitance and gate charge ·High speed swi

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2SK1831, 2SK1832 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low driv

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2SK1831, 2SK1832 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low driv

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage : VDSS=800V(Min) ·Fast Switching Speed ·Minimum Lot-t

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2SK1835 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • High breakdown voltage (VDSS = 1500V) High speed switchi

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Power F-MOS FETs 2SK1833 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 90mJ q VGSS = ±30V guaranteed q Hi

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2SK1836, 2SK1837 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low driv

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2SK1838(L), 2SK1838(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Lo

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Power F-MOS FETs 2SK1834 Silicon N-Channel Power F-MOS s Features q Avalanche energy capability guaranteed : EAS > 15mJ q VGSS=±30V guaranteed q Hig

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1830 High Speed Switching Applications Analog Switch Applications • 2.5 V gate drive •

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Ordering number:EN4634 N-Channel Enhancement Silicon MOSFET 2SK1839 Analog Switch Applications Features · Ultrasmall-sized package permitting 2SK183

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Power F-MOS FETs 2SK1833 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 90mJ q VGSS = ±30V guaranteed q Hi

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