2SK34 Datasheet | Specifications & PDF Download

2SK3446 Silicon N Channel Power MOS FET Power Switching REJ03G1100-0800 (Previous: ADE-208-1566F) Rev.8.00 Sep 07, 2005 Features • Capable of 2.5 V g

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OEM: Hitachi MOSFET Transistor 2SK343 / K343 Datasheet N-Channel MOSFET Transistor 2SK343 / K343 140V / 8A DATASHEET OEM – Hitachi Source: Hitac

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isc N-Channel MOSFET Transistor 2SK3431 FEATURES ·Drain Current : ID= 83A@ TC=25℃ ·Drain Source Voltage : VDSS= 40V(Min) ·Static Drain-Source On-Res

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3483 SWITCHING N-CHANNEL POWER MOS FET www.DataSheet4U.com DESCRIPTION The 2SK3483 is N-channel MOS Fiel

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2SK3475 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3475 VHF- and UHF-band Amplifier Applications Unit: mm Output power: PO = 630 m

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3408 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SK3408 is a switching device wh

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3479 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3479 is N-channel MOS Field Effect Transistor d

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isc N-Channel MOSFET Transistor 2SK3431-S FEATURES ·Drain Current : ID= 83A@ TC=25℃ ·Drain Source Voltage : VDSS= 40V(Min) ·Static Drain-Source On-R

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3455 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3455 is N-channel DMOS FET device that features

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2SK3476 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3476 VHF- and UHF-band Amplifier Applications Unit: mm Output power: PO = 7.0 W

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PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3435 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3435

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2SK3460 Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse) *1 PD EAS *2 I AS Tch Tstg Ratings 150 +20, –10 ± 18 ± 72 35 (Tc = 25ºC) 180 18 150 –5

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isc N-Channel MOSFET Transistor 2SK3435 FEATURES ·Drain Current : ID= 80A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Res

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isc N-Channel MOSFET Transistor 2SK3468 FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Re

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isc N-Channel MOSFET Transistor 2SK3430 FEATURES ·Drain Current : ID= 80A@ TC=25℃ ·Drain Source Voltage : VDSS= 40V(Min) ·Static Drain-Source On-Res

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3484 SWITCHING N-CHANNEL POWER MOS FET www.DataSheet4U.com DESCRIPTION The 2SK3484 is N-channel MOS Fiel

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isc N-Channel MOSFET Transistor 2SK3481 FEATURES ·Drain Current : ID= 30A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Re

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2SK3440 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3440 Switching Regulator, DC-DC Converter Applications Motor Drive Ap

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Silicon Junction FETs (Small Signal) 2SK3426 Silicon N-Channel Junction For impedance conversion in low frequency For electret capacitor microphone I

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