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3670 Hits
J W W °C
MAXIMUM 6 50
UNIT °C / W
p.1
EMB20N03V
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIO...
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3415 Hits
● VDS = -20V,ID = -2.6A RDS(ON) < 160mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V
D G
S Schematic diagram
● High power and current handing capability ...
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399 Hits
nuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this pr...
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274 Hits
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. op...
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247 Hits
The AOD452 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load...
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239 Hits
OL
TEST CONDITIONS
LIMITS MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage
V(BR)DSS VGS(th) IGSS
VGS =...
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236 Hits
Wide Input Range: 9V to 30V Current Mode Control 300mV Feedback Reference Short LED Protection Over Current Protection Over Temperature Pr...
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209 Hits
l Fast Switching l Low ON Resistance(Rdson≤3.5mΩ) l Low Gate Charge (Typical Data:75nC) l Low Reverse transfer capacitances(Typical:800pF) l 100% Sin...
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200 Hits
hermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 1.4 110 Units ℃/W ℃/W
Data & specifications subject to change wit...
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195 Hits
Low Power Loss by High Speed Switching and Low On-Resistance 100% Avalanche Tested Green Package – Pb Free Plating, Halogen Free
Applications...
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195 Hits
of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transist...
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