30-80 Datasheet | Specifications & PDF Download

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Texas Instruments

TI380C30A - Integrated Token-Ring CommProcessor And Physical Layer Interface

TI380C30A INTEGRATED TOKEN-RING COMMPROCESSOR AND PHYSICAL-LAYER INTERFACE SPWS034 – MARCH 1998 D Single-Chip Token-Ring Solution D IBM™ Token-Ring N.
Rating: 1 (11 votes)
Alpha & Omega Semiconductors

AON6380 - 30V N-Channel MOSFET

AON6380 30V N-Channel AlphaMOS General Description • Trench Power AlphaMOS (αMOS LV) technology • Low RDS(ON) • Low Gate Charge • High Current Capabi.
Rating: 1 (6 votes)
ETC

ZEN3309A - ADC-8051 10-bit microcontrollers

ZEN3305A/08A/09A 10ADC-8051 1.  80518  Flash ROM:4K/8K/16K  RAM:256,256  512EEPROM  : fOSC = 30kHz - 16.6MHz,VDD = 2.8V - 5.5V  (): - :32.768.
Rating: 1 (6 votes)
ChipSourceTek

AKT3080K - 30V N-channel enhancement mode MOSFET

AKT3080K 30V N-channel enhancement mode MOSFET AKT3080K Features AKT3080K General Description • Extremely Low RDS(on): Typ.RDS(on) = 4.0 mΩ @VGS=10.
Rating: 1 (6 votes)
FNK

FNK30H80 - N-Channel Power MOSFET

FNK30H80 FNK N-Channel Enhancement Mode Power MOSFET Description The FNK30H80 uses advanced trench technology and design to provide excellent RDS(ON).
Rating: 1 (5 votes)
NXP

P87C31X2 - 80C51 8-bit microcontroller family 4K/8K/16K/32K ROM/OTP 128B/256B RAM low voltage 2.7 to 5.5 V/ low power/ high speed 30/33 MHz

INTEGRATED CIRCUITS 80C31X2/32X2 80C51X2/52X2/54X2/58X2 87C51X2/52X2/54X2/58X2 80C51 8-bit microcontroller family 4K/8K/16K/32K ROM/OTP 128B/256B RAM.
Rating: 1 (5 votes)
Aeroflex

LM200802-M-A-300 - Surface Mount Pin Diode Limiter

LM200802-M-A-300 Surface Mount Pin Diode Limiter, 20 MHz – 8 GHz Datasheet Features • Broadband Performance: 20 MHz – 8 GHz • Surface Mount Limiter in.
Rating: 1 (5 votes)
Fairchild Semiconductor

FDD6680S - 30V N-Channel PowerTrench SyncFET

FDD6680S December 2000 FDD6680S 30V N-Channel PowerTrench SyncFET™ General Description The FDD6680S is designed to replace a single MOSFET and Scho.
Rating: 1 (5 votes)
Rectron

80N30 - N-Channel Enhancement Mode Power MOSFET

RM80N30LD N-Channel Enhancement Mode Power MOSFET Description The RM80N30LD uses advanced trench technology and design to provide excellent RDS(ON) w.
Rating: 1 (5 votes)
MCC

EGP30K - 3.0 Amp Glass Passivated High Efficient Rectifiers 50 to 800 Volts

MCC Features      omponents 21201 Itasca Street Chatsworth  # $ % # EGP30A THRU EGP30K 3.
Rating: 1 (5 votes)
Fairchild Semiconductor

FAN5308 - 800mA High-Efficiency Step-Down DC-DC Converter

FAN5308 — 800mA High-Efficiency Step-Down DC-DC Converter June 2007 FAN5308 tm 800mA High-Efficiency Step-Down DC-DC Converter Features ■ 96% effici.
Rating: 1 (5 votes)
EADA

20SQ080 - (20SQ030 - 20SQ100) SCHOTTKY BARRIER RECTIFIERS

20SQ030 thru 20SQ100 SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE - 30 to 100Volts FORWARD CURRENT - 15.0 Amperes R-6 FEATURES ●Metal of silicon recti.
Rating: 1 (5 votes)
TriQuint Semiconductor

TGP2104 - 30 - 40 GHz 180 Phase Shifter

TGP2104 30 - 40 GHz 180 Phase Shifter Key Features and Performance • Frequency Range: 30-40 GHz • 3.5 dB Nominal Insertion Loss • 10 deg Phase Error @.
Rating: 1 (5 votes)
Sino-IC

SE3080A - N-Channel MOSFET

SE3080A/K N-Channel Enhancement-Mode MOSFET Revision: A General Description Advanced trench technology to provide excellent RDS(ON), low gate charge.
Rating: 1 (5 votes)
FNK

30H80 - N-Channel Enhancement Mode MOSFET

30H80/30H80A N-Channel Enhancement Mode MOSFET Features • 30H80 (TO-220) / 30H80A (TO-262) • 30V/80A, RDS(ON)=7.5mΩ ( ) @ VGS=10V RDS(ON)=10 mΩ ( ) .
Rating: 1 (5 votes)
APM

AP80N03D - 30V N-Channel Enhancement Mode MOSFET

Description AP80N03D 30V N-Channel Enhancement Mode MOSFET The AP80N03D uses advanced trench technology to provide excellent RDS(ON), low gate charg.
Rating: 1 (5 votes)
Renesas

ISL21080 - 300nA NanoPower Voltage References

DATASHEET ISL21080 300nA NanoPower Voltage References The ISL21080 analog voltage references feature low supply voltage operation at ultra-low 310nA .
Rating: 1 (4 votes)
natlinear

LN80N03 - 80A/30V withstand voltage N-channel enhanced FET

80A/30V N ■ VDSS 30V ID 80A ■     TO-252 ■  TO-252 LN80N03 RDS(ON)(mΩ)TYP 5.5 @ VGS=10V, ID=25A ■ LN80N03 -55°C to +150°C .
Rating: 1 (4 votes)
Alpha & Omega Semiconductors

AON7380 - 30V N-Channel MOSFET

AON7380 30V N-Channel AlphaMOS General Description • Trench Power AlphaMOS (αMOS LV) technology • Low RDS(ON) • Low Gate Charge • High Current Capabi.
Rating: 1 (4 votes)
MA-COM

LM200802-M-A-300 - PIN Diode Limiter

LM200802-M-A-300 PIN Diode Limiter 20 MHz - 8 GHz Features  Surface Mount Limiter in 8 mm x 5 mm x 2.5 mm Package  Incorporates NIP & PIN Limiter Di.
Rating: 1 (4 votes)
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