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TI380C30A - Integrated Token-Ring CommProcessor And Physical Layer Interface
TI380C30A INTEGRATED TOKEN-RING COMMPROCESSOR AND PHYSICAL-LAYER INTERFACE SPWS034 – MARCH 1998 D Single-Chip Token-Ring Solution D IBM™ Token-Ring N.AON6380 - 30V N-Channel MOSFET
AON6380 30V N-Channel AlphaMOS General Description • Trench Power AlphaMOS (αMOS LV) technology • Low RDS(ON) • Low Gate Charge • High Current Capabi.ZEN3309A - ADC-8051 10-bit microcontrollers
ZEN3305A/08A/09A 10ADC-8051 1. 80518 Flash ROM:4K/8K/16K RAM:256,256 512EEPROM : fOSC = 30kHz - 16.6MHz,VDD = 2.8V - 5.5V (): - :32.768.AKT3080K - 30V N-channel enhancement mode MOSFET
AKT3080K 30V N-channel enhancement mode MOSFET AKT3080K Features AKT3080K General Description • Extremely Low RDS(on): Typ.RDS(on) = 4.0 mΩ @VGS=10.FNK30H80 - N-Channel Power MOSFET
FNK30H80 FNK N-Channel Enhancement Mode Power MOSFET Description The FNK30H80 uses advanced trench technology and design to provide excellent RDS(ON).P87C31X2 - 80C51 8-bit microcontroller family 4K/8K/16K/32K ROM/OTP 128B/256B RAM low voltage 2.7 to 5.5 V/ low power/ high speed 30/33 MHz
INTEGRATED CIRCUITS 80C31X2/32X2 80C51X2/52X2/54X2/58X2 87C51X2/52X2/54X2/58X2 80C51 8-bit microcontroller family 4K/8K/16K/32K ROM/OTP 128B/256B RAM.LM200802-M-A-300 - Surface Mount Pin Diode Limiter
LM200802-M-A-300 Surface Mount Pin Diode Limiter, 20 MHz – 8 GHz Datasheet Features • Broadband Performance: 20 MHz – 8 GHz • Surface Mount Limiter in.FDD6680S - 30V N-Channel PowerTrench SyncFET
FDD6680S December 2000 FDD6680S 30V N-Channel PowerTrench SyncFET™ General Description The FDD6680S is designed to replace a single MOSFET and Scho.80N30 - N-Channel Enhancement Mode Power MOSFET
RM80N30LD N-Channel Enhancement Mode Power MOSFET Description The RM80N30LD uses advanced trench technology and design to provide excellent RDS(ON) w.EGP30K - 3.0 Amp Glass Passivated High Efficient Rectifiers 50 to 800 Volts
MCC Features omponents 21201 Itasca Street Chatsworth # $ % # EGP30A THRU EGP30K 3.FAN5308 - 800mA High-Efficiency Step-Down DC-DC Converter
FAN5308 — 800mA High-Efficiency Step-Down DC-DC Converter June 2007 FAN5308 tm 800mA High-Efficiency Step-Down DC-DC Converter Features ■ 96% effici.20SQ080 - (20SQ030 - 20SQ100) SCHOTTKY BARRIER RECTIFIERS
20SQ030 thru 20SQ100 SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE - 30 to 100Volts FORWARD CURRENT - 15.0 Amperes R-6 FEATURES ●Metal of silicon recti.TGP2104 - 30 - 40 GHz 180 Phase Shifter
TGP2104 30 - 40 GHz 180 Phase Shifter Key Features and Performance • Frequency Range: 30-40 GHz • 3.5 dB Nominal Insertion Loss • 10 deg Phase Error @.SE3080A - N-Channel MOSFET
SE3080A/K N-Channel Enhancement-Mode MOSFET Revision: A General Description Advanced trench technology to provide excellent RDS(ON), low gate charge.30H80 - N-Channel Enhancement Mode MOSFET
30H80/30H80A N-Channel Enhancement Mode MOSFET Features • 30H80 (TO-220) / 30H80A (TO-262) • 30V/80A, RDS(ON)=7.5mΩ ( ) @ VGS=10V RDS(ON)=10 mΩ ( ) .AP80N03D - 30V N-Channel Enhancement Mode MOSFET
Description AP80N03D 30V N-Channel Enhancement Mode MOSFET The AP80N03D uses advanced trench technology to provide excellent RDS(ON), low gate charg.ISL21080 - 300nA NanoPower Voltage References
DATASHEET ISL21080 300nA NanoPower Voltage References The ISL21080 analog voltage references feature low supply voltage operation at ultra-low 310nA .LN80N03 - 80A/30V withstand voltage N-channel enhanced FET
80A/30V N ■ VDSS 30V ID 80A ■ TO-252 ■ TO-252 LN80N03 RDS(ON)(mΩ)TYP 5.5 @ VGS=10V, ID=25A ■ LN80N03 -55°C to +150°C .AON7380 - 30V N-Channel MOSFET
AON7380 30V N-Channel AlphaMOS General Description • Trench Power AlphaMOS (αMOS LV) technology • Low RDS(ON) • Low Gate Charge • High Current Capabi.LM200802-M-A-300 - PIN Diode Limiter
LM200802-M-A-300 PIN Diode Limiter 20 MHz - 8 GHz Features Surface Mount Limiter in 8 mm x 5 mm x 2.5 mm Package Incorporates NIP & PIN Limiter Di.