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Product Folder Sample & Buy Technical Documents Tools & Software Support & Community TS3USB30E SCDS255F – DECEMBER 2008 – REVISED AUGUST 2015 TS3

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TPL8032 Series 20-V/300-mA Wide-Input High-PSRR Ultra-Low Noise LDO Regulator Features • Input Voltage Range: 2.5 V to 20 V • Output Voltage Range: –

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Description AP80N03D 30V N-Channel Enhancement Mode MOSFET The AP80N03D uses advanced trench technology to provide excellent RDS(ON), low gate charg

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AON6380 30V N-Channel AlphaMOS General Description • Trench Power AlphaMOS (αMOS LV) technology • Low RDS(ON) • Low Gate Charge • High Current Capabi

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AO4801A 30V P-Channel MOSFET General Description Product Summary The AO4801A combines advanced trench MOSFET technology with a low resistance packa

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AON7380 30V N-Channel AlphaMOS General Description • Trench Power AlphaMOS (αMOS LV) technology • Low RDS(ON) • Low Gate Charge • High Current Capabi

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CMP3803/CMB3803/CMI3803 General Description The 3803 is N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge fo

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RM80N30LD N-Channel Enhancement Mode Power MOSFET Description The RM80N30LD uses advanced trench technology and design to provide excellent RDS(ON) w

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PAN3080L 30V N-channel enhancement mode MOSFET General Description The PAN3080L is a 30V N-channel enhancement mode MOSFET which uses advanced trench

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Pb Free Product http://www.ncepower.com NCE3080K NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE3080K uses advanced trench technolo

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SE3080A/K N-Channel Enhancement-Mode MOSFET Revision: A General Description Advanced trench technology to provide excellent RDS(ON), low gate charge

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ZEN3305A/08A/09A 10ADC-8051 1.  80518  Flash ROM：4K/8K/16K  RAM：256，256  512EEPROM  ： fOSC = 30kHz - 16.6MHz，VDD = 2.8V - 5.5V  （）： - ：32.768

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SLD80N03T SLD80N03T 30V N -Channel MOSFET General Description This Power MOSFET is produced using Msemitek‘s advanced TRENCH technology. This advance

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D30XB80 Bridge Diodes 800V, 30A Feature ・Compact SIP ・UL E142422 ・High Current ・High heat dissipation ・Pb free terminal ・RoHS:Yes OUTLINE Package (Ho

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FM3080SC Description FM3080SC N-Channel Trench Power MOSFET Features Application  30V,65A  Load Switch  RDS(ON)=5.4mΩ (Typ.) @ VGS =10V 

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TI380C30A INTEGRATED TOKEN-RING COMMPROCESSOR AND PHYSICAL-LAYER INTERFACE SPWS034 – MARCH 1998 D Single-Chip Token-Ring Solution D IBM™ Token-Ring N

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SCAN921025/SCAN921226 30-80 MHz 10 Bit BLVDS Serializer and Deserializer with IEEE 1149.1 (JTAG) and at-speed BIST SCAN921025 and SCAN921226 OBSOLET

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30H80/30H80A N-Channel Enhancement Mode MOSFET Features • 30H80 (TO-220) / 30H80A (TO-262) • 30V/80A, RDS(ON)=7.5mΩ ( ) @ VGS=10V RDS(ON)=10 mΩ ( )

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NRND SCAN921025, SCAN921226 www.ti.com SNLS148C – DECEMBER 2001 – REVISED APRIL 2013 SCAN921025 and SCAN921226 30-80 MHz 10 Bit Bus LVDS Serialize

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