UNISONIC TECHNOLOGIES CO., LTD 30N20 30A, 200V N-C.
30N20 - 200V N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD 30N20 30A, 200V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 30N20 is an N-channel mode Power FET, it uses UTC’s advanc.MMIX1F230N20T - Power MOSFET
Preliminary Technical Information GigaMOSTM TrenchTM HiperFETTM Power MOSFET (Electrically Isolated Tab) MMIX1F230N20T N-Channel Enhancement Mode A.CS30N20FA9R - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET ○R CS30N20F A9R General Description: CS30N20F A9R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the se.CS30N20A8R - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET ○R CS30N20 A8R General Description: CS30N20 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self.NTP30N20 - Power MOSFET
NTP30N20 Preferred Device Power MOSFET 30 Amps, 200 Volts N−Channel Enhancement−Mode TO−220 Features • Source−to−Drain Diode Recovery Time Comparable.30N20G - Power MOSFET
NTP30N20 Preferred Device Power MOSFET 30 Amps, 200 Volts N−Channel Enhancement−Mode TO−220 Features • Source−to−Drain Diode Recovery Time Comparable.MTE130N20J3 - N-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp. Spec. No. : C966J3 Issued Date : 2014.12.23 Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTE130N2.FTP30N20R - N-Channel MOSFET
N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS Features: ● RoHS Compliant ● Low ON Resistance ● Low Gate Charge ● Peak Current vs Pulse Wi.IXTQ130N20T - Power MOSFET
TrenchTM Power MOSFET IXTQ130N20T IXTH130N20T N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Symbol VDSS VDGR VGSS VGSM ID25 I.MTE130N20F3 - N-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTE130N20F3 Spec. No. : C966F3 Issued Date : 2016.12.19 Revised Date : Page No. : 1.NTB30N20 - Power MOSFET
www.DataSheet4U.com NTB30N20 Power MOSFET 30 Amps, 200 Volts N−Channel Enhancement−Mode D2PAK Features • Source−to−Drain Diode Recovery Time Compara.AM30N20-400PCFM - MOSFET
Analog Power AM30N20-400PCFM N-Channel 200-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching spe.IXTH130N20T - Power MOSFET
TrenchTM Power MOSFET IXTQ130N20T IXTH130N20T N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Symbol VDSS VDGR VGSS VGSM ID25 I.IXFX230N20T - GigaMOS Power MOSFET
Advance Technical Information www.DataSheet4U.com GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK230N20.IXFN230N20T - GigaMOS Power MOSFET
Advance Technical Information www.DataSheet4U.com GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN230N20.MTE130N20H8 - N-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp. Spec. No. : C966H8 Issued Date : 2015.03.23 Revised Date : Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFET MTE130N.IXTH130N20T - N-Channel MOSFET
isc N-Channel MOSFET Transistor IXTH130N20T ·FEATURES ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 16mΩ(M.IXTQ130N20T - N-ChannelMOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 16mΩ(Max) ·Fast Swi.NTP30N20G - Power MOSFET
NTP30N20 Preferred Device Power MOSFET 30 Amps, 200 Volts N−Channel Enhancement−Mode TO−220 Features • Source−to−Drain Diode Recovery Time Comparable.HR1330N200B - LCD
Version: 0.1 2012-11-15 HR1330N200B SPECIFICATION Revision:0.1 HR1330N200B This module uses ROHS material CUSTOMER: Approved by: HONGRUI TECHNOLOGY .