K4S281632B (Samsung semiconductor)
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S281632B
CMOS SDRAM
128Mbit SDRAM
2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
Revision 0.0 Aug. 1999
* Samsung Electronics reserves the right to
(18 views)
K4S281632C-TP75 (Samsung semiconductor)
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S281632C-TI(P)
CMOS SDRAM
128Mbit SDRAM
2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
Revision 0.1 June 2001
* Samsung Electronics reserves the ri
(15 views)
HY29LV320BF-12I (Hynix Semiconductor)
32 Mbit (2M x 16) Low Voltage Flash Memory
HY29LV320
32 Mbit (2M x 16) Low Voltage Flash Memory
KEY FEATURES
n Single Power Supply Operation
– Read, program and erase operations from 2.7 to 3.
(14 views)
K4S281632D (Samsung semiconductor)
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S281632D
CMOS SDRAM
128Mbit SDRAM
2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
Rev. 0.1 Sept. 2001
* Samsung Electronics reserves the right to ch
(12 views)
K4S281632D-NC1H (Samsung semiconductor)
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S281632D
CMOS SDRAM
128Mbit SDRAM
2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
Rev. 0.1 Sept. 2001
* Samsung Electronics reserves the right to ch
(11 views)
K4S281632M (Samsung semiconductor)
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S281632M
CMOS SDRAM
128Mbit SDRAM
2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
Revision 0.0 Aug. 1999
Samsung Electronics reserves the right to c
(11 views)
V54C3256164VBUC (Mosel Vitelic Corp)
LOW POWER 256Mbit SDRAM
MOSEL VITELIC
V54C3256164VBUC/T LOW POWER 256Mbit SDRAM 3.3 VOLT, 54-BALL SOC BGA 54-PIN TSOPII 16M X 16
PRELIMINARY
6 System Frequency (fCK) Clock
(11 views)
K4J55323QF-GC (Samsung)
256Mbit GDDR3 SDRAM
K4J55323QF-GC
256M GDDR3 SDRAM
256Mbit GDDR3 SDRAM
2M x 32Bit x 4 Banks Graphic Double Data Rate 3 Synchronous DRAM with Uni-directional Data Strobe
(11 views)
LC324256 (Sanyo Electric)
1-Mbit CMOS RAM
(11 views)
HY29LV320BF-70 (Hynix Semiconductor)
32 Mbit (2M x 16) Low Voltage Flash Memory
HY29LV320
32 Mbit (2M x 16) Low Voltage Flash Memory
KEY FEATURES
n Single Power Supply Operation
– Read, program and erase operations from 2.7 to 3.
(10 views)
K4S281632B-TL10 (Samsung semiconductor)
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S281632B
CMOS SDRAM
128Mbit SDRAM
2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
Revision 0.0 Aug. 1999
* Samsung Electronics reserves the right to
(10 views)
K4S281632C (Samsung semiconductor)
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S281632C-TI(P)
CMOS SDRAM
128Mbit SDRAM
2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
Revision 0.1 June 2001
* Samsung Electronics reserves the ri
(10 views)
K4S281632D-L55 (Samsung semiconductor)
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S281632D
CMOS SDRAM
128Mbit SDRAM
2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
Rev. 0.1 Sept. 2001
* Samsung Electronics reserves the right to ch
(10 views)
V54C3256804VB (Mosel Vitelic Corp)
256Mbit SDRAM
MOSEL VITELIC
V54C3256(16/80/40)4V(T/S/B) 256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4
PRELIMINARY
6 System
(10 views)
CY7C1378C (Cypress Semiconductor)
9-Mbit (256K x 32) Pipelined SRAM
CY7C1378C
9-Mbit (256K x 32) Pipelined SRAM with NoBL™ Architecture
Features
• Pin-compatible and functionally equivalent to ZBT® devices • Internall
(10 views)
Pm25LQ032C (Chingis Technology)
32Mbit Single Operating Voltage Serial Flash Memory
Pm25LQ032C
FEATURES
• Single Power Supply Operation - Low voltage range: 2.7 V - 3.6 V
• Memory Organization - Pm25LQ032C: 4096K x 8 (32 Mbit)
• Cost
(10 views)
HY29LV320BF-12 (Hynix Semiconductor)
32 Mbit (2M x 16) Low Voltage Flash Memory
HY29LV320
32 Mbit (2M x 16) Low Voltage Flash Memory
KEY FEATURES
n Single Power Supply Operation
– Read, program and erase operations from 2.7 to 3.
(9 views)
HY29LV320BF-80 (Hynix Semiconductor)
32 Mbit (2M x 16) Low Voltage Flash Memory
HY29LV320
32 Mbit (2M x 16) Low Voltage Flash Memory
KEY FEATURES
n Single Power Supply Operation
– Read, program and erase operations from 2.7 to 3.
(9 views)
HY29LV320BF-90 (Hynix Semiconductor)
32 Mbit (2M x 16) Low Voltage Flash Memory
HY29LV320
32 Mbit (2M x 16) Low Voltage Flash Memory
KEY FEATURES
n Single Power Supply Operation
– Read, program and erase operations from 2.7 to 3.
(9 views)
V54C3256 (Mosel Vitelic Corp)
256Mbit SDRAM
MOSEL VITELIC
V54C3256(16/80/40)4V(T/S/B) 256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4
PRELIMINARY
6 System
(9 views)
