32-Mbit Datasheet | Specifications & PDF Download

www.DataSheet4U.com M28W320FST, M28W320FSB, M28W640FSB, M28W640FST 32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Boot Block, Secure Flash Memories

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512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O Specification of 512M (16Mx32bit) Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,19

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M27C322 32 Mbit (2Mb x16) UV EPROM and OTP EPROM s 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 80ns WORD-WIDE CONFIGURABLE 32 Mbit MASK RO

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M28W320CT M28W320CB 32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 2.7V to 3.6V Core Power Supply – V

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M27V320 32 Mbit (4Mb x8 or 2Mb x16) OTP EPROM s 3.3V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 100ns BYTE-WIDE or WORD-WIDE CONFIGURABLE 32

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K4S640832D CMOS SDRAM 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 June 1999 * Samsung Electronics reserves the right to c

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Am41PDS3224D Data Sheet -XO\  7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG )

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IC42S32200 IC42S32200L Document Title 512K x 32 Bit x 4 Banks (64-MBIT) SDRAM Revision History www.datasheet4u.com Revision No History Initial Draf

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www.DataSheet4U.com 128MBit MOBILE SDR SDRAMs based on 1M x 4Bank x32 I/O Specification of 128M (4Mx32bit) Mobile SDRAM Memory Cell Array - Organiz

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www.DataSheet4U.com 128MBit MOBILE SDR SDRAMs based on 1M x 4Bank x32 I/O Specification of 128M (4Mx32bit) Mobile SDRAM Memory Cell Array - Organiz

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Data Sheet, Rev. 1.03, Dec. 2005 www.DataSheet4U.com HYB18H256321AF–12/14/16 HYB18H256321AFL14/16/20 256-Mbit x32 GDDR3 DRAM RoHS compliant Memory

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N551C321 Table of Contents- 1. GENERAL DESCRIPTION

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TRSF3232E SLLS825B – AUGUST 2007 – REVISED JUNE 2021 TRSF3232E 3-V TO 5.5-V Two-Channel RS-232 1-Mbit/s Line Driver and Reciever with ±15-kV IEC ESD P

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M27C320 32 Mbit (4Mb x8 or 2Mb x16) OTP EPROM PRELIMINARY DATA s 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 80ns BYTE-WIDE or WORD-W

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M28W320ECT M28W320ECB 32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 2.7V to 3.6V Core Power Supply –

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M27V322 32 Mbit (2Mb x16) Low Voltage UV EPROM and OTP EPROM s 3.3V ± 10% SUPPLY VOLTAGE in READ OPERATION READ ACCESS TIME – 100ns at VCC = 3.0V to

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IS42S32200 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals r

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HY29LV320 32 Mbit (2M x 16) Low Voltage Flash Memory KEY FEATURES n Single Power Supply Operation – Read, program and erase operations from 2.7 to 3.

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K4S281632C CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Mar. 2000 * Samsung Electronics reserves the right to

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K4S281632D CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.1 Sept. 2001 * Samsung Electronics reserves the right to ch

Rating: 1 ★ (4 votes)