32-Mbit Datasheet | Specifications & PDF Download

Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC) 32, 64, and 128 Mbit Datasheet Product Features „ Architecture — Symmetrical 128-

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FEATURES: 32 Mbit SPI Serial Flash PCT25VF032B SST25VF032B32Mb Serial Peripheral Interface (SPI) flash memory Data Sheet • Single Voltage Read and

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HY5RS123235BFP 512Mbit (16Mx32) GDDR3 SDRAM HY5RS123235BFP This document is a general product description and is subject to change without notice. Hy

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HY27US(08/16)561A Series HY27SS(08/16)561A Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Document Title 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash

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M36W432T M36W432B 32 Mbit (2Mb x16, Boot Block) Flash Memory and 4 Mbit (256K x16) SRAM, Multiple Memory Product PRODUCT PREVIEW FEATURES SUMMARY s S

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AT45DQ321 32-Mbit DataFlash (with Extra 1-Mbits), 2.3V Minimum SPI Serial Flash Memory with Dual-I/O and Quad-I/O Support Datasheet Features ▪ Singl

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M36W432T M36W432B 32 Mbit (2Mb x16, Boot Block) Flash Memory and 4 Mbit (256K x16) SRAM, Multiple Memory Product PRODUCT PREVIEW FEATURES SUMMARY s S

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M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit (512Kb x32, Boot Block, Burst) 3V Supply Flash Memories PE4FEATURES SUMMARY s SUPPLY VOLTAGE – V

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www.DataSheet4U.com MES1M32XXXXX High Speed 32 Mbit CMOS S-RAM Module 32Mbit, 1MX32, 5V CMOS S-RAM MODULE Features Module Access Times: 20, 35 & 45

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K4S560832B CMOS SDRAM 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 May. 2000 * Samsung Electronics reserves the right to

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LH28F320S3NS, Reliability Test Report

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K4S560832C CMOS SDRAM 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to

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K4S560832A CMOS SDRAM 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Sep. 1999 * Samsung Electronics reserves the right to

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K4S560832D CMOS SDRAM 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 1.1 May. 2003 * Samsung Electronics reserves the right to

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CY7C1062DV33 16 Mbit (512 K × 32) Static RAM Features ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ ICC = 175 mA at 10 ns ■ Low complementary metal

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K4S281632C-TI(P) CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 June 2001 * Samsung Electronics reserves the ri

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M58BF008 8 Mbit (256Kb x32, Burst) Flash Memory PRELIMINARY DATA s SUPPLY VOLTAGE – VDD = 5V Supply Voltage – VDDQ = 3.3V Input/Output Supply Voltage

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S25FL032P 32-Mbit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Multi I/O Bus Data Sheet S25FL032P Cover Sheet Notice to

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K4J52324QE 512M GDDR3 SDRAM 512Mbit GDDR3 SDRAM Revision 1.3 Feb 2008 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND

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