32-channel Datasheet | Specifications & PDF Download

ChipSourceTek LTK5328PBTL_28W  LTK5328 LTK5328 2 8W ， PBTL 、、AGC 、AB/D 、 、 EMI。PBTL ， ，。 ， ，， ，。 LTK5328 2 ALC ， ，。 AB/D ，AB FM 。 RF 。  L

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LTK5325 25.3WG   LTK5325 2 5.3W ，、、AB/D 。、 EMI， ，， ， ，。LTK5325  2.8V-5.5V  BOOST   （ALC）  D 、 EMI 2 ，  、 ，。  THD+N=10%，VB

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IRF3205 ® Pb Free Plating Product IRF3205 Pb N-Channel Trench Process Power MOSFET Transistor General Description The IRF3205 is N-channel MOS F

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AON6324 30V N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS an

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Analog Reinvented ES9039Q2M 32-bit High performance 2 Channel DAC Product Datasheet The ESS Sabre® ES9039Q2M is a high performance 32-bit, 2-channel

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF3205， IIRF3205 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.0mΩ ·Enhancement m

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MAX220–MAX249 +5V-Powered, Multichannel RS-232 Drivers/Receivers General Description The MAX220–MAX249 family of line drivers/receivers is intended

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HY3208P/M/B/PS/PM N-Channel Enhancement Mode MOSFET Features • 80V/120A R= DS(ON) 7.0 mΩ (typ.) @ V =10V GS • 100% avalanche tested • Relia

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 MT3203 1 &KDQQHO /RZ4JŠ 026)(7 9 $  PΩ   *HQHUDO'HVFULSWLRQ 7KLV1 &KDQQHO026)(7KDVEHHQGHVLJQHGVSHFLILFD

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HY3215P/M/B/PS/PM Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGS

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRLB4132 ·FEATURES ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·M

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MAX220–MAX249 +5V-Powered, Multichannel RS-232 Drivers/Receivers General Description The MAX220–MAX249 family of line drivers/receivers is intended

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MAX220–MAX249 +5V-Powered, Multichannel RS-232 Drivers/Receivers General Description The MAX220–MAX249 family of line drivers/receivers is intended

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APM2321 P-Channel Enhancement Mode MOSFET Features Pin Description • -20V/-0.9A , RDS(ON)=370mΩ(typ.) @ V =-4.5V GS RDS(ON)=560mΩ(typ.) @

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APM2321A P-Channel Enhancement Mode MOSFET Features Pin Description • -20V/-1.2A , RDS(ON)=370mΩ (typ.) @ VGS=-4.5V RDS(ON)=560mΩ (typ.) @ V

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® MOS-TECH Semiconductor Co.,LTD 07  N-Channel Power MOSFET 4V,  A, mΩ Features • RDS(on) = 3mΩ (Typ.)@ VGS = 10V, ID = 80A • Qg(tot) = 345nC

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AONR21321 30V P-Channel MOSFET General Description • Latest Advanced Trench Technology • Low RDS(ON) • High Current Capability • RoHS and Halogen-Fre

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Dual-Channel/Multi-Phase Controller for DrMOS NCP81232 The NCP81232, a dual−channel/multi−phase synchronous buck controller, provides power managemen

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFB3207， IIRFB3207 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.5mΩ ·Enhancement

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iscN-Channel MOSFET Transistor IRFR320 ·FEATURES ·Low drain-source on-resistance: RDS(ON) ≤1.8Ω @VGS=10V ·Enhancement mode: Vth = 2.0 to 4.0V (VDS =

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