35N10 Datasheet | Specifications & PDF Download

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 35N10 ·FEATURES ·Drain Current ID= 35A@ TC=25℃ ·Drain Source Voltag

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TSM35N10 100V N-Channel Power MOSFET TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) 100 RDS(on)(mΩ) 37 @ VGS =10V

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ME35N10/ME35N10-G N- Channel 100V (D-S) MOSFET GENERAL DESCRIPTION The ME35N10 is the N-Channel logic enhancement mode power field effect transistor

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ISC035N10NM5LF2 MOSFET OptiMOSTM 5 Linear FET 2, 100 V Features • Ideal for hot-swap, battery protection and e-fuse applications • Very low on-resist

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() CRST037N10N,CRSS035N10N SkyMOS1 N-MOSFET 100V, 3mΩ, 120A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS(on

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Green Product STU35N10 STD35N10 Ver 1.0 S a mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUM

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FDB035N10A — N-Channel PowerTrench® MOSFET FDB035N10A N-Channel PowerTrench® MOSFET 100 V, 214 A, 3.5 mΩ November 2013 Features • RDS(on) = 3.0 mΩ

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AGMH035N10C ● General Description The AGMH035N10C combines advanced trench MOSFET technology with a low resistance package to provide extremely low R

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OptiMOS™-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating t

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TSM35N10 100V N-Channel Power MOSFET TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) 100 RDS(on)(mΩ) 37 @ VGS =10V

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Silicon N-Channel Power MOSFET ○R CS35N10F A9 General Description： CS35N10F A9, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high d

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ME35N10/ME35N10-G N- Channel 100V (D-S) MOSFET GENERAL DESCRIPTION The ME35N10 is the N-Channel logic enhancement mode power field effect transistor

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Preliminary data SPI35N10 SPP35N10,SPB35N10 SIPMOS Power-Transistor Feature
N-Channel
Enhancement mode
175°C operating temperature
Avalanch

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Preliminary data SPI35N10 SPP35N10,SPB35N10 SIPMOS Power-Transistor Feature
N-Channel
Enhancement mode
175°C operating temperature
Avalanch

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Preliminary data SPD35N10 SIPMOS Power-Transistor Feature
N-Channel
Enhancement mode
175°C operating temperature
Avalanche rated
dv/dt ra

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www.DataSheet4U.com N-CHANNEL 100V - 0.007 Ω - 135A D²PAK/TO-220 LOW GATE CHARGE STripFET™ POWER MOSFET TYPE STB135N10 STP135N10 s s s s STB135N10 S

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Types 380L, 382L, 380LX & 382LX, 85 ЊC High-Capacitance Snap-In Types 380L/LX & 4-pin Mount 382LX (85 °C) The excellent value of Type 380L/LX capacito

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Type 381LX / 383LX 105 °C High Ripple, Snap-In Aluminum High Ripple, Long Life, 2, 4 and 5 pin styles available Specifications Temperature Range Rate

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ISC035N10NM5LF MOSFET OptiMOSTM 5 Linear FET, 100 V Features • Ideal for hot-swap, battery protection and e-fuse applications • Very low on-resistanc

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MOSFET – N-Channel, POWERTRENCH) 100 V, 214 A, 3.5 mW FDB035N10A Description This N−Channel MOSFET is produced using onsemi’s advance POWERTRENCH proc

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