35N10 Datasheet | Specifications & PDF Download

AGMH035N10A ● General Description The AGMH035N10A combines advanced trench MOSFET technology with a low resistance package to provide extremely low R

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IGBT with Diode IXSN 35N100U1 VCES IC25 VCE(sat) = 1000 V = 38 A = 3.5 V High Short Circuit SOA Capability 3 2 4 www.DataSheet4U.com 1 Symbol V

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OptiMOS®-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating t

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HYG035N10NS1P/B Feature  100V/180A RDS(ON)=3.2mΩ(typ.) @ VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green Devices Avail

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ISC035N10NM5LF MOSFET OptiMOSTM 5 Linear FET, 100 V Features • Ideal for hot-swap, battery protection and e-fuse applications • Very low on-resistanc

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HMS135N10K, HMS135N10G N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is uniquely opt

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() CRST037N10N,CRSS035N10N SkyMOS1 N-MOSFET 100V, 3mΩ, 120A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS(on

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ISC035N10NM5LF2 MOSFET OptiMOSTM 5 Linear FET 2, 100 V Features • Ideal for hot-swap, battery protection and e-fuse applications • Very low on-resist

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AGM035N10A ● General Description The AGM035N10A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS

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() CRST037N10N3,CRSS035N10N3 SkyMOS3 N-MOSFET 100V, 3mΩ, 160A Features • Uses CRM(CQ) advanced SkyMOS3 technology • Extremely low on-resistance RDS(

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AGM035N10C ● General Description The AGM035N10C combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS

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OptiMOS™-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating t

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BSC035N10NS5 MOSFET OptiMOSTM 5 Power-Transistor, 100 V Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Sup

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MOSFET – N-Channel, POWERTRENCH) 100 V, 214 A, 3.5 mW FDB035N10A Description This N−Channel MOSFET is produced using onsemi’s advance POWERTRENCH proc

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HMS135N10, HMS135N10D N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is uniquely opti

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Green Product STP35N10 Ver 1.1 S a mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DS

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Public IPB035N10NF2S Final datasheet MOSFET StrongIRFET™ 2 Power‑Transistor, 100 V Features • Optimized for a wide range of applications • N‑channel

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FDB035N10A — N-Channel PowerTrench® MOSFET FDB035N10A N-Channel PowerTrench® MOSFET 100 V, 214 A, 3.5 mΩ November 2013 Features • RDS(on) = 3.0 mΩ

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Silicon N-Channel Power MOSFET ○R CS35N10F A9 General Description： CS35N10F A9, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high d

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AGMH035N10C ● General Description The AGMH035N10C combines advanced trench MOSFET technology with a low resistance package to provide extremely low R

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