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IXSN35N100U1 IGBT

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Description

IGBT with Diode IXSN 35N100U1 VCES IC25 VCE(sat) = 1000 V = 38 A = 3.5 V High Short Circuit SOA Capability 3 2 4 www.DataSheet4U.com 1 Symbol V.

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Features

* International standard package miniBLOC (ISOTOP) compatible Isolation voltage 3000 V~ 2nd generation HDMOSTM process - for high short circuit SOA Low VCE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Fast Recovery Epitaxial Diode (FRED) - short trr and IRM Low col

Applications

* AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies q q q q q q q q Advantages Space savings Easy to mount with 2 screws High power density 93005C (7/94) IXYS reserves the right to change limits, test condi

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