IXSN35N100U1 Datasheet - IXYS Corporation

IXSN35N100U1 IGBT

IGBT with Diode IXSN 35N100U1 VCES IC25 VCE(sat) = 1000 V = 38 A = 3.5 V High Short Circuit SOA Capability 3 2 4 www.DataSheet4U.com 1 Symbol V CES Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150° C; RGE = 1 MΩ Continuous Transient T C = 25°C T C = 90°C T C = 25°C, 1 ms V GE = 15 V, TVJ = 125°C, RG = 22 Ω Clamped inductive load, L = 30 µ H V GE = 15 V, VCE = 0.6 V CES, TJ = 125°C RG = 22 Ω, non repetitive T C = 25°C 50/60 Hz IISOL ≤ 1 mA t = 1 min t=1s Maximum Ratings 1000.

IXSN35N100U1 Features

* International standard package miniBLOC (ISOTOP) compatible Isolation voltage 3000 V~ 2nd generation HDMOSTM process - for high short circuit SOA Low VCE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Fast Recovery Epitaxial Diode (FRED) - short trr and IRM Low col

IXSN35N100U1_IXYSCorporation.pdf