* International standard package miniBLOC (ISOTOP) compatible Isolation voltage 3000 V~ 2nd generation HDMOSTM process - for high short circuit SOA Low VCE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Fast Recovery Epitaxial Diode (FRED) - short trr and IRM Low col
IXSN35N100U1 Datasheet (98.09 KB)
IXSN35N100U1
IXYS Corporation
98.09 KB
Igbt.
IGBT with Diode
IXSN 35N100U1
VCES IC25 VCE(sat)
= 1000 V = 38 A = 3.5 V
High Short Circuit SOA Capability
3 2
4 www.DataSheet4U.com
1
Symbol V.
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