IXSN62N60U1 Datasheet - IXYS Corporation

IXSN62N60U1 IGBT

IGBT with Diode Short Circuit SOA Capability IXSN 62N60U1 VCES IC25 VCE(sat) 3 2 = 600 V = 90 A = 2.5 V 4 www.DataSheet4U.com 1 Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC VISOL TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 22 W Clamped inductive load, L = 30 mH VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 22 W, non repetitive TC = 25°C 50/60.

IXSN62N60U1 Features

* International standard package miniBLOC (ISOTOP) compatible

* Aluminium-nitride isolation - high power dissipation

* Isolation voltage 3000 V~

* Low VCE(sat) - for minimum on-state conduction losses

* Fast Recovery Epitaxial Diode - short trr and IRM

IXSN62N60U1 Datasheet (101.39 KB)

IXSN62N60U1 Datasheet Preview — Preview of IXSN62N60U1 PDF

Datasheet Details

Part number:

IXSN62N60U1

Manufacturer:

IXYS Corporation

File Size:

101.39 KB

Description:

Igbt.

📁 Related Datasheet

IXSN35N100U1 IGBT (IXYS Corporation)

IXSN35N120AU1 High Voltage 1 GBT with Diode (IXYS)

IXSN52N60AU1 IGBT (IXYS Corporation)

IXSN55N120A High Voltage IGBT (IXYS Corporation)

IXSN55N120AU1 High Voltage IGBT (IXYS Corporation)

IXSN80N60A High Current IGBT (IXYS Corporation)

IXSN80N60AU1 High Current IGBT (IXYS Corporation)

IXSN80N60BD1 High Current IGBT (IXYS Corporation)

TAGS

IXSN62N60U1 IGBT IXYS Corporation

IXSN62N60U1 Distributor