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IXSN80N60AU1 Datasheet - IXYS Corporation

IXSN80N60AU1 - High Current IGBT

IGBT with Diode Short Circuit SOA Capability IXSN 80N60AU1 VCES IC25 VCE(sat) = 600 V = 160 A = 3V C G E www.DataSheet4U.com E Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC VISOL TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 22 W Clamped inductive load, L = 30 mH VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 22 W, non repetitive TC = 25°C 50/6

IXSN80N60AU1 Features

* l International standard package miniBLOC l Aluminium-nitride isolation - high power dissipation l Isolation voltage 3000 V~ l UL registered E 153432 l Low VCE(sat) - for minimum on-state conduction losses l Fast Recovery Epitaxial Diode - short trr and IRM l Low collector-to-case capacitance (< 60

IXSN80N60AU1_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXSN80N60AU1

Manufacturer:

IXYS Corporation

File Size:

130.44 KB

Description:

High current igbt.

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IXSN80N60AU1 High Current IGBT IXYS Corporation