IXSN52N60AU1 Datasheet - IXYS Corporation

IXSN52N60AU1 - IGBT

IGBT with Diode Combi Pack Short Circuit SOA Capability IXSN 52N60AU1 VCES IC25 VCE(sat) 3 2 = 600 V = 80 A = 3V 4 www.DataSheet4U.com 1 Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC VISOL TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 22 W Clamped inductive load, L = 30 mH VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 22 W, non repetitive TC = 2.

IXSN52N60AU1 Features

* International standard package miniBLOC

* Aluminium-nitride isolation - high power dissipation

* Isolation voltage 3000 V~

* Low VCE(sat) - for minimum on-state conduction losses

* Fast Recovery Epitaxial Diode - short trr and IRM

* Low collector-to-

IXSN52N60AU1_IXYSCorporation.pdf