IXSN55N120AU1 Datasheet - IXYS Corporation

IXSN55N120AU1 - High Voltage IGBT

High Voltage IGBT with Diode Short Circuit SOA Capability IXSN 55N120AU1 VCES = 1200 V IC25 = 110 A VCE(sat) = 4V 3 2 Preliminary data 4 www.DataSheet4U.com Symbol 1 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 22 W Clamped inductive load, L = 30 mH VGE = 15 V, VCE = 0.6 VCES, TJ = 125°C RG = 22 W, non repetitive TC = 25°C 50/60 Hz IISOL £ 1 mA IGBT Diode t = 1 min t=1s Max.

IXSN55N120AU1 Features

* 4 3 500 175 2500 3000 -55 +150 150 -55 +150 W W V~ V~ °C °C °C Nm/lb.in. Nm/lb.in. Mounting torque Terminal connection torque (M4) 1.5/13 1.5/13

* International standard package miniBLOC (ISOTOP) compatible

* Aluminium-nitride isolation - high power dissipation

* Isola

IXSN55N120AU1_IXYSCorporation.pdf