IXSN55N120A Datasheet - IXYS Corporation

IXSN55N120A - High Voltage IGBT

High Voltage IGBT IXSN 55N120A VCES = 1200 V IC25 = 110 A 4V VCE(sat) = 3 Short Circuit SOA Capability 2 Preliminary Data www.DataSheet4U.com 4 Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC VISOL TJ TJM Tstg Md Weight Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 22 W Clamped inductive load, L = 30 mH VGE = 15 V, VCE = 0.6 VCES, TJ = 125°C RG = 22 W, non-repe.

IXSN55N120A Features

* International standard package miniBLOC Aluminium-nitride isolation - high power dissipation Isolation voltage 3000 V~ UL registered E 153432 Low VCE(sat) - for minimum on-state conduction losses Low collector-to-case capacitance (

IXSN55N120A_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXSN55N120A

Manufacturer:

IXYS Corporation

File Size:

103.70 KB

Description:

High voltage igbt.

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IXSN55N120A High Voltage IGBT IXYS Corporation