IXSN80N60BD1 Datasheet - IXYS Corporation

IXSN80N60BD1, High Current IGBT

IGBT with Diode Short Circuit SOA Capability IXSN 80N60BD1 VCES IC25 VCE(sat) tfi C G E = = = = 600 V 160 A 2.5 V 180 ns Preliminary Data Sheet E.

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IXSN80N60BD1_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXSN80N60BD1

Manufacturer:

IXYS Corporation

File Size:

627.37 KB

Description:

High Current IGBT

Features

* International standard package z Aluminium-nitride isolation - high power dissipation z Isolation voltage 3000 V~ z UL registered E 153432 z Low VCE(sat) - for minimum on-state conduction losses z Fast Recovery Epitaxial Diode - short trr and IRM z Low collector-to-case capacitance (< 60 pF) - reduc

Applications

* z AC motor speed control z DC servo and robot drives z DC choppers z Uninterruptible power supplies (UPS) z Switch-mode and resonant-mode power supplies Advantages z Space savings z Easy to mount with 2 screws z High power density = IC90, VGE = 15 V; Note 1 IXYS reserves the right to change limits

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