IXSN80N60BD1 Datasheet - IXYS Corporation

IXSN80N60BD1 High Current IGBT

IGBT with Diode Short Circuit SOA Capability IXSN 80N60BD1 VCES IC25 VCE(sat) tfi C G E = = = = 600 V 160 A 2.5 V 180 ns Preliminary Data Sheet E www.DataSheet4U.com Symbol Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C (Silicon chip capability) Lead current limit (RMS) TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 5 Ω Clamped inductive load VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 22 Ω, non repetitive TC = 25°C 50/60 Hz IISOL ≤ .

IXSN80N60BD1 Features

* International standard package z Aluminium-nitride isolation - high power dissipation z Isolation voltage 3000 V~ z UL registered E 153432 z Low VCE(sat) - for minimum on-state conduction losses z Fast Recovery Epitaxial Diode - short trr and IRM z Low collector-to-case capacitance (< 60 pF) - reduc

IXSN80N60BD1_IXYSCorporation.pdf