* International standard package z Aluminium-nitride isolation - high power dissipation z Isolation voltage 3000 V~ z UL registered E 153432 z Low VCE(sat) - for minimum on-state conduction losses z Fast Recovery Epitaxial Diode - short trr and IRM z Low collector-to-case capacitance (< 60 pF) - reduc
IXSN80N60BD1 Datasheet (627.37 KB)
IXSN80N60BD1
IXYS Corporation
627.37 KB
High current igbt.
IGBT with Diode
Short Circuit SOA Capability
IXSN 80N60BD1 VCES IC25 VCE(sat) tfi
C G E
= = = =
600 V 160 A 2.5 V 180 ns
Preliminary Data Sheet
E.
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