35n60 Datasheet

35N60C3 Infineon

CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Ultra low gate.

IXYS Corporation

IXDH35N60B - IGBT with optional Diode

Apr 5, 2005 · 4 Hits q q q q q q q q Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Symbol Conditions Mounting torque TO-220 TO-2...

IXYS Corporation

IXDH35N60BD1 - IGBT with optional Diode

Apr 5, 2005 · 4 Hits q q q q q q q q Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Symbol Conditions Mounting torque TO-220 TO-2...

Infineon

35N60C3 - SPW35N60C3

May 24, 2016 · 4 Hits • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv /dt rated • Ultra low effective capacitanc...

INCHANGE

SPW35N60C3 - N-Channel MOSFET

Oct 14, 2020 · 3 Hits ·Static drain-source on-resistance: RDS(on)≤100mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performan...

IXYS Corporation

IXDP35N60B - IGBT with optional Diode

Apr 5, 2005 · 2 Hits q q q q q q q q Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Symbol Conditions Mounting torque TO-220 TO-2...

Infineon Technologies

SPW35N60C3 - Cool MOS Power Transistor

Sep 21, 2005 · 2 Hits • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv /dt rated • Ultra low effective capacitanc...

Infineon Technologies AG

SPW35N60CFD - CoolMOS Power Transistor

Sep 29, 2010 · 2 Hits TM Power Transistor Product Summary V DS R DS(on),max ID 600 V • New revolutionary high voltage technology • Intrinsic fast-recovery body diode • ...

Icemos

ICE35N60W - N-Channel Enhancement Mode MOSFET

Oct 8, 2013 · 2 Hits • TO247 package • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak curren...

IXYS

IXDR35N60BD1 - IGBT

Oct 31, 2015 · 2 Hits ● NPT IGBT technology ● low switching losses ● low tail current ● no latch up ● short circuit capability ● positive temperature coefficient for easy p...

STMicroelectronics

STW35N60DM2 - N-channel Power MOSFET

Mar 27, 2016 · 2 Hits Order code VDS STW35N60DM2 600 V RDS(on) max. 0.110 Ω ID PTOT 28 A 210 W  Fast-recovery body diode  Extremely low gate charge and input capaci...

Micross Components

ICE35N60W - N-Channel MOSFET

Sep 24, 2016 · 2 Hits r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability I...

INCHANGE

FMH35N60S1FD - N-Channel MOSFET

Oct 5, 2020 · 2 Hits ·With TO-3PN packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust ...

INCHANGE

SPW35N60CFD - N-Channel MOSFET

Oct 14, 2020 · 2 Hits ·Static drain-source on-resistance: RDS(on)≤118mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performan...

INCHANGE

IXKH35N60C5 - N-Channel MOSFET

Nov 2, 2020 · 2 Hits ·Static drain-source on-resistance: RDS(on) ≤ 100mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-...

Vishay

SIHF35N60E - MOSFET

Apr 5, 2017 · 1 Hits • A specific on resistance (m-cm2) reduction of 25 % • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and cond...

Vishay

SIHG35N60E - MOSFET

Apr 5, 2017 · 1 Hits • A specific on resistance (m-cm2) reduction of 25 % • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and cond...

Vishay

SiHB35N60E - Power MOSFET

Jan 8, 2017 · 1 Hits • A specific on resistance (m-cm2) reduction of 25 % • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and cond...

Fairchild Semiconductor

FCA35N60 - 600V N-Channel MOSFET

Oct 14, 2009 · 1 Hits • 650V @ TJ = 150°C • Typ.RDS(on) = 0.079Ω • Ultra low gate charge ( Typ. Qg = 139nC ) • Low effective output capacitance ( Typ. Coss.eff = 340pF ) • ...

Fairchild Semiconductor

FCH35N60 - N-Channel MOSFET

Apr 22, 2014 · 1 Hits • 650 V @ TJ = 150°C • Typ.RDS(on) = 79 mΩ • Ultra Low Gate Charge ( Typ. Qg = 139 nC ) • Low Effective Output Capacitance (Typ. Coss.eff = 340 pF) • ...

Fuji Electric

FGW35N60HD - Discrete IGBT

Feb 22, 2015 · 1 Hits Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply Power cod...